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BC807-40,215

NXP Semiconductors

BC807-40,215 by NXP Semiconductors

NXP Semiconductors' BC807-40,215 is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temp of 150°C and fT of 80MHz, it's ideal for small outline packages in electronic circuits.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

47

In-Stock Inventory

1k+

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Bürklin Elektronik

Germany . 2,257 parts In-Stock

1+ parts

$0.085

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$0.053

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$0.031

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2,257

$0.085

$0.053

$0.031

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Newark

USA . 117 parts In-Stock

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$0.282

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$0.129

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EBV Elektronik

Germany . 5,922,000 parts In-Stock

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TTI

USA . 1,686,000 parts In-Stock

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Arrow

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Avnet

USA . 609,000 parts In-Stock

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Elektronika Sales Private Limited

India . 393,000 parts In-Stock

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Farnell

UK . 387,000 parts In-Stock

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Element14

Singapore . 375,000 parts In-Stock

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Canada . 63,000 parts In-Stock

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Verical

USA . 18,927 parts In-Stock

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Chip1Stop

Japan . 129 parts In-Stock

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Ozdisan Elektronik

Türkiye . 206,475 parts In-Stock

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Digiode

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EXC GmbH

Germany . 1,373 parts In-Stock

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Nova Conductors

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Maritex

Poland . 120,000 parts In-Stock

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IBS Electronics

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NAC Semi

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Chip Stock

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Demsay Elektronik

Türkiye . 270,000 parts In-Stock

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Micros

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Schukat

Germany . 178,500 parts In-Stock

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Partservice

France . 101,619 parts In-Stock

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LIBRA Elektronik GmbH

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Cyclops Electronics Ltd

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Connector Distribution Corp

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Micros sp.j. W. Kędra i J. Lic

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Bristol Electronics

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Semicontronic

India . 4,968,069 parts In-Stock

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Ampacity Inc.

Singapore . 1,605,648 parts In-Stock

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AZTECH Wire

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Modulus Dynamics

Lithuania . 9,011 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Argo Parts USA

USA . 3,711 parts In-Stock

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Netroflash

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Corohmni

South Africa . 1,548 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,324 parts In-Stock

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Perfect Parts

USA . 29,968,057 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 1,519,150 parts In-Stock

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Epart123

USA . 500,000 parts In-Stock

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USA . 380,000 parts In-Stock

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Continental Prestige Electronics

USA . 345,000 parts In-Stock

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Glotronic Ltd.

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iodParts Technologies Inc.

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Component Connect

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iBuyXS LLC

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Brazil . 21,691 parts In-Stock

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Overview

Elevate your electronic designs with the BC807-40,215 from NXP Semiconductors, a leading manufacturer in the industry. This small signal PNP bipolar junction transistor is perfect for switching applications, offering a maximum VCEsat of 0.7V and a minimum DC current gain of 250. With a compact rectangular package style and gull wing terminals, this transistor is easy to integrate into your projects. Experience superior performance and reliability with the BC807-40,215, designed to meet your needs and exceed your expectations. Upgrade your circuits today with this high-quality component that guarantees exceptional value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical and electrical properties, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: PNP

Suitable for applications where current flows out of the base terminal, making it ideal for switching circuits.

Configuration: SINGLE

Simplifies circuit design as it only has one channel, making it easier to integrate into a circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards, saving space and allowing for automated manufacturing processes.

Maximum VCEsat: 0.7 V

Low saturation voltage results in minimal power loss and high efficiency during operation.

Terminal Form: GULL WING

Facilitates easy soldering and mounting onto PCBs, ensuring secure connection and stable performance.

No. of Terminals: 3

Simple and straightforward design with a manageable number of terminals for easy incorporation into circuits.

Maximum Power Dissipation (Abs): 0.35 W

Can handle relatively high power levels without overheating, increasing the reliability and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

Compact package size saves valuable board space and allows for high-density circuit layouts.

Minimum DC Current Gain (hFE): 250

High current gain ensures stable amplification and switching performance in various circuit applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at elevated temperatures, making it suitable for demanding environments or extended use.

Maximum Collector-Emitter Voltage: 45 V

Supports higher voltage applications, offering versatility in circuit design and operation.

Transistor Element Material: SILICON

Silicon material provides excellent performance characteristics, such as high efficiency, low noise, and good thermal stability.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate to high current levels, making it suitable for various circuit requirements.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting orientation and facilitates easier integration into circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a reasonable duration during assembly processes, ensuring proper soldering and reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for efficient soldering and manufacturing processes without damaging the transistor.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency enables fast switching speeds and amplification capabilities, critical in various high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-40,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC807-40,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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