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PN2222ABU

Onsemi

PN2222ABU by Onsemi

PN2222ABU by Onsemi is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 40 and fast turn on/off times (ton: 35ns, toff: 285ns).

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$0.110

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1k+

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Arrow

USA . 7,488 parts In-Stock

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$0.178

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Newark

USA . 1,159 parts In-Stock

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$0.078

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1,159

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DigiKey

USA . 81,578 parts In-Stock

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$0.300

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$0.115

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$0.075

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$0.052

81,578

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$0.052

Mouser Electronics

USA . 30,560 parts In-Stock

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Adafruit Industries

USA . 600 parts In-Stock

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$0.750

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$0.683

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Future Electronics

Canada . 140,000 parts In-Stock

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Master Electronics

USA . 118,202 parts In-Stock

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Verical

USA . 117,000 parts In-Stock

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Rochester

USA . 111,540 parts In-Stock

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Chip1Stop

Japan . 87,546 parts In-Stock

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Element14

Singapore . 4,107 parts In-Stock

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Farnell

UK . 3,847 parts In-Stock

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Digiode

USA . 1,361 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Component Electronics Inc.

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TME

Poland . 2,885 parts In-Stock

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$0.098

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$0.064

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IBS Electronics

USA . 675,061 parts In-Stock

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NAC Semi

USA . 290,000 parts In-Stock

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Vyrian

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Sensible Micro Corp

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Chip Stock

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Jameco Electronics

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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Holdelec - ElecDif-Pro

France . 960 parts In-Stock

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Inventory MP

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Bristol Electronics

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Flip Electronics

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Diverse Electronics

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North Shore Components

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Speed Components Ltd

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Rapid Electronics

USA . 21 parts In-Stock

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Prism Electronics

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Ampacity Inc.

Singapore . 46,833 parts In-Stock

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Semicontronic

India . 45,449 parts In-Stock

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Corphita

USA . 1,491 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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Component Stockers USA

USA . 241,899 parts In-Stock

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Argo Parts USA

USA . 4,948 parts In-Stock

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$0.073

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Bastille Electronics

Australia . 50 parts In-Stock

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$0.076

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$0.072

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$0.069

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$0.068

50

$0.076

$0.072

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$0.068

Modulus Dynamics

Lithuania . 450 parts In-Stock

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$0.083

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$0.080

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$0.083

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Continental Prestige Electronics

USA . 8,236 parts In-Stock

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$0.379

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$0.147

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$0.061

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$0.045

8,236

$0.379

$0.147

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$0.045

Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.750

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$0.683

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$0.615

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$0.750

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Aztec Data Supply Inc.

USA . 1,048 parts In-Stock

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Perfect Parts

USA . 185,577 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

USA . 27,068 parts In-Stock

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Eastek

USA . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 9,887 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,512 parts In-Stock

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Kulean Microsystems

USA . 6,077 parts In-Stock

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TANS Electronics

Latvia . 3,876 parts In-Stock

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Robosynatics

Brazil . 3,000 parts In-Stock

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$4.993

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Lucentia Tech

USA . 3,000 parts In-Stock

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$4.993

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SupplyDigital Components

Austria . 2,103 parts In-Stock

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GreenTree Electronics

Israel . 1,944 parts In-Stock

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Supply Digital

USA . 1,694 parts In-Stock

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Problanco Electronics

Mexico . 929 parts In-Stock

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Kepictronics

USA . 146 parts In-Stock

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UHIMA Technologies

Türkiye . 65 parts In-Stock

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Overview

Discover the PN2222ABU by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers exceptional performance and reliability. Its plastic/epoxy package ensures durability and easy installation. With a maximum collector-emitter voltage of 40V and a maximum collector current of 1A, this transistor is perfect for a wide range of electronic projects. Whether you're a hobbyist or a professional, the PN2222ABU provides incredible value, benefits, and advantages that will elevate your designs to new heights. Explore the possibilities today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type

NPN - The NPN configuration allows for better signal amplification and low power consumption, making it an efficient choice for switching applications.

Configuration

SINGLE - The single configuration simplifies the circuit design and improves overall reliability and stability.

Transistor Application

SWITCHING - Designed specifically for switching purposes, this transistor offers fast and efficient switching capabilities, making it ideal for applications that require quick response times.

Package Shape

ROUND - The round shape allows for easy installation and enhances heat dissipation, ensuring optimal performance and reliability.

Terminal Form

THROUGH-HOLE - The through-hole terminals allow for secure and reliable connections, making it convenient for manual installation and maintenance.

No. of Elements

1 - With a single element, this transistor provides a compact and simple solution for small signal applications.

No. of Terminals

3 - The 3 terminals enable easy integration into circuitry, offering versatile options for connectivity.

Maximum Power Dissipation (Abs)

0.625 W - With a high power dissipation capability, this transistor can handle significant amounts of power, ensuring reliable operation even under demanding conditions.

Package Style (Meter)

CYLINDRICAL - The cylindrical package style offers efficient space utilization and allows for easy integration into electronic systems.

Minimum DC Current Gain (hFE)

40 - With a minimum DC current gain of 40, this transistor ensures reliable amplification of weak signals, making it suitable for low-power applications.

Maximum Operating Temperature

150 °C - The high maximum operating temperature enables the transistor to withstand elevated temperatures, making it suitable for various environments and applications.

Maximum Collector-Emitter Voltage

40 V - With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, ensuring reliable performance in voltage-sensitive circuits.

Transistor Element Material

SILICON - The use of silicon as the transistor element material provides excellent electrical properties and enhances overall performance.

Maximum Turn On Time (ton)

35 ns - With a fast turn-on time, this transistor ensures quick response and reduced power losses during switching operations.

Maximum Collector Current (IC)

1 A - The high maximum collector current rating allows for handling higher current loads, making it suitable for heavy-duty applications.

Maximum Turn Off Time (toff)

285 ns - The fast turn-off time of this transistor minimizes switching losses and enhances overall efficiency.

Terminal Finish

MATTE TIN - The matte tin terminal finish provides improved solderability and corrosion resistance, ensuring reliable and durable connections.

Terminal Position

BOTTOM - The bottom terminal position simplifies PCB layout and facilitates efficient heat dissipation.

Nominal Transition Frequency (fT)

300 MHz - With a high nominal transition frequency, this transistor allows for efficient amplification and switching of high-frequency signals, making it suitable for radio and telecommunications applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222ABU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222ABU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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