Loading...

MBT3904DW1T3

Onsemi

MBT3904DW1T3 by Onsemi

MBT3904DW1T3 by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a hFE of 30, Vce of 40V, and fT of 300MHz. This surface-mount device in a small outline package features Gull Wing terminals and operates at peak reflow temp of 235 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 182,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

182,500

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Bristol Electronics

USA . 9,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,800

-

-

-

-

Classic Components Corporation

USA . 1,144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,144

-

-

-

-

Digiode

USA . 272 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

272

-

-

-

-

Quantum Digital Technology

USA . 84 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

84

-

-

-

-

Vyrian

USA . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 22,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,400

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

SupplyDigital Components

Austria . 8,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,264

-

-

-

-

Kulean Microsystems

USA . 7,428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,428

-

-

-

-

TANS Electronics

Latvia . 7,085 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,085

-

-

-

-

Kepictronics

USA . 5,164 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,164

-

-

-

-

Metaverse IC Inc.

Canada . 5,164 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,164

-

-

-

-

UHIMA Technologies

Türkiye . 960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

960

-

-

-

-

Problanco Electronics

Mexico . 321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

321

-

-

-

-

Corohmni

South Africa . 219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

219

-

-

-

-

Corphita

USA . 141 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

141

-

-

-

-

Overview

Elevate your electronics projects with the MBT3904DW1T3 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for amplification applications. Manufactured by Onsemi, known for their reliable and high-performance components, this NPN transistor boasts a sleek rectangular package design and Gull Wing terminals for easy installation. With a minimum DC Current Gain of 30 and a maximum Collector-Emitter Voltage of 40V, this transistor offers exceptional performance and durability. Upgrade your circuits with the MBT3904DW1T3 and experience superior quality and reliability in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for more flexibility in circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during production.

No. of Elements: 2

Having 2 elements allows for more versatile circuit configurations and applications.

Minimum DC Current Gain (hFE): 30

Ensures consistent and stable amplification performance in various operating conditions.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation in circuits with higher voltage requirements without risking damage to the transistor.

Transistor Element Material: SILICON

Silicon transistors offer reliable performance and durability in a wide range of environments.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency ensures stable and accurate amplifier performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3904DW1T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3904DW1T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20