Loading...

MBT3906DW1T2G

Onsemi

MBT3906DW1T2G by Onsemi

MBT3906DW1T2G by Onsemi is a PNP BJT transistor with hFE of 100, fT of 250 MHz, and IC of 0.2 A. Ideal for surface mount applications with max temp of 150 °C, it's suitable for low-power amplification in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,638 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,638

-

-

-

-

Digiode

USA . 732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

732

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 899 parts In-Stock

1+ parts

$12.060

100+ parts

-

1k+ parts

-

10k+ parts

-

899

$12.060

-

-

-

Kepictronics

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

51,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,297 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,297

-

-

-

-

SupplyDigital Components

Austria . 7,306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,306

-

-

-

-

TANS Electronics

Latvia . 7,054 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,054

-

-

-

-

Kulean Microsystems

USA . 6,459 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,459

-

-

-

-

Corphita

USA . 1,489 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,489

-

-

-

-

Problanco Electronics

Mexico . 322 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

322

-

-

-

-

UHIMA Technologies

Türkiye . 123 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

123

-

-

-

-

Corohmni

South Africa . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

Perfect Parts

USA . 64 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

64

-

-

-

-

Overview

Transform your electronics projects with the MBT3906DW1T2G by Onsemi, a high-quality PNP small signal bipolar junction transistor that offers reliable performance and efficiency. Manufactured by Onsemi, a trusted leader in semiconductor technology, this transistor is perfect for a wide range of applications. Whether you're building amplifiers, sensors, or switching circuits, this transistor provides exceptional value with its excellent DC current gain and maximum power dissipation. Upgrade your designs with the MBT3906DW1T2G and experience the superior quality and performance that Onsemi is known for.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are often preferred for switching applications, making this product suitable for high-speed switching circuits.

Surface Mount: YES

Surface mount capability allows for easy placement and soldering on PCBs, making the product ideal for compact and densely populated circuit designs.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation ensures efficient operation and helps in minimizing heat dissipation issues in the circuit.

Minimum DC Current Gain (hFE): 100

The high DC current gain ensures amplification of weak signals with minimal distortion, making this transistor suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range provides versatility in various operating environments, ensuring stability and reliability of the transistor.

Maximum Collector Current (IC): 0.2 A

The high collector current rating allows for handling higher current loads, making this transistor suitable for applications where higher currents are required.

Terminal Finish: TIN

TIN terminal finish provides good solderability and ensures a reliable electrical connection, contributing to the overall performance and longevity of the product.

Maximum Time At Peak Reflow Temperature (s): 30

The specified peak reflow time ensures proper solder reflow and prevents damage to the transistor during assembly processes, ensuring proper functionality.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable soldering in lead-free processes, making this transistor suitable for modern RoHS-compliant assembly techniques.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency allows for high-speed signal switching and amplification, making this transistor ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3906DW1T2G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

MBT3906DW1T2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17