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MBT3904DW1T1

Onsemi

MBT3904DW1T1 by Onsemi

MBT3904DW1T1 by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max operating temp of 150°C, collector-emitter voltage of 40V, and transition frequency of 300MHz. This small outline package features Gull Wing terminals and is surface mountable.

Median Price

$0.062

Lifecycle Status

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34

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1k+

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Rochester

USA . 569,692 parts In-Stock

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$0.053

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$0.044

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DigiKey

USA . 569,692 parts In-Stock

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Verical

USA . 394,954 parts In-Stock

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Master Electronics

USA . 7,220 parts In-Stock

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$1.980

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TEDSS.com

USA . 2,150 parts In-Stock

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Digiode

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Vyrian

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Component Electronics Inc.

Canada . 1,708 parts In-Stock

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$0.750

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Bristol Electronics

USA . 68,989 parts In-Stock

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DigiKey Marketplace

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First Choice Components Inc.

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Sea View Technologies

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Semi Source

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EMSNET

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ACDS - Activité Composants Distribution Service

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PC Components Company LLC

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Connector Distribution Corp

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Right Parts Inc.

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Electronic Expediters

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ComSIT Distribution GmbH

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A2Z Electronics, Inc.

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Inventory MP

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Linux4Media Gmbh

Germany . 2,596 parts In-Stock

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North Shore Components

USA . 2,062 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Corphita

USA . 1,275 parts In-Stock

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Component Stockers USA

USA . 773,513 parts In-Stock

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Continental Prestige Electronics

USA . 568,174 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Problanco Electronics

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SupplyDigital Components

Austria . 7,053 parts In-Stock

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 434 parts In-Stock

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Overview

Enhance your electronic projects with the MBT3904DW1T1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their reliable and innovative components, this NPN transistor is perfect for amplifier applications. With its compact size, high performance, and wide temperature range, the MBT3904DW1T1 offers unmatched value and efficiency for your circuit designs. Explore the endless possibilities this transistor brings to your projects and experience the difference in performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a durable and reliable housing for the transistor, ensuring long-term performance and protection against external elements.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into various amplifier circuits, making this transistor versatile and widely compatible.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers optimal performance and amplification capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance or reliability.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating ensures the transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material known for its excellent electrical properties, ensuring high performance and efficiency in the transistor.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency indicates that this transistor can operate at high speeds, making it ideal for applications requiring fast switching or amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3904DW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3904DW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-512-1623, 5961015121623

NIIN

015121623

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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