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MMBT2222ALP4-7B

Diodes Incorporated

MMBT2222ALP4-7B by Diodes Incorporated

Diodes Inc.'s MMBT2222ALP4-7B is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp. Package: PLASTIC/EPOXY CHIP CARRIER with NO LEAD terminals.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 6,345 parts In-Stock

1+ parts

$0.268

100+ parts

$0.101

1k+ parts

$0.058

10k+ parts

-

6,345

$0.268

$0.101

$0.058

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Mouser Electronics

USA . 18,775 parts In-Stock

1+ parts

$0.310

100+ parts

$0.119

1k+ parts

$0.070

10k+ parts

$0.060

18,775

$0.310

$0.119

$0.070

$0.060

Verical

USA . 650,000 parts In-Stock

1+ parts

-

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$0.030

650,000

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$0.030

DigiKey

USA . 197,475 parts In-Stock

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$0.054

197,475

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$0.054

Arrow

USA . 10,000 parts In-Stock

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$0.030

10,000

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$0.030

Farnell

UK . 7,713 parts In-Stock

1+ parts

-

100+ parts

$0.083

1k+ parts

$0.048

10k+ parts

$0.042

7,713

-

$0.083

$0.048

$0.042

Element14

Singapore . 7,713 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.082

10k+ parts

$0.072

7,713

-

-

$0.082

$0.072

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.065

100+ parts

-

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150

$0.065

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Vyrian

USA . 216,671 parts In-Stock

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216,671

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Chip Stock

USA . 102,500 parts In-Stock

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NexGen Digital

USA . 25,672 parts In-Stock

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25,672

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Bristol Electronics

USA . 7,125 parts In-Stock

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Atlantic Semiconductor

USA . 7,125 parts In-Stock

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Prism Electronics

USA . 67 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 214,951 parts In-Stock

1+ parts

$0.021

100+ parts

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214,951

$0.021

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Semicontronic

India . 214,916 parts In-Stock

1+ parts

$0.021

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$0.020

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$0.020

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214,916

$0.021

$0.020

$0.020

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Argo Parts USA

USA . 1,317 parts In-Stock

1+ parts

$0.061

100+ parts

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$0.059

1,317

$0.061

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$0.059

Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

$0.065

100+ parts

$0.062

1k+ parts

$0.059

10k+ parts

$0.058

1,000

$0.065

$0.062

$0.059

$0.058

Aztec Data Supply Inc.

USA . 3,574 parts In-Stock

1+ parts

$0.480

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3,574

$0.480

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.853

100+ parts

$0.776

1k+ parts

$0.699

10k+ parts

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10

$0.853

$0.776

$0.699

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Corohmni

South Africa . 983 parts In-Stock

1+ parts

$1.211

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983

$1.211

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Perfect Parts

USA . 240,159 parts In-Stock

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Metaverse IC Inc.

Canada . 210,000 parts In-Stock

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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Lixinc

USA . 13,209 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,551 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,010 parts In-Stock

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$0.078

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$0.047

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$0.029

3,010

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$0.078

$0.047

$0.029

Robosynatics

Brazil . 1,430 parts In-Stock

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Lucentia Tech

USA . 1,430 parts In-Stock

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$0.370

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$0.370

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$0.370

1,430

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$0.370

$0.370

$0.370

Overview

Unlock endless possibilities with the MMBT2222ALP4-7B by Diodes Incorporated, a top-tier manufacturer known for premium quality components. This NPN small signal bipolar junction transistor offers reliable performance in a range of applications, from amplification to switching circuits. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 40, this transistor provides exceptional value and efficiency. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the MMBT2222ALP4-7B today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and reliability of the transistor in various operating conditions.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN components in electronic circuits, enhancing versatility and compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easy to use in applications that require a single transistor.

Surface Mount: YES

Being surface mountable makes it easier to mount and solder the transistor onto a PCB, saving space and allowing for automated assembly.

Maximum Power Dissipation (Abs): 0.46 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating, ensuring stable performance.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the need for physical leads, reducing parasitic effects and improving high frequency performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance enables the transistor to operate reliably in various demanding environments.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows for the transistor to be used in a wide range of applications requiring higher voltage levels.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency indicates the transistor's capability to operate at high frequencies, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222ALP4-7B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222ALP4-7B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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