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BC807-25LT1G

Onsemi

BC807-25LT1G by Onsemi

BC807-25LT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.7V, hFE of 160, and IC of 0.5A. Ideal for switching applications, it operates b/w -55 to 150 °C and has a max VCE of 45V. With a small outline package style and surface mount capability, it offers high performance in compact designs.

Median Price

$0.018

Lifecycle Status

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1k+

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Newark

USA . 24,354 parts In-Stock

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$0.144

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Mouser Electronics

USA . 55,532 parts In-Stock

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DigiKey

USA . 4,221,590 parts In-Stock

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Rochester

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EBV Elektronik

Germany . 3,429,000 parts In-Stock

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Master Electronics

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Farnell

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RS (Exports)

UK . 16,250 parts In-Stock

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Chip1Stop

Japan . 11,598 parts In-Stock

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Arrow

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USA . 200 parts In-Stock

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Nova Conductors

Japan . 29 parts In-Stock

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TME

Poland . 2,222 parts In-Stock

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Vyrian

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IBS Electronics

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ComSIT Distribution GmbH

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Ampacity Inc.

Singapore . 835,467 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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Corphita

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Modulus Dynamics

Lithuania . 9,040 parts In-Stock

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Argo Parts USA

USA . 2,380 parts In-Stock

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Netroflash

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Aztec Data Supply Inc.

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Advanced Electronics

New Zealand . 4,000 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Epart123

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USA . 129,774 parts In-Stock

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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UK . 11,223 parts In-Stock

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Problanco Electronics

Mexico . 6,171 parts In-Stock

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Latvia . 4,340 parts In-Stock

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Brazil . 3,195 parts In-Stock

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Lucentia Tech

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Overview

Discover the BC807-25LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a single PNP configuration and a maximum VCEsat of 0.7V, this transistor offers reliable performance and efficiency. Manufactured by Onsemi, a trusted name in semiconductor technology, this product guarantees superior quality and durability. Ideal for a wide range of electronic applications, the BC807-25LT1G provides customers with exceptional value, benefits, and advantages, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, ideal for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits with other PNP transistors, simplifying design and assembly.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures straightforward integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and reliable performance.

Surface Mount: YES

The surface mount capability saves space on PCBs and simplifies manufacturing processes, making this transistor ideal for compact designs.

Maximum VCEsat: 0.7 V

With a low VCEsat value, this transistor minimizes power loss and heat generation, making it energy-efficient.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on PCBs and efficient use of board space.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections, ensuring reliable and stable performance.

No. of Terminals: 3

With three terminals, this transistor is easy to integrate into circuits and offers flexibility in design.

Maximum Power Dissipation (Abs): 0.3 W

The low power dissipation of 0.3 W helps prevent overheating and ensures the longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and allows for compact designs.

Minimum DC Current Gain (hFE): 160

The high minimum DC current gain of 160 ensures consistent and reliable performance in a variety of operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage of 45 V allows for use in a variety of high voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance, stability, and durability.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature of -55°C, this transistor is suitable for use in extreme temperature environments.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current of 0.5 A allows for use in a variety of high-current applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability, while the annealing process ensures long-term durability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy integration with other components.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100 MHz, this transistor offers fast switching speeds and high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-25LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC807-25LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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