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MBT35200MT1

Onsemi

MBT35200MT1 by Onsemi

MBT35200MT1 by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a min DC current gain of 100 and operates at a max temperature of 150 °C. Ideal for switching applications due to its high transition frequency of 100MHz and small outline package style.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,910 parts In-Stock

1+ parts

$1.210

100+ parts

$0.441

1k+ parts

$0.379

10k+ parts

-

2,910

$1.210

$0.441

$0.379

-

Rochester

USA . 29,605 parts In-Stock

1+ parts

-

100+ parts

$0.225

1k+ parts

$0.186

10k+ parts

$0.166

29,605

-

$0.225

$0.186

$0.166

DigiKey

USA . 29,605 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.280

29,605

-

-

-

$0.280

Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.208

21,000

-

-

-

$0.208

Master Electronics

USA . 11,900 parts In-Stock

1+ parts

-

100+ parts

$1.980

1k+ parts

$1.690

10k+ parts

-

11,900

-

$1.980

$1.690

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 2,860 parts In-Stock

1+ parts

$0.148

100+ parts

$0.155

1k+ parts

$0.146

10k+ parts

-

2,860

$0.148

$0.155

$0.146

-

Digiode

USA . 1,037 parts In-Stock

1+ parts

$0.175

100+ parts

-

1k+ parts

-

10k+ parts

-

1,037

$0.175

-

-

-

Vyrian

USA . 2,011 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

2,011

$0.184

-

-

-

North Shore Components

USA . 5,978 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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5,978

-

-

-

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BCID Electronics Ltd.

Israel . 1,420 parts In-Stock

1+ parts

-

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-

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1,420

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 359 parts In-Stock

1+ parts

$0.148

100+ parts

-

1k+ parts

-

10k+ parts

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359

$0.148

-

-

-

Corphita

USA . 1,492 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

-

1,492

$0.166

-

-

-

Continental Prestige Electronics

USA . 29,605 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.166

10k+ parts

-

29,605

-

-

$0.166

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Perfect Parts

USA . 19,757 parts In-Stock

1+ parts

-

100+ parts

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19,757

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 16,724 parts In-Stock

1+ parts

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16,724

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Kepictronics

USA . 10,000 parts In-Stock

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10,000

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Kulean Microsystems

USA . 4,754 parts In-Stock

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4,754

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Assy Fe

Spain . 3,480 parts In-Stock

1+ parts

-

100+ parts

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3,480

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-

-

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TANS Electronics

Latvia . 3,439 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,439

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-

-

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SupplyDigital Components

Austria . 2,925 parts In-Stock

1+ parts

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2,925

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Authorized Procurement Solutions

USA . 2,910 parts In-Stock

1+ parts

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100+ parts

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2,910

-

-

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GreenTree Electronics

Israel . 2,910 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,910

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-

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Problanco Electronics

Mexico . 914 parts In-Stock

1+ parts

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914

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UHIMA Technologies

Türkiye . 211 parts In-Stock

1+ parts

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100+ parts

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211

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-

Overview

Discover the MBT35200MT1 by Onsemi, a top-notch Small Signal BJT that offers unmatched quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is ideal for switching applications. With a maximum collector-emitter voltage of 35V and a DC current gain of 100, this transistor delivers exceptional performance. Its compact design and surface-mount capability make it perfect for various electronic projects. Experience the value and benefits of the MBT35200MT1 - a high-quality component that will elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, making this transistor suitable for such purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering high efficiency and fast response times.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB integration, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 1.75 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and easy to handle, making it suitable for various applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections and easy soldering, improving overall reliability.

No. of Terminals: 6

Six terminals offer flexibility in circuit connections, allowing for versatile usage scenarios.

Maximum Collector-Emitter Voltage: 35 V

High collector-emitter voltage rating enables the transistor to handle high voltage applications safely.

Maximum Collector Current (IC): 2 A

High collector current rating allows the transistor to handle higher loads, expanding its range of applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT35200MT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MBT35200MT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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