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BC807-25,215

NXP Semiconductors

BC807-25,215 by NXP Semiconductors

BC807-25,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a VCEsat of 0.7V, hFE of 160, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in surface mount configurations.

Median Price

$0.049

Lifecycle Status

Suppliers In-Stock

39

In-Stock Inventory

1k+

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Adafruit Industries

USA . 350 parts In-Stock

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DigiKey

USA . 2 parts In-Stock

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$0.120

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$0.046

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$0.029

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$0.120

$0.046

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Chip1Stop

Japan . 6,772 parts In-Stock

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$0.261

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$0.034

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Newark

USA . 122 parts In-Stock

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Elektronika Sales Private Limited

India . 2,205,000 parts In-Stock

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Arrow

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EBV Elektronik

Germany . 75,000 parts In-Stock

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RS (Exports)

UK . 15,900 parts In-Stock

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Rochester

USA . 1,924 parts In-Stock

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Verical

USA . 1,766 parts In-Stock

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Element14

Singapore . 10 parts In-Stock

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Distributors (In-Stock)

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EXC GmbH

Germany . 2,700 parts In-Stock

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Digiode

USA . 3,888 parts In-Stock

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Bristol Electronics

USA . 1,632 parts In-Stock

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TME

Poland . 8 parts In-Stock

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Maritex

Poland . 3,008 parts In-Stock

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3,008

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$0.061

Nova Conductors

Japan . 42 parts In-Stock

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NAC Semi

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IBS Electronics

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Martec Srl

Italy . 1,606,317 parts In-Stock

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DigiKey Marketplace

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Chip Stock

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Micros sp.j. W. Kędra i J. Lic

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Cyclops Electronics Ltd

UK . 48,574 parts In-Stock

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Sensible Micro Corp

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Partservice

France . 44,630 parts In-Stock

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Schukat

Germany . 35,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 15,010 parts In-Stock

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Rebound Electronics

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EPE Components Inc.

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Semicontronic

India . 4,661,447 parts In-Stock

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Ampacity Inc.

Singapore . 987,395 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 1,050 parts In-Stock

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AZTECH Wire

Italy . 7,651 parts In-Stock

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Argo Parts USA

USA . 422 parts In-Stock

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Modulus Dynamics

Lithuania . 100 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,804 parts In-Stock

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$1.807

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Perfect Parts

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Eastek

USA . 6,801,007 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 720,000 parts In-Stock

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Epart123

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Continental Prestige Electronics

USA . 281,690 parts In-Stock

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Infinite Electronics LLP (Excess)

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CPlus Electronics

USA . 200,000 parts In-Stock

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Kepictronics

USA . 168,400 parts In-Stock

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RC Electronics

USA . 150,000 parts In-Stock

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BidChips

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iBuyXS LLC

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Glotronic Ltd.

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iodParts Technologies Inc.

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Lixinc

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Cyclops Electronics Ltd (Excess)

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Robosynatics

Brazil . 7,072 parts In-Stock

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Lucentia Tech

USA . 7,072 parts In-Stock

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Corohmni

South Africa . 1,950 parts In-Stock

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Supply Digital

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UNI Independent Distributors

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Overview

Enhance your electronic designs with the BC807-25,215 by NXP Semiconductors, a top-quality PNP small signal bipolar junction transistor. Perfect for switching applications, this transistor offers a maximum VCEsat of 0.7V and a minimum DC current gain of 160. With a sleek gull wing package design and a maximum operating temperature of 150°C, this transistor is a reliable choice for your projects. Take advantage of NXP Semiconductors' reputation for excellence and trust in the value and benefits that the BC807-25,215 can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling circuits.

Surface Mount: YES

Surface mount capability makes it easy to solder onto circuit boards, saving time and effort in assembly.

Maximum VCEsat: 0.7 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide reliable electrical connections and easy soldering during assembly.

No. of Terminals: 3

Having 3 terminals allows for connections to various parts of electronic circuits.

Maximum Power Dissipation (Abs): 0.35 W

With a high power dissipation rating, this transistor can handle heat and operate reliably under load.

Package Style (Meter): SMALL OUTLINE

Compact small outline package saves space on circuit boards and in electronic devices.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures consistent and reliable amplification of signals in circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides flexibility in designing circuits with different voltage requirements.

Transistor Element Material: SILICON

Silicon material is known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for handling of larger current flows in circuits.

Terminal Finish: TIN

Tin finish on terminals ensures good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time minimizes heat stress on the transistor during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature withstands the soldering process without damage to the transistor.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency allows for fast switching and amplification of signals in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-25,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC807-25,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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