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PN2222ATFR

Onsemi

PN2222ATFR by Onsemi

PN2222ATFR by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V and max. collector current of 1A. With a min. DC current gain of 40, it's ideal for switching applications with a max. power dissipation of 0.625W. Its package style is cylindrical, making it suitable for through-hole mounting in various electronic circuits.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,491 parts In-Stock

1+ parts

$0.300

100+ parts

$0.115

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$0.075

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$0.060

9,491

$0.300

$0.115

$0.075

$0.060

DigiKey

USA . 7,440 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.074

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7,440

$0.300

$0.114

$0.074

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Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.546

100+ parts

$1.469

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$1.469

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100

$1.546

$1.469

$1.469

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Future Electronics

Canada . 530,000 parts In-Stock

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$0.036

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$0.036

Verical

USA . 40,000 parts In-Stock

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$0.055

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Master Electronics

USA . 40,000 parts In-Stock

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$0.046

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Chip1Stop

Japan . 28,000 parts In-Stock

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$0.041

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Farnell

UK . 17,414 parts In-Stock

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-

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$0.084

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$0.061

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$0.036

17,414

-

$0.084

$0.061

$0.036

Element14

Singapore . 17,414 parts In-Stock

1+ parts

-

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$0.143

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$0.062

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$0.061

17,414

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$0.143

$0.062

$0.061

EBV Elektronik

Germany . 16,000 parts In-Stock

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RS (Exports)

UK . 8,000 parts In-Stock

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$0.040

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Newark

USA . 2,000 parts In-Stock

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Arrow

USA . 2,000 parts In-Stock

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$0.042

2,000

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$0.042

Rochester

USA . 1,848 parts In-Stock

1+ parts

-

100+ parts

$0.046

1k+ parts

$0.038

10k+ parts

$0.034

1,848

-

$0.046

$0.038

$0.034

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,960 parts In-Stock

1+ parts

$0.036

100+ parts

-

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2,960

$0.036

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Nova Conductors

Japan . 300 parts In-Stock

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$0.077

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300

$0.077

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IBS Electronics

USA . 258,507 parts In-Stock

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$0.372

100+ parts

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$0.077

258,507

$0.372

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$0.077

NAC Semi

USA . 594,000 parts In-Stock

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$0.096

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$0.096

Chip Stock

USA . 71,000 parts In-Stock

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Vyrian

USA . 14,487 parts In-Stock

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Classic Components Corporation

USA . 4,000 parts In-Stock

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Bristol Electronics

USA . 2,015 parts In-Stock

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Atlantic Semiconductor

USA . 2,015 parts In-Stock

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Cyclops Electronics Ltd

UK . 691 parts In-Stock

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691

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Distributors (Availability)

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Semicontronic

India . 14,076 parts In-Stock

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$0.027

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$0.026

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14,076

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Ampacity Inc.

Singapore . 13,980 parts In-Stock

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$0.027

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Corohmni

South Africa . 185 parts In-Stock

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$0.033

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Corphita

USA . 1,673 parts In-Stock

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Argo Parts USA

USA . 327 parts In-Stock

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327

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Netroflash

USA . 1,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,792 parts In-Stock

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$0.322

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2,792

$0.322

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Continental Prestige Electronics

USA . 46,035 parts In-Stock

1+ parts

$0.360

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$0.134

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$0.047

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$0.044

46,035

$0.360

$0.134

$0.047

$0.044

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.546

100+ parts

$1.469

1k+ parts

$1.469

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100

$1.546

$1.469

$1.469

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Modulus Dynamics

Lithuania . 7,422 parts In-Stock

1+ parts

$1.903

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$1.903

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$1.903

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7,422

$1.903

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Perfect Parts

USA . 179,743 parts In-Stock

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Eastek

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 7,821 parts In-Stock

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7,821

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SupplyDigital Components

Austria . 6,594 parts In-Stock

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6,594

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Allen Electronics Distributors

USA . 5,000 parts In-Stock

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$0.067

1k+ parts

$0.043

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$0.028

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$0.067

$0.043

$0.028

TANS Electronics

Latvia . 3,475 parts In-Stock

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3,475

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Problanco Electronics

Mexico . 2,613 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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$2.055

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$2.055

900

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$2.055

$2.055

Lucentia Tech

USA . 900 parts In-Stock

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$2.055

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$2.055

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$2.055

900

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$2.055

UHIMA Technologies

Türkiye . 420 parts In-Stock

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Supply Digital

USA . 269 parts In-Stock

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Overview

Enhance your electronic projects with the PN2222ATFR by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for switching applications and offers a maximum collector-emitter voltage of 40V and a maximum operating temperature of 150°C. With a minimum DC current gain of 40 and a maximum collector current of 1A, this transistor provides excellent value and efficiency for your projects. Upgrade your designs with the PN2222ATFR and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides good insulation and durability, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN type components, enhancing compatibility and flexibility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making the transistor easy to use for various switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast turn-on and turn-off times, making it efficient for control and automation systems.

Package Shape: ROUND

Round package shape allows for easy mounting and soldering, making it suitable for compact electronic devices.

No. of Terminals: 3

Having 3 terminals provides necessary connections for base, collector, and emitter, enabling proper functioning in a circuit.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring reliability in demanding conditions.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy handling and installation, making it a convenient choice for various electronic applications.

Minimum DC Current Gain (hFE): 40

Having a minimum DC current gain of 40 ensures stable amplification and switching performance, making the transistor suitable for different signal processing tasks.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate in harsh environments without performance degradation, ensuring reliable operation over a wide temperature range.

Maximum Collector-Emitter Voltage: 40 V

With a high collector-emitter voltage rating, this transistor can withstand high voltage levels, making it suitable for applications requiring voltage switching and control.

Transistor Element Material: SILICON

Utilizing silicon as the transistor element material offers high reliability and performance, making the transistor ideal for various electronic applications.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time enables quick response in switching operations, enhancing efficiency and performance in time-critical applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the transistor to function in cold environments without issues, providing reliable operation in diverse temperature conditions.

Maximum Collector Current (IC): 1 A

Having a high collector current rating of 1A allows the transistor to handle high current loads, making it suitable for power control and switching applications.

Maximum Turn Off Time (toff): 285 ns

With a maximum turn-off time of 285 ns, this transistor ensures fast switching transitions, reducing delay and improving overall circuit performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections and longevity in various electronic assemblies.

Terminal Position: BOTTOM

Having the terminals at the bottom simplifies PCB layout and soldering, making it easy to integrate the transistor into different electronic designs.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency allows the transistor to handle high-frequency signals with minimal distortion, making it suitable for high-speed applications requiring signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222ATFR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222ATFR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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