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MBT3904DW1T3G

Onsemi

MBT3904DW1T3G by Onsemi

MBT3904DW1T3G by Onsemi is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. This small outline package features gull wing terminals and can operate at up to 150°C.

Median Price

$0.036

Lifecycle Status

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26

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1k+

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Arrow

USA . 43 parts In-Stock

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$0.032

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Farnell

UK . 902 parts In-Stock

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$0.148

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$0.053

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902

$0.148

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DigiKey

USA . 142 parts In-Stock

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$0.190

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$0.071

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$0.045

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$0.034

142

$0.190

$0.071

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$0.034

Mouser Electronics

USA . 8,130 parts In-Stock

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$0.078

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$0.042

Element14

Singapore . 902 parts In-Stock

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902

$0.262

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Avnet

USA . 150,000 parts In-Stock

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Newark

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Flip Electronics (Authorized)

USA . 60,000 parts In-Stock

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Future Electronics

Canada . 40,000 parts In-Stock

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Verical

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Master Electronics

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Chip1Stop

Japan . 6,346 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Digiode

USA . 1,807 parts In-Stock

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$0.141

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TME

Poland . 8,589 parts In-Stock

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$0.170

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$0.067

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$0.043

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$0.028

8,589

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$0.028

Chip Stock

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Vyrian

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IBS Electronics

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Cyclops Electronics Ltd

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NAC Semi

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ComSIT Distribution GmbH

Germany . 16,517 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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Semtec, LLC

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A2Z Electronics, Inc.

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Semicontronic

India . 102,606 parts In-Stock

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Ampacity Inc.

Singapore . 102,603 parts In-Stock

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Corohmni

South Africa . 82 parts In-Stock

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Argo Parts USA

USA . 1,873 parts In-Stock

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Corphita

USA . 221 parts In-Stock

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Continental Prestige Electronics

USA . 7,562 parts In-Stock

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$0.081

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.449

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$1.319

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$1.188

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Aztec Data Supply Inc.

USA . 399 parts In-Stock

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ChipstoGo Electronic ltd

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GreenTree Electronics

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Eastek

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Lixinc

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Problanco Electronics

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 6,991 parts In-Stock

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TANS Electronics

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QUARKTWIN TECHNOLOGY LTD

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UHIMA Technologies

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Overview

Looking for a high-quality NPN transistor for your amplifier applications? Look no further than the MBT3904DW1T3G by Onsemi. With a reputation for excellence in the industry, Onsemi delivers top-notch products that guarantee reliability and performance. This small signal BJT transistor offers a convenient surface-mount package, making it easy to integrate into your designs. Enjoy the benefits of its maximum power dissipation of 0.15W and maximum operating temperature of 150°C. Trust Onsemi to provide you with the quality and value you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for independent control and operation, enhancing the transistor's performance.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for audio and signal processing applications.

Surface Mount: YES

Surface mounting allows for easy and compact PCB integration, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.15 W

With a low power dissipation, this transistor can operate efficiently without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures reliability and stability under varying environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

This voltage rating allows for safe operation in a wide range of voltage applications.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency enables fast signal processing and amplification, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3904DW1T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3904DW1T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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