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NZT6717

Onsemi

NZT6717 by Onsemi

NZT6717 by Onsemi is a NPN BJT transistor with 1W power dissipation, hFE of 50, and 80V collector-emitter voltage. It is used for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150 °C, it offers a max collector current of 1.2A and matte tin terminal finish.

Median Price

$0.152

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 209 parts In-Stock

1+ parts

$0.148

100+ parts

$0.139

1k+ parts

$0.126

10k+ parts

$0.126

209

$0.148

$0.139

$0.126

$0.126

Farnell

UK . 209 parts In-Stock

1+ parts

-

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$0.156

209

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$0.156

Distributors (In-Stock)

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Digiode

USA . 1,956 parts In-Stock

1+ parts

$0.141

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1,956

$0.141

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Vyrian

USA . 7,151 parts In-Stock

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Anansix

USA . 2,230 parts In-Stock

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2,230

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Distributors (Availability)

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Corphita

USA . 2,490 parts In-Stock

1+ parts

$0.133

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2,490

$0.133

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Component Stockers USA

USA . 267 parts In-Stock

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$0.140

100+ parts

$0.130

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267

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$0.130

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Corohmni

South Africa . 64 parts In-Stock

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$0.148

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64

$0.148

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Metaverse IC Inc.

Canada . 136,888 parts In-Stock

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136,888

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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QUARKTWIN TECHNOLOGY LTD

USA . 27,028 parts In-Stock

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Perfect Parts

USA . 13,440 parts In-Stock

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SupplyDigital Components

Austria . 5,045 parts In-Stock

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Problanco Electronics

Mexico . 4,310 parts In-Stock

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4,310

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Kulean Microsystems

USA . 2,780 parts In-Stock

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2,780

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Supply Digital

USA . 1,288 parts In-Stock

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TANS Electronics

Latvia . 1,286 parts In-Stock

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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350

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Microchip USA

USA . 309 parts In-Stock

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309

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Continental Prestige Electronics

USA . 209 parts In-Stock

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$0.127

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209

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$0.127

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Overview

Enhance your electronics projects with the NZT6717 by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers high-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a maximum power dissipation of 1W and a maximum collector-emitter voltage of 80V, this NPN transistor offers reliability and efficiency. Whether you're designing a new circuit or upgrading an existing one, the NZT6717 provides the performance and durability you need. Upgrade your projects today with Onsemi's top-notch transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable and efficient operation in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and space-saving benefits in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape is commonly used and facilitates efficient placement and soldering on the circuit board.

No. of Terminals: 4

4 terminals provide necessary connections for the transistor to function properly in a circuit.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures sufficient amplification in the circuit, enabling proper signal control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 80 V

An 80V maximum collector-emitter voltage rating allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon material offers reliable performance and high efficiency in transistor operation.

Maximum Collector Current (IC): 1.2 A

With a maximum collector current of 1.2A, this transistor can handle significant current levels, suitable for various applications.

Terminal Finish: MATTE TIN

Matte Tin finish on the terminals provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and integration, accommodating various design requirements.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and ensures proper connection for the transistor's operation.

Maximum Time At Peak Reflow Temperature (s): 30

Ability to withstand peak reflow temperature for 30 seconds ensures reliable soldering during PCB assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C allows for efficient soldering process during assembly, ensuring proper connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT6717 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NZT6717 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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