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MBT3906DW1T1G

Onsemi

MBT3906DW1T1G by Onsemi

MBT3906DW1T1G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V. It is commonly used as an amplifier in various applications. This surface mount transistor has a package style of small outline and a nominal transition frequency of 250MHz.

Median Price

$0.030

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Chip1Stop

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Arrow

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Verical

USA . 84,000 parts In-Stock

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Rochester

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Master Electronics

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Digiode

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TME

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Chip Stock

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Vyrian

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Bristol Electronics

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Connector Distribution Corp

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Right Parts Inc.

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Singapore . 145,978 parts In-Stock

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Component Stockers USA

USA . 268,515 parts In-Stock

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Continental Prestige Electronics

USA . 5,793 parts In-Stock

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Argo Parts USA

USA . 3,608 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Aranea Global

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Aztec Data Supply Inc.

USA . 103 parts In-Stock

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Perfect Parts

USA . 1,043,234 parts In-Stock

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GreenTree Electronics

Israel . 579,000 parts In-Stock

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Eastek

USA . 150,000 parts In-Stock

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RC Electronics

USA . 106,425 parts In-Stock

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Glotronic Ltd.

UK . 93,600 parts In-Stock

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ChipstoGo Electronic ltd

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Kepictronics

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,603 parts In-Stock

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iodParts Technologies Inc.

India . 16,190 parts In-Stock

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Lixinc

USA . 11,959 parts In-Stock

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Kulean Microsystems

USA . 8,312 parts In-Stock

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TANS Electronics

Latvia . 7,521 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 5,917 parts In-Stock

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Spain . 4,500 parts In-Stock

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SupplyDigital Components

Austria . 2,779 parts In-Stock

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UHIMA Technologies

Türkiye . 862 parts In-Stock

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Futuretech Components

Singapore . 521 parts In-Stock

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Overview

Discover the MBT3906DW1T1G by Onsemi - a high-quality Small Signal Bipolar Junction Transistor (BJT) with impressive advantages. Manufactured by Onsemi, a trusted leader in the industry, this PNP transistor is perfect for amplifier applications. Its compact, surface-mount package and gull wing terminals ensure easy installation and optimal performance. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 30, this transistor offers exceptional value and benefits to customers. Experience superior quality and reliability with the MBT3906DW1T1G by Onsemi, the perfect choice for your electronic projects.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This product's plastic/epoxy package body material provides durability and protection, making it suitable for various applications.

Polarity or Channel Type

PNP - The PNP polarity or channel type of this transistor allows for easy integration into PNP transistor-based circuits and designs.

Configuration

SEPARATE, 2 ELEMENTS - With a separate configuration and two elements, this transistor offers enhanced functionality and versatility in circuit design.

Transistor Application

AMPLIFIER - Designed specifically for amplifier applications, this transistor ensures optimal amplification performance.

Surface Mount

YES - The surface mount capability of this product enables convenient and space-saving PCB mounting during assembly.

Package Shape

RECTANGULAR - The rectangular package shape of this transistor facilitates easy placement and installation within electronic circuits and systems.

Terminal Form

GULL WING - The gull-wing terminal form of this transistor provides strong solder joint connections, enhancing reliability and durability.

No. of Elements

2 - With two elements, this transistor offers increased functionality and design options.

No. of Terminals

6 - The six terminals of this transistor allow for easy connection and integration within electronic circuits.

Maximum Power Dissipation (Abs)

0.15 W - With a maximum power dissipation of 0.15 W, this transistor can handle moderate power requirements efficiently.

Package Style (Meter)

SMALL OUTLINE - The small outline package style of this transistor ensures space-efficient integration and accommodates compact circuit designs.

Minimum DC Current Gain (hFE)

30 - The minimum DC current gain of 30 ensures reliable and consistent amplification performance.

Maximum Operating Temperature

150 °C - With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage

40 V - The maximum collector-emitter voltage of 40 V allows for safe and efficient operation within specified voltage limits.

Transistor Element Material

SILICON - The silicon transistor element material provides excellent performance characteristics, making it a reliable choice for various applications.

Maximum Turn On Time (ton)

70 ns - The maximum turn-on time of 70 ns ensures quick response and efficient operation in time-sensitive applications.

Maximum Collector Current (IC)

0.2 A - With a maximum collector current of 0.2 A, this transistor can handle moderate electrical currents without sacrificing performance.

Maximum Turn Off Time (toff)

300 ns - The maximum turn-off time of 300 ns ensures smooth and efficient operation during switching and transitioning.

Terminal Finish

MATTE TIN - The matte tin terminal finish provides excellent solderability and robustness, ensuring long-lasting connections and reliability.

Terminal Position

DUAL - The dual terminal position allows for versatile board designs and multiple connection options.

Moisture Sensitivity Level (MSL)

1 - With a moisture sensitivity level of 1, this transistor is highly resistant to moisture-induced failures and suitable for various environments.

Maximum Time At Peak Reflow Temperature (s)

30 - This transistor can withstand the peak reflow temperature for up to 30 seconds, ensuring reliable soldering during assembly.

Peak Reflow Temperature °C

260 - The peak reflow temperature of 260°C allows for efficient soldering during assembly processes.

Nominal Transition Frequency (fT)

250 MHz - With a nominal transition frequency of 250 MHz, this transistor is capable of handling high-frequency signals and delivering reliable performance in RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3906DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3906DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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