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MBT3906DW1T1

Onsemi

MBT3906DW1T1 by Onsemi

MBT3906DW1T1 by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It has a max operating temp of 150 °C, collector-emitter voltage of 40V, and transition frequency of 250MHz. This small outline transistor features Gull Wing terminals and is surface mountable.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,213 parts In-Stock

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-

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$0.053

1k+ parts

$0.044

10k+ parts

$0.039

27,213

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$0.053

$0.044

$0.039

DigiKey

USA . 27,213 parts In-Stock

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$0.070

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$0.070

Verical

USA . 12,250 parts In-Stock

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$0.049

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$0.049

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Digiode

USA . 1,987 parts In-Stock

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$0.041

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$0.041

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Vyrian

USA . 2,411 parts In-Stock

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$0.043

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Component Electronics Inc.

Canada . 2,765 parts In-Stock

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$0.380

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$0.290

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$0.250

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2,765

$0.380

$0.290

$0.250

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Chip Stock

USA . 246,460 parts In-Stock

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Microfarads

USA . 30,868 parts In-Stock

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DigiKey Marketplace

USA . 27,228 parts In-Stock

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Bristol Electronics

USA . 21,687 parts In-Stock

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EMSNET

USA . 10,023 parts In-Stock

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Extreme Components

USA . 8,347 parts In-Stock

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Inventory MP

USA . 6,932 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

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Classic Components Corporation

USA . 5,356 parts In-Stock

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PC Components Company LLC

USA . 4,642 parts In-Stock

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Resion

USA . 3,429 parts In-Stock

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Prism Electronics

USA . 3,352 parts In-Stock

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Connector Distribution Corp

USA . 2,670 parts In-Stock

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Right Parts Inc.

USA . 2,670 parts In-Stock

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Sea View Technologies

USA . 1,250 parts In-Stock

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Semtec, LLC

USA . 736 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 100 parts In-Stock

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$0.039

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100

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Corohmni

South Africa . 194 parts In-Stock

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$0.043

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Continental Prestige Electronics

USA . 27,228 parts In-Stock

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$0.039

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

USA . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,531 parts In-Stock

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Kulean Microsystems

USA . 8,088 parts In-Stock

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TANS Electronics

Latvia . 6,283 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 3,547 parts In-Stock

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Assy Fe

Spain . 3,029 parts In-Stock

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ChipTracer

USA . 2,981 parts In-Stock

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Problanco Electronics

Mexico . 2,205 parts In-Stock

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UHIMA Technologies

Türkiye . 667 parts In-Stock

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Overview

Enhance your electronic projects with the MBT3906DW1T1 by Onsemi. Manufactured by a trusted industry leader, this small signal bipolar junction transistor offers high-quality performance for amplifier applications. With its PNP configuration and 2 separate elements, this transistor provides superior functionality in a compact package. Whether you're a hobbyist or a professional, the MBT3906DW1T1 delivers value, reliability, and efficiency. Elevate your designs with this versatile component from Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and provides flexibility in design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance in signal amplification.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can withstand demanding conditions without compromising performance.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating allows for reliable operation in circuits with higher voltage requirements.

Minimum DC Current Gain (hFE): 30

Having a minimum DC current gain of 30 ensures consistent amplification and signal processing in circuits.

Nominal Transition Frequency (fT): 250 MHz

With a high transition frequency, this transistor is capable of handling high-frequency signals with minimal distortion.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT3906DW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

MBT3906DW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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