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MBT3946DW1T1G

Onsemi

MBT3946DW1T1G by Onsemi

MBT3946DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for amplifier applications. It features 2 elements in a rectangular package with Gull Wing terminals. With a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz, it offers high performance in a compact design.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 12,481 parts In-Stock

1+ parts

$0.197

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$0.078

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$0.053

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Mouser Electronics

USA . 162,258 parts In-Stock

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$0.200

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$0.075

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$0.048

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$0.040

162,258

$0.200

$0.075

$0.048

$0.040

DigiKey

USA . 281 parts In-Stock

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$0.200

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$0.075

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$0.048

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$0.200

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$0.048

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Rochester

USA . 37,690 parts In-Stock

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$0.026

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Verical

USA . 36,750 parts In-Stock

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Canada . 21,000 parts In-Stock

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Master Electronics

USA . 15,000 parts In-Stock

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Farnell

UK . 12,966 parts In-Stock

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Element14

Singapore . 12,966 parts In-Stock

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Arrow

USA . 6,000 parts In-Stock

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Chip1Stop

Japan . 5,400 parts In-Stock

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EBV Elektronik

Germany . 3,000 parts In-Stock

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DF Sales Co.

USA . 8,500 parts In-Stock

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$0.010

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DF Sales Co.

USA . 8,500 parts In-Stock

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Digiode

USA . 858 parts In-Stock

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Greenchips

USA . 2,445 parts In-Stock

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2,445

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Nova Conductors

Japan . 300 parts In-Stock

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TME

Poland . 962 parts In-Stock

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$0.187

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$0.073

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$0.044

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$0.031

962

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$0.073

$0.044

$0.031

Maritex

Poland . 1,636 parts In-Stock

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$0.238

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Flip Electronics

USA . 219,724 parts In-Stock

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IBS Electronics

USA . 180,000 parts In-Stock

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UK . 32,220 parts In-Stock

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NAC Semi

USA . 27,000 parts In-Stock

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Microfarads

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PC Components Company LLC

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Speed Components Ltd

Israel . 2,597 parts In-Stock

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Florida Circuit

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MISTER SPROCKETS

USA . 1,356 parts In-Stock

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Flex Direct, LLC

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Quantum Digital Technology

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Cogito LLC

Ukraine . 405 parts In-Stock

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Atlantic Semiconductor

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Corohmni

South Africa . 272 parts In-Stock

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Ampacity Inc.

Singapore . 76,757 parts In-Stock

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Semicontronic

India . 76,355 parts In-Stock

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Corphita

USA . 1,496 parts In-Stock

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Component Stockers USA

USA . 1,036,757 parts In-Stock

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 848 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,097 parts In-Stock

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$0.692

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Perfect Parts

USA . 1,215,639 parts In-Stock

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Glotronic Ltd.

UK . 189,600 parts In-Stock

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RC Electronics

USA . 136,250 parts In-Stock

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GreenTree Electronics

Israel . 126,000 parts In-Stock

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Singapore . 99,000 parts In-Stock

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Canada . 90,000 parts In-Stock

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Continental Prestige Electronics

USA . 63,000 parts In-Stock

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ChipstoGo Electronic ltd

UK . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,713 parts In-Stock

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Eastek

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Latvia . 7,029 parts In-Stock

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Austria . 3,394 parts In-Stock

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Mexico . 593 parts In-Stock

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the MBT3946DW1T1G by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers top-notch products that exceed industry standards. The MBT3946DW1T1G offers customers exceptional value and performance, perfect for amplifier applications. Its NPN and PNP configuration with separate elements ensures versatility and reliability. Trust Onsemi's expertise and choose the MBT3946DW1T1G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: NPN AND PNP

Offers versatility and flexibility in circuit design, as both NPN and PNP transistors are included in the package.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent use of each transistor element, providing more control over the circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio and signal amplification circuits.

Surface Mount: YES

Facilitates easy PCB assembly and saves space, making it suitable for compact electronic devices.

Terminal Form: GULL WING

Enables efficient soldering and connection to the PCB, ensuring a reliable electrical connection.

Maximum Power Dissipation (Abs): 0.15 W

With a high power dissipation capability, the transistor can handle power effectively without overheating.

Maximum Collector-Emitter Voltage: 40 V

Provides a high voltage tolerance, making it suitable for applications that require higher voltage handling.

Maximum Collector Current (IC): 0.2 A

With a high collector current rating, the transistor can handle larger currents for robust performance.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for high-speed amplification, making it ideal for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3946DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3946DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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