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MBT3946DW1T1

Onsemi

MBT3946DW1T1 by Onsemi

MBT3946DW1T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. This transistor comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 49,255 parts In-Stock

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-

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$0.053

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$0.044

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$0.039

49,255

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$0.053

$0.044

$0.039

DigiKey

USA . 49,255 parts In-Stock

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$0.070

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Verical

USA . 41,387 parts In-Stock

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$0.049

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$0.049

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Digiode

USA . 1,378 parts In-Stock

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$0.041

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Vyrian

USA . 951 parts In-Stock

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Chip Stock

USA . 68,900 parts In-Stock

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DigiKey Marketplace

USA . 49,255 parts In-Stock

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Sogenti Electronics

Canada . 32,500 parts In-Stock

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R&J Components

USA . 9,548 parts In-Stock

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Prism Electronics

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Cyclops Electronics Ltd

UK . 5,000 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Speed Components Ltd

Israel . 3,000 parts In-Stock

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Semi Source

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PC Components Company LLC

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Bristol Electronics

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Sensible Micro Corp

USA . 2,956 parts In-Stock

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$0.029

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$0.027

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EMSNET

USA . 2,956 parts In-Stock

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Quantum Digital Technology

USA . 2,949 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,830 parts In-Stock

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Microfarads

USA . 1,262 parts In-Stock

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Component Electronics Inc.

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Corohmni

South Africa . 331 parts In-Stock

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Corphita

USA . 1,656 parts In-Stock

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Continental Prestige Electronics

USA . 49,255 parts In-Stock

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Perfect Parts

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Kulean Microsystems

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Metaverse IC Inc.

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Problanco Electronics

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SupplyDigital Components

Austria . 2,544 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,830 parts In-Stock

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Assy Fe

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Glotronic Ltd.

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Futuretech Components

Singapore . 391 parts In-Stock

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UHIMA Technologies

Türkiye . 167 parts In-Stock

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TANS Electronics

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Overview

Looking for a reliable and high-quality solution for your amplifier needs? Look no further than the MBT3946DW1T1 by Onsemi. As a leading manufacturer in the industry of Small Signal Bipolar Junction Transistors (BJT), Onsemi guarantees top-notch performance and durability. Whether you're a professional or hobbyist, this NPN and PNP transistor offers exceptional value with its versatile applications, including amplifiers. With a maximum operating temperature of 150 °C and a nominal transition frequency of 300 MHz, this transistor ensures optimal functionality for all your projects. Don't compromise on quality - choose Onsemi for your electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Offers flexibility and versatility in circuit design, allowing for different configurations and applications.

Configuration: SEPARATE, 2 ELEMENTS

Enables independent control of each transistor element, enhancing overall performance and functionality.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high-quality amplification of signals.

Terminal Form: GULL WING

Facilitates easy surface mount installation, enhancing convenience and efficiency in circuit assembly.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliability and longevity in various operating conditions.

Maximum Collector-Emitter Voltage: 40 V

Suitable for a wide range of voltage requirements in different circuit applications.

Nominal Transition Frequency (fT): 300 MHz

Provides high-frequency performance, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3946DW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3946DW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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