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PN2222ATF

Onsemi

PN2222ATF by Onsemi

PN2222ATF by Onsemi is a NPN BJT transistor with 40V VCEO, 1A IC, and 300MHz fT. Ideal for switching applications, it has a max power dissipation of 0.625W and operates up to 150°C. Its through-hole package makes it suitable for various electronic designs.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14,617 parts In-Stock

1+ parts

$0.174

100+ parts

$0.065

1k+ parts

$0.061

10k+ parts

$0.059

14,617

$0.174

$0.065

$0.061

$0.059

Mouser Electronics

USA . 15,945 parts In-Stock

1+ parts

$0.320

100+ parts

$0.123

1k+ parts

$0.080

10k+ parts

$0.067

15,945

$0.320

$0.123

$0.080

$0.067

Newark

USA . 4,319 parts In-Stock

1+ parts

$0.334

100+ parts

$0.137

1k+ parts

$0.105

10k+ parts

-

4,319

$0.334

$0.137

$0.105

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Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$0.718

100+ parts

$0.682

1k+ parts

$0.682

10k+ parts

-

500

$0.718

$0.682

$0.682

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Verical

USA . 26,000 parts In-Stock

1+ parts

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$0.079

26,000

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-

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$0.079

Master Electronics

USA . 26,000 parts In-Stock

1+ parts

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$0.067

26,000

-

-

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$0.067

Element14

Singapore . 13,458 parts In-Stock

1+ parts

-

100+ parts

$0.145

1k+ parts

$0.065

10k+ parts

$0.064

13,458

-

$0.145

$0.065

$0.064

RS (Exports)

UK . 7,140 parts In-Stock

1+ parts

-

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$0.045

7,140

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$0.045

Future Electronics

Canada . 6,000 parts In-Stock

1+ parts

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$0.038

6,000

-

-

-

$0.038

DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

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$0.060

6,000

-

-

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$0.060

EBV Elektronik

Germany . 6,000 parts In-Stock

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6,000

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Chip1Stop

Japan . 2,000 parts In-Stock

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$0.051

2,000

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-

-

$0.051

Rochester

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.051

1k+ parts

$0.042

10k+ parts

$0.038

50

-

$0.051

$0.042

$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,442 parts In-Stock

1+ parts

$0.040

100+ parts

-

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-

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2,442

$0.040

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.075

100+ parts

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100

$0.075

-

-

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TME

Poland . 179 parts In-Stock

1+ parts

$0.290

100+ parts

$0.107

1k+ parts

$0.072

10k+ parts

$0.056

179

$0.290

$0.107

$0.072

$0.056

IBS Electronics

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

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$0.050

42,000

-

-

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$0.050

Vyrian

USA . 18,260 parts In-Stock

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18,260

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Cyclops Electronics Ltd

UK . 10,050 parts In-Stock

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10,050

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

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$0.095

4,000

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-

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$0.095

Microfarads

USA . 3,780 parts In-Stock

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3,780

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.094

1k+ parts

$0.056

10k+ parts

$0.037

3,000

-

$0.094

$0.056

$0.037

Semi Source

USA . 1,549 parts In-Stock

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1,549

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 16,565 parts In-Stock

1+ parts

$0.033

100+ parts

-

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16,565

$0.033

-

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Semicontronic

India . 15,822 parts In-Stock

1+ parts

$0.033

100+ parts

$0.032

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$0.032

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15,822

$0.033

$0.032

$0.032

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Corphita

USA . 3,288 parts In-Stock

1+ parts

$0.038

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3,288

$0.038

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Corohmni

South Africa . 271 parts In-Stock

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$0.039

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271

$0.039

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Component Stockers USA

USA . 2,002 parts In-Stock

1+ parts

$0.040

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$0.040

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$0.040

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2,002

$0.040

$0.040

$0.040

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Argo Parts USA

USA . 876 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

876

$0.071

-

-

$0.069

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.718

100+ parts

$0.682

1k+ parts

$0.682

10k+ parts

-

500

$0.718

$0.682

$0.682

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Aztec Data Supply Inc.

USA . 4,013 parts In-Stock

1+ parts

$1.432

100+ parts

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4,013

$1.432

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 41,160 parts In-Stock

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41,160

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QUARKTWIN TECHNOLOGY LTD

USA . 22,376 parts In-Stock

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22,376

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Allen Electronics Distributors

USA . 9,600 parts In-Stock

1+ parts

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$0.047

10k+ parts

$0.024

9,600

-

-

$0.047

$0.024

Glotronic Ltd.

UK . 9,600 parts In-Stock

1+ parts

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9,600

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Problanco Electronics

Mexico . 7,299 parts In-Stock

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7,299

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TANS Electronics

Latvia . 5,898 parts In-Stock

1+ parts

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5,898

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SupplyDigital Components

Austria . 5,249 parts In-Stock

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5,249

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Kulean Microsystems

USA . 4,995 parts In-Stock

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4,995

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.074

1k+ parts

$0.071

10k+ parts

$0.070

2,000

-

$0.074

$0.071

$0.070

Robosynatics

Brazil . 350 parts In-Stock

1+ parts

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100+ parts

$0.380

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$0.380

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$0.380

350

-

$0.380

$0.380

$0.380

Lucentia Tech

USA . 350 parts In-Stock

1+ parts

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100+ parts

$0.380

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$0.380

10k+ parts

$0.380

350

-

$0.380

$0.380

$0.380

UHIMA Technologies

Türkiye . 260 parts In-Stock

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260

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Supply Digital

USA . 107 parts In-Stock

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107

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Overview

Discover the high-quality PN2222ATF by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor that guarantees reliability and efficiency. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 0.625 W and a maximum collector-emitter voltage of 40 V, this product offers unmatched performance and durability. Whether you're looking to optimize your electronic circuits or enhance your projects, the PN2222ATF provides the value and benefits you need to succeed. Upgrade your designs today with this innovative solution from Onsemi!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration with other NPN components in a circuit.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient operation in switching circuits.

Package Shape: ROUND

Round package shape provides uniform stress distribution and easy mounting.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and easy soldering.

No. of Terminals: 3

Three terminals allow for easy connection in a circuit.

Maximum Power Dissipation (Abs): 0.625 W

High maximum power dissipation allows the transistor to handle higher power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides efficient heat dissipation and compact size.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain of 40 ensures reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage of 40V allows for operation in circuits with higher voltages.

Transistor Element Material: SILICON

Silicon material provides good reliability and high performance for the transistor element.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time of 35 nanoseconds ensures quick response in switching applications.

Maximum Collector Current (IC): 1 A

High maximum collector current of 1A allows for handling higher currents in the circuit.

Maximum Turn Off Time (toff): 285 ns

Relatively fast turn-off time of 285 nanoseconds ensures efficient switching operations.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency of 300 MHz allows for high-frequency signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222ATF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222ATF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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