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BC807-40LT1G

Onsemi

BC807-40LT1G by Onsemi

BC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for small outline packages in high-speed circuits.

Median Price

$0.025

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

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Chip1Stop

Japan . 855,000 parts In-Stock

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Arrow

USA . 195,000 parts In-Stock

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Verical

USA . 195,000 parts In-Stock

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$0.025

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Farnell

UK . 14,960 parts In-Stock

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$0.038

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$0.035

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RS (Exports)

UK . 6,000 parts In-Stock

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Rochester

USA . 1,682 parts In-Stock

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Element14

Singapore . 80 parts In-Stock

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$0.082

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80

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Distributors (In-Stock)

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Digiode

USA . 1,637 parts In-Stock

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$0.015

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IBS Electronics

USA . 27,040 parts In-Stock

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Bristol Electronics

USA . 12,721 parts In-Stock

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12,721

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Nova Conductors

Japan . 100 parts In-Stock

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$0.174

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Maritex

Poland . 4,100 parts In-Stock

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4,100

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$0.056

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$0.028

Ozdisan Elektronik

Türkiye . 2,210 parts In-Stock

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$57.130

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Vyrian

USA . 216,386 parts In-Stock

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Chip Stock

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Goldney Electronics S.L.

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LIBRA Elektronik GmbH

Germany . 51,525 parts In-Stock

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Diverse Electronics

Canada . 21,000 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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Dan-Mar Components

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ComSIT Distribution GmbH

Germany . 7,535 parts In-Stock

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ComSIT USA

USA . 7,535 parts In-Stock

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Technoshack Inc.

Canada . 4,436 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,946 parts In-Stock

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Semi Source

USA . 3,170 parts In-Stock

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VNN

France . 2,839 parts In-Stock

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Corel Iberica Componentes, S.L.

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Rebound Electronics

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Inventory MP

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Holdelec - ElecDif-Pro

France . 1,600 parts In-Stock

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Martec Srl

Italy . 1,535 parts In-Stock

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Mil-Aero Solutions, Inc.

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Microfarads

USA . 399 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 31 parts In-Stock

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Semicontronic

India . 361,312 parts In-Stock

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Ampacity Inc.

Singapore . 196,105 parts In-Stock

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Corphita

USA . 715 parts In-Stock

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Corohmni

South Africa . 193 parts In-Stock

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Component Stockers USA

USA . 599,684 parts In-Stock

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Argo Parts USA

USA . 1,123 parts In-Stock

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Modulus Dynamics

Lithuania . 2,282 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Continental Prestige Electronics

USA . 81,580 parts In-Stock

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$0.086

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Aztec Data Supply Inc.

USA . 3,930 parts In-Stock

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Perfect Parts

USA . 5,490,013 parts In-Stock

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Kepictronics

USA . 615,000 parts In-Stock

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GreenTree Electronics

Israel . 300,000 parts In-Stock

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Epart123

USA . 270,000 parts In-Stock

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RC Electronics

USA . 130,657 parts In-Stock

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Eastek

USA . 63,000 parts In-Stock

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iodParts Technologies Inc.

India . 16,400 parts In-Stock

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Lixinc

USA . 10,060 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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TANS Electronics

Latvia . 8,251 parts In-Stock

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SupplyDigital Components

Austria . 6,498 parts In-Stock

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Kulean Microsystems

USA . 5,942 parts In-Stock

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Assy Fe

Spain . 4,680 parts In-Stock

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Problanco Electronics

Mexico . 3,538 parts In-Stock

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Robosynatics

Brazil . 3,000 parts In-Stock

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$10.789

S.R.D Solutions

India . 3,000 parts In-Stock

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Lucentia Tech

USA . 3,000 parts In-Stock

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$10.789

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$10.789

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$10.789

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$10.789

$10.789

A-Z Elektronik GmbH

Germany . 2,439 parts In-Stock

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Computer Components Inc. - USA

USA . 2,199 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,626 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.171

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$0.166

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$0.162

1,000

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$0.171

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$0.162

UHIMA Technologies

Türkiye . 741 parts In-Stock

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Overview

Unleash the power of innovation with the BC807-40LT1G by Onsemi. Crafted with precision and excellence, this Small Signal Bipolar Junction Transistor offers unparalleled performance in switching applications. With a maximum VCEsat of only 0.7V and a minimum DC Current Gain of 250, this PNP transistor delivers efficiency like no other. Whether you're designing cutting-edge electronics or enhancing existing systems, trust in Onsemi's expertise to take your projects to the next level. Upgrade to the BC807-40LT1G and experience the difference in quality, reliability, and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective packaging material

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required

Configuration: SINGLE

Simplifies circuit design and layout

Transistor Application: SWITCHING

Ideal for switching applications due to high-speed performance

Surface Mount: YES

Easy to mount on circuit boards

Maximum VCEsat: 0.7 V

Low saturation voltage for efficient operation

Package Shape: RECTANGULAR

Standard packaging shape for easy handling

Terminal Form: GULL WING

Facilitates surface mounting on PCBs

No. of Terminals: 3

Simple connection layout

Maximum Power Dissipation (Abs): 0.3 W

Sufficient power handling capability

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained designs

Minimum DC Current Gain (hFE): 250

High gain for amplification purposes

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures

Maximum Collector-Emitter Voltage: 45 V

Suitable for low-voltage applications

Transistor Element Material: SILICON

Reliable material for transistor construction

Minimum Operating Temperature: -55 °C

Can operate in cold environments

Maximum Collector Current (IC): 0.5 A

Adequate current-carrying capability

Terminal Finish: Matte Tin (Sn) - annealed

Corrosion-resistant terminal finish

Terminal Position: DUAL

Simplifies PCB layout and routing

Maximum Time At Peak Reflow Temperature (s): 40

Allows for reliable soldering during assembly

Peak Reflow Temperature °C: 260

Meets standard reflow temperature requirements

Nominal Transition Frequency (fT): 100 MHz

High transition frequency for fast switching applications

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-40LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC807-40LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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