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BC847CLT1G

Onsemi

BC847CLT1G by Onsemi

BC847CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

43

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 677 parts In-Stock

1+ parts

$0.120

100+ parts

$0.045

1k+ parts

$0.028

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$0.019

677

$0.120

$0.045

$0.028

$0.019

Newark

USA . 11,412 parts In-Stock

1+ parts

$0.124

100+ parts

$0.048

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$0.032

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11,412

$0.124

$0.048

$0.032

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Mouser Electronics

USA . 11,358 parts In-Stock

1+ parts

$0.230

100+ parts

$0.051

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$0.034

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$0.026

11,358

$0.230

$0.051

$0.034

$0.026

Arrow

USA . 3,834,000 parts In-Stock

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Verical

USA . 3,834,000 parts In-Stock

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Rochester

USA . 1,024,560 parts In-Stock

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Flip Electronics (Authorized)

USA . 809,915 parts In-Stock

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EBV Elektronik

Germany . 642,000 parts In-Stock

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Chip1Stop

Japan . 258,000 parts In-Stock

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Master Electronics

USA . 78,000 parts In-Stock

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Farnell

UK . 38,251 parts In-Stock

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Element14

Singapore . 890 parts In-Stock

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890

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Distributors (In-Stock)

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Digiode

USA . 497 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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$0.095

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$0.095

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TME

Poland . 3,168 parts In-Stock

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$0.027

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3,168

$0.100

$0.044

$0.027

$0.016

Bristol Electronics

USA . 3,389 parts In-Stock

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$0.113

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$0.056

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3,389

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Ozdisan Elektronik

Türkiye . 294 parts In-Stock

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$62.731

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294

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NAC Semi

USA . 993,000 parts In-Stock

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Flip Electronics

USA . 824,915 parts In-Stock

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IBS Electronics

USA . 495,000 parts In-Stock

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Vyrian

USA . 383,520 parts In-Stock

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Chip Stock

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Classic Components Corporation

USA . 108,000 parts In-Stock

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Electro Sonic

Canada . 102,000 parts In-Stock

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VNN

France . 33,123 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 18,554 parts In-Stock

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Schukat

Germany . 16,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 12,579 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Sensible Micro Corp

USA . 7,578 parts In-Stock

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Elcom Components

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Speed Components Ltd

Israel . 2,952 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

USA . 2,849 parts In-Stock

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A2Z Electronics, Inc.

USA . 2,152 parts In-Stock

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LWI Electronics Inc

India . 2,000 parts In-Stock

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Connector Distribution Corp

USA . 1,710 parts In-Stock

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Right Parts Inc.

USA . 1,710 parts In-Stock

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Prism Electronics

USA . 1,696 parts In-Stock

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Microfarads

USA . 1,644 parts In-Stock

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NPI Materials, Inc.

USA . 760 parts In-Stock

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Sea View Technologies

USA . 250 parts In-Stock

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Semicontronic

India . 444,253 parts In-Stock

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Ampacity Inc.

Singapore . 328,083 parts In-Stock

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Component Stockers USA

USA . 1,901,302 parts In-Stock

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Corohmni

South Africa . 74 parts In-Stock

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Corphita

USA . 719 parts In-Stock

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Modulus Dynamics

Lithuania . 22,470 parts In-Stock

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Argo Parts USA

USA . 682 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.093

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Aztec Data Supply Inc.

USA . 2,689 parts In-Stock

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$1.496

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Perfect Parts

USA . 5,219,694 parts In-Stock

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Authorized Procurement Solutions

USA . 1,704,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,182,960 parts In-Stock

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Glotronic Ltd.

UK . 791,700 parts In-Stock

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CPlus Electronics

USA . 357,000 parts In-Stock

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GreenTree Electronics

Israel . 162,000 parts In-Stock

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Eastek

USA . 69,000 parts In-Stock

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Kepictronics

USA . 67,140 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Robosynatics

Brazil . 20,840 parts In-Stock

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Lucentia Tech

USA . 20,840 parts In-Stock

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Lixinc

USA . 18,422 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,265 parts In-Stock

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Kulean Microsystems

USA . 6,856 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,640 parts In-Stock

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Assy Fe

Spain . 1,826 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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SupplyDigital Components

Austria . 1,177 parts In-Stock

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Problanco Electronics

Mexico . 620 parts In-Stock

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TANS Electronics

Latvia . 569 parts In-Stock

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Formix International (Excess)

India . 355 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Enhance your electronic projects with the BC847CLT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for a variety of applications requiring low power dissipation and high DC current gain. With a maximum VCEsat of 0.6V and a minimum hFE of 420, this transistor provides great value and benefits to customers looking for efficiency and precision in their designs. Upgrade your circuits today with the BC847CLT1G and experience the advantages of top-notch performance and quality craftsmanship.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective, making it suitable for compact and budget-friendly electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and reliability.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuit designs, simplifying the overall circuit layout and reducing complexity.

Surface Mount: YES

Surface mount transistors are space-saving and offer better thermal performance, making them ideal for densely populated PCB designs.

Maximum VCEsat: 0.6 V

The low maximum VCEsat value indicates high efficiency and minimal power loss in the transistor, improving overall performance.

Package Shape: RECTANGULAR

Rectangular package shapes are easy to handle and mount on PCBs, providing good mechanical stability and reliability.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuits, providing flexibility and compatibility with various electronic designs.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation rating ensures the transistor can handle moderate power loads without overheating, improving product longevity.

Package Style (Meter): SMALL OUTLINE

Small outline packages save space on the PCB and offer better thermal performance, making them suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 420

A high minimum DC current gain ensures consistent and reliable amplification performance in the transistor, making it suitable for signal amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures without performance degradation, ensuring reliability in various conditions.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes signal distortions and improves high-frequency performance in the transistor, making it suitable for high-speed applications.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltages safely, increasing versatility in circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, temperature stability, and consistent performance, making them suitable for a wide range of electronic applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the transistor can function in extreme cold environments without performance issues, increasing product reliability.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows the transistor to handle moderate current levels, making it suitable for low to medium-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in various environments.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layouts and soldering options, allowing for easy integration into different PCB designs.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures safe and efficient soldering processes, preventing damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating of 260°C allows for reliable and robust soldering processes, ensuring stable connections in demanding environments.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency indicates fast response and high-frequency performance in the transistor, making it suitable for high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847CLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC847CLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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