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MBT3904DW2T1G

Onsemi

MBT3904DW2T1G by Onsemi

The Onsemi MBT3904DW2T1G is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 300MHz. This small outline transistor operates up to 150 °C and features Gull Wing terminals for surface mounting.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,135 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

11,135

-

$0.053

$0.044

$0.039

DigiKey

USA . 11,135 parts In-Stock

1+ parts

-

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$0.050

11,135

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$0.050

Distributors (In-Stock)

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Digiode

USA . 1,835 parts In-Stock

1+ parts

$0.041

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-

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1,835

$0.041

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Vyrian

USA . 927 parts In-Stock

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$0.043

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927

$0.043

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Distributors (Availability)

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Corphita

USA . 2,295 parts In-Stock

1+ parts

$0.039

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2,295

$0.039

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Corohmni

South Africa . 330 parts In-Stock

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$0.043

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330

$0.043

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QUARKTWIN TECHNOLOGY LTD

USA . 22,439 parts In-Stock

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22,439

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Kepictronics

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,111 parts In-Stock

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Problanco Electronics

Mexico . 4,934 parts In-Stock

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SupplyDigital Components

Austria . 4,271 parts In-Stock

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TANS Electronics

Latvia . 3,223 parts In-Stock

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3,223

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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660

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Overview

Discover the power of the Onsemi MBT3904DW2T1G Small Signal Bipolar Junction Transistor (BJT) - a high-quality component designed to amplify signals with precision and efficiency. Manufactured by Onsemi, known for their commitment to innovation and reliability, this NPN transistor offers customers a versatile solution for various amplifier applications. With a compact design and superior performance, the MBT3904DW2T1G delivers value and benefits that exceed expectations. Experience seamless integration and exceptional results with this cutting-edge transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the transistor and makes it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used configuration in amplifiers and other electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS

Allows for more flexibility and control in circuit designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Easy to mount on PCBs, saving space and making assembly more efficient.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels without overheating, ensuring reliable operation.

Package Shape: RECTANGULAR

Easy to integrate into circuit designs and fits well with standard PCB layouts.

Terminal Form: GULL WING

Provides strong mechanical support and easy soldering during assembly.

No. of Elements: 2

Allows for more complex circuit configurations and improved performance.

No. of Terminals: 6

Provides multiple connection points for versatility in circuit design.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Silicon offers good performance characteristics and reliability in electronic components.

Maximum Turn On Time (ton): 70 ns

Quick turn-on time for fast switching applications.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate current levels for various applications.

Maximum Turn Off Time (toff): 250 ns

Fast turn-off time for efficient operation in switching circuits.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Allows for easy and secure connections in circuit designs.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3904DW2T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3904DW2T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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