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MBT3904DW1T1G

Onsemi

MBT3904DW1T1G by Onsemi

MBT3904DW1T1G by Onsemi is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 300MHz.

Median Price

$0.046

Lifecycle Status

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Chip1Stop

Japan . 23,440 parts In-Stock

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Arrow

USA . 63,000 parts In-Stock

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$0.129

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$0.047

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$0.129

$0.047

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$0.012

Distrelec

Netherlands . 2,452 parts In-Stock

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Mouser Electronics

USA . 147,629 parts In-Stock

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Farnell

UK . 665,926 parts In-Stock

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Canada . 588,000 parts In-Stock

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Rochester

USA . 551,926 parts In-Stock

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DigiKey

USA . 551,926 parts In-Stock

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USA . 327 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Maritex

Poland . 6,000 parts In-Stock

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Nova Conductors

Japan . 31 parts In-Stock

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Bristol Electronics

USA . 573,479 parts In-Stock

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TME

Poland . 242 parts In-Stock

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Component Electronics Inc.

Canada . 30 parts In-Stock

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IBS Electronics

USA . 2,155,220 parts In-Stock

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Semi Source

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NPI Materials, Inc.

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Atlantic Semiconductor

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South Africa . 164 parts In-Stock

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Ampacity Inc.

Singapore . 552,221 parts In-Stock

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Semicontronic

India . 536,195 parts In-Stock

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Corphita

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Argo Parts USA

USA . 4,991 parts In-Stock

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Advanced Electronics

New Zealand . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,076 parts In-Stock

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Modulus Dynamics

Lithuania . 16,076 parts In-Stock

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Perfect Parts

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Israel . 2,973,000 parts In-Stock

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Authorized Procurement Solutions

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Israel . 243,336 parts In-Stock

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USA . 128,915 parts In-Stock

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Continental Prestige Electronics

USA . 62,926 parts In-Stock

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Glotronic Ltd.

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UHIMA Technologies

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Netroflash

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Overview

Looking for a high-quality small signal bipolar junction transistor? Look no further than the MBT3904DW1T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products that are designed to exceed your expectations. The MBT3904DW1T1G is perfect for amplifier applications and offers exceptional performance. With its compact package shape and surface mount capability, it's ideal for space-constrained designs. You'll appreciate the benefits of its NPN polarity, maximum power dissipation of 0.15W, and maximum collector-emitter voltage of 40V. Don't settle for anything less than the best - choose the MBT3904DW1T1G from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and can improve performance in certain applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

This surface mount capability allows for easy installation on PCBs, saving space and improving overall manufacturability.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and alignment on the PCB, simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels while maintaining reliability.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures consistent and stable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40 V provides a wide range of voltage tolerance for different applications.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300 MHz indicates good high-frequency performance, suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3904DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3904DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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