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PN2222ATA

Onsemi

PN2222ATA by Onsemi

PN2222ATA by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 1A, and min. DC current gain of 40. It is used for switching applications due to its single configuration and cylindrical package style suitable for through-hole mounting. With a max operating temperature of 150°C, it offers fast turn-on/off times (35ns/285ns) and a nominal transition frequency of 300MHz.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

30

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1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 26,198 parts In-Stock

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$0.310

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$0.118

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$0.080

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$0.065

26,198

$0.310

$0.118

$0.080

$0.065

Adafruit Industries

USA . 100 parts In-Stock

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$1.008

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$0.958

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$1.008

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Rochester

USA . 604,775 parts In-Stock

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$0.051

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$0.042

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$0.038

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Verical

USA . 508,350 parts In-Stock

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Flip Electronics (Authorized)

USA . 322,000 parts In-Stock

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DigiKey

USA . 14,000 parts In-Stock

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Master Electronics

USA . 14,000 parts In-Stock

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Arrow

USA . 8,000 parts In-Stock

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Chip1Stop

Japan . 8,000 parts In-Stock

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Farnell

UK . 3,285 parts In-Stock

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$0.101

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$0.065

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$0.101

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Element14

Singapore . 3,285 parts In-Stock

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$0.162

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$0.105

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RS (Exports)

UK . 2,910 parts In-Stock

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Newark

USA . 2,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 892 parts In-Stock

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Nova Conductors

Japan . 49 parts In-Stock

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TME

Poland . 417 parts In-Stock

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$0.280

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$0.113

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$0.071

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$0.055

417

$0.280

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$0.071

$0.055

Flip Electronics

USA . 352,000 parts In-Stock

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Vyrian

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IBS Electronics

USA . 22,000 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,400 parts In-Stock

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Semtec, LLC

USA . 4,690 parts In-Stock

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Schukat

Germany . 4,400 parts In-Stock

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$0.063

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$0.042

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Bristol Electronics

USA . 3,949 parts In-Stock

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Inventory MP

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Chip Stock

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Cyclops Electronics Ltd

UK . 670 parts In-Stock

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Atlantic Semiconductor

USA . 500 parts In-Stock

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LWI Electronics Inc

India . 55 parts In-Stock

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LittleDiode

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Semicontronic

India . 143,612 parts In-Stock

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Ampacity Inc.

Singapore . 135,513 parts In-Stock

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Corohmni

South Africa . 303 parts In-Stock

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Corphita

USA . 1,450 parts In-Stock

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Argo Parts USA

USA . 4,534 parts In-Stock

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$0.080

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$0.078

4,534

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.008

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$0.958

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$0.958

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100

$1.008

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Continental Prestige Electronics

USA . 602,000 parts In-Stock

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Perfect Parts

USA . 135,927 parts In-Stock

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Metaverse IC Inc.

Canada . 100,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,005 parts In-Stock

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Authorized Procurement Solutions

USA . 18,000 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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SupplyDigital Components

Austria . 4,247 parts In-Stock

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TANS Electronics

Latvia . 3,664 parts In-Stock

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Kulean Microsystems

USA . 2,562 parts In-Stock

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Allen Electronics Distributors

USA . 1,400 parts In-Stock

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Formix International (Excess)

India . 1,268 parts In-Stock

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Assy Fe

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UHIMA Technologies

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Supply Digital

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Problanco Electronics

Mexico . 307 parts In-Stock

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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Overview

Discover the PN2222ATA by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that delivers exceptional performance in switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and efficiency. With a maximum power dissipation of 0.625 W and a maximum collector-emitter voltage of 40 V, this transistor is perfect for a wide range of electronic projects. Whether you're a hobbyist or a professional, the PN2222ATA provides the value, benefits, and advantages you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides good insulation and durability, making it suitable for a variety of applications.

Polarity or Channel Type

NPN - NPN transistors are commonly used in amplification and switching circuits, allowing for versatile functionality.

Configuration

SINGLE - Single configuration makes the transistor easy to connect in circuits, simplifying design and assembly processes.

Transistor Application

SWITCHING - Designed specifically for switching applications, ensuring fast and efficient operation.

Package Shape

ROUND - Round package shape allows for easy mounting and integration into circuits.

Terminal Form

THROUGH-HOLE - Through-hole terminals provide secure connections and easy soldering, ensuring reliability in use.

No. of Terminals

3 - Three terminals simplify circuit connections and make it easy to control the transistor's operation.

Maximum Power Dissipation (Abs)

0.625 W - With a maximum power dissipation of 0.625 W, this transistor can handle moderate power loads effectively.

Package Style (Meter)

CYLINDRICAL - Cylindrical package style provides a compact form factor and easy mounting options.

Minimum DC Current Gain (hFE)

40 - A minimum DC current gain of 40 ensures consistent and reliable amplification of signals.

Maximum Operating Temperature

150 °C - With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage

40 V - A maximum collector-emitter voltage of 40 V allows for safe and reliable operation in various circuits.

Transistor Element Material

SILICON - Silicon material offers high performance and reliability, making this transistor a durable choice.

Maximum Turn On Time (ton)

35 ns - With a maximum turn on time of 35 ns, this transistor provides fast switching speeds for efficient operation.

Maximum Collector Current (IC)

1 A - A maximum collector current of 1 A allows for handling moderate current loads with ease.

Maximum Turn Off Time (toff)

285 ns - With a maximum turn off time of 285 ns, this transistor ensures quick and efficient switching between on and off states.

Terminal Finish

MATTE TIN - Matte tin finish on terminals provides good conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position

BOTTOM - Bottom terminal position simplifies circuit layout and connections, making installation and assembly easier.

Nominal Transition Frequency (fT)

300 MHz - With a nominal transition frequency of 300 MHz, this transistor is suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222ATA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222ATA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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