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BC846BW-7-F

Diodes Incorporated

BC846BW-7-F by Diodes Incorporated

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.

Median Price

$0.042

Lifecycle Status

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Adafruit Industries

USA . 60 parts In-Stock

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Mouser Electronics

USA . 237 parts In-Stock

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DigiKey

USA . 96 parts In-Stock

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Verical

USA . 456,000 parts In-Stock

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Future Electronics

Canada . 54,000 parts In-Stock

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Element14

Singapore . 655 parts In-Stock

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Farnell

UK . 197 parts In-Stock

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$0.066

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Arrow

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Nova Conductors

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Bristol Electronics

USA . 3,000 parts In-Stock

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TME

Poland . 1,350 parts In-Stock

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$0.160

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Chip Stock

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Vyrian

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IBS Electronics

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NAC Semi

USA . 42,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Rutronik

Germany . 6,000 parts In-Stock

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VNN

France . 5,173 parts In-Stock

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Pegasus Components GmbH

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ACDS - Activité Composants Distribution Service

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ComSIT Distribution GmbH

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ComSIT USA

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Dan-Mar Components

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Goldney Electronics S.L.

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Inventory MP

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LIBRA Elektronik GmbH

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Elcom Components

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Prism Electronics

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Ampacity Inc.

Singapore . 87,616 parts In-Stock

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Semicontronic

India . 78,925 parts In-Stock

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Modulus Dynamics

Lithuania . 23,471 parts In-Stock

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Corohmni

South Africa . 811 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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Argo Parts USA

USA . 1,122 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Component Stockers USA

USA . 12 parts In-Stock

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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Eastek

USA . 939,000 parts In-Stock

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GlobX GmbH

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Perfect Parts

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Glotronic Ltd.

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Kepictronics

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Authorized Procurement Solutions

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Robosynatics

Brazil . 13,918 parts In-Stock

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Lucentia Tech

USA . 13,918 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,395 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Diodes Incorporated with the BC846BW-7-F small signal bipolar junction transistor. As a leading manufacturer, Diodes Incorporated ensures top-notch performance in every product. The BC846BW-7-F is perfect for switching applications, offering seamless functionality and versatility. With its NPN polarity and compact rectangular package shape, this surface-mount transistor is designed to meet your needs. Benefit from its maximum collector-emitter voltage of 65V and impressive power dissipation of 0.2W. Discover the value and advantages that the BC846BW-7-F brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that ensures reliability in various environments.

Polarity or Channel Type: NPN

Commonly used type for general purpose amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed for efficient switching operations.

Surface Mount: YES

Provides easy integration onto circuit boards.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low power applications.

Minimum DC Current Gain (hFE): 200

High current gain for improved performance.

Maximum Operating Temperature: 150 °C

Can operate in a wide temperature range.

Maximum Collector-Emitter Voltage: 65 V

Allows for high voltage handling capabilities.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels.

Nominal Transition Frequency (fT): 300 MHz

Ideal for high frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846BW-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC846BW-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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