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BC547CG

Onsemi

BC547CG by Onsemi

BC547CG by Onsemi is a NPN BJT with 3 terminals. It has a max power dissipation of 0.625W, hFE of 420, and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.

Median Price

$0.107

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 33,895 parts In-Stock

1+ parts

$0.214

100+ parts

$0.169

1k+ parts

$0.107

10k+ parts

$0.064

33,895

$0.214

$0.169

$0.107

$0.064

Adafruit Industries

USA . 550 parts In-Stock

1+ parts

$0.420

100+ parts

$0.399

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$0.399

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-

550

$0.420

$0.399

$0.399

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Farnell

UK . 318,657 parts In-Stock

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$0.107

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318,657

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$0.107

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Rochester

USA . 306,629 parts In-Stock

1+ parts

-

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$0.106

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$0.088

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$0.078

306,629

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$0.106

$0.088

$0.078

DigiKey

USA . 306,629 parts In-Stock

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-

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$0.130

306,629

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$0.130

Verical

USA . 31,395 parts In-Stock

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$0.107

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$0.064

31,395

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$0.107

$0.064

Chip1Stop

Japan . 1,834 parts In-Stock

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$0.023

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1,834

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$0.023

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Distributors (In-Stock)

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Digiode

USA . 5,663 parts In-Stock

1+ parts

$0.083

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-

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5,663

$0.083

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Nova Conductors

Japan . 206 parts In-Stock

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$0.520

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206

$0.520

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DigiKey Marketplace

USA . 318,798 parts In-Stock

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318,798

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Vyrian

USA . 145,970 parts In-Stock

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Chip Stock

USA . 74,000 parts In-Stock

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VNN

France . 4,359 parts In-Stock

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4,359

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ComSIT Distribution GmbH

Germany . 3,655 parts In-Stock

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3,655

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ComSIT USA

USA . 3,655 parts In-Stock

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Anansix

USA . 668 parts In-Stock

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668

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Distributors (Availability)

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Ampacity Inc.

Singapore . 292,286 parts In-Stock

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$0.020

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292,286

$0.020

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Semicontronic

India . 146,140 parts In-Stock

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$0.020

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$0.020

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$0.019

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146,140

$0.020

$0.020

$0.019

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Corohmni

South Africa . 379 parts In-Stock

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$0.028

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379

$0.028

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Corphita

USA . 2,165 parts In-Stock

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$0.078

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2,165

$0.078

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Continental Prestige Electronics

USA . 327,184 parts In-Stock

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$0.180

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$0.176

327,184

$0.180

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$0.176

Argo Parts USA

USA . 9,013 parts In-Stock

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$0.180

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$0.175

9,013

$0.180

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$0.175

Modulus Dynamics

Lithuania . 12,121 parts In-Stock

1+ parts

$1.225

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$1.225

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$1.225

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12,121

$1.225

$1.225

$1.225

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Perfect Parts

USA . 514,692 parts In-Stock

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514,692

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GreenTree Electronics

Israel . 56,324 parts In-Stock

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Authorized Procurement Solutions

USA . 56,324 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,658 parts In-Stock

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27,658

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Robosynatics

Brazil . 22,786 parts In-Stock

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$1.526

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$1.495

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$1.495

22,786

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$1.495

$1.495

TANS Electronics

Latvia . 7,108 parts In-Stock

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SupplyDigital Components

Austria . 6,188 parts In-Stock

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UNI Independent Distributors

Spain . 5,754 parts In-Stock

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Kulean Microsystems

USA . 5,554 parts In-Stock

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Netroflash

USA . 2,500 parts In-Stock

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$0.510

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$0.494

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$0.484

2,500

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$0.494

$0.484

Problanco Electronics

Mexico . 1,767 parts In-Stock

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1,767

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UHIMA Technologies

Türkiye . 860 parts In-Stock

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860

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Overview

Unlock the power of precision with the BC547CG from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality small signal bipolar junction transistors that are perfect for amplifier applications. The BC547CG offers a high DC current gain, maximum power dissipation of 0.625W, and a peak reflow temperature of 260°C. With its NPN polarity and through-hole terminal form, this transistor provides reliable performance and versatility for your electronic projects. Trust Onsemi to provide you with the tools you need to succeed in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, NPN transistors are ideal for many electronic projects.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio and signal processing.

Package Shape: ROUND

Allows for easy mounting and heat dissipation, improving overall performance and reliability.

Terminal Form: THROUGH-HOLE

Enables easy insertion and soldering onto the circuit board, providing a secure connection for efficient operation.

No. of Terminals: 3

Provides the necessary connections for proper functioning in amplifier circuits, ensuring compatibility and ease of use.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels without overheating, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, ensuring stable performance in various environments.

Maximum Collector-Emitter Voltage: 45 V

Supports higher voltage requirements, making it suitable for many amplifier and signal processing tasks.

Transistor Element Material: SILICON

Offers high performance and reliability, making the transistor ideal for demanding applications.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current loads, ensuring stable operation in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering, ensuring secure connections for stable operation.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes, ensuring reliable assembly in manufacturing.

Nominal Transition Frequency (fT): 300 MHz

Offers high frequency response, making it suitable for high-speed signal processing and amplification tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547CG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC547CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-592-3426, 5961015923426

NIIN

015923426

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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