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ULN2803LW

Vishay Intertechnology

ULN2803LW by Vishay Intertechnology

Vishay Intertechnology's ULN2803LW is an NPN BJT transistor with 8 elements and 18 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and operates b/w -20 to 85°C. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.

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Digital Electronic Gebert Verwaltungs UG

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ComSIT USA

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A2Z Electronics, Inc.

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Nova Conductors

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Manoshevitz Elec. Sales

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Vectronix, Inc

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North Shore Components

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Beltway Electronics Company

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Zilex Electronics Inc.

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ECAB

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J & M Industries LLC

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Semtec, LLC

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Classic Components Corporation

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Rebound Electronics

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Carlin Systems, Inc.

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Corohmni

South Africa . 374 parts In-Stock

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Aztec Data Supply Inc.

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Semicontronic

India . 202 parts In-Stock

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AZTECH Wire

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Ampacity Inc.

Singapore . 1,008 parts In-Stock

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Overview

Enhance your electronic projects with the Vishay Intertechnology ULN2803LW Small Signal Bipolar Junction Transistor. Manufactured with top-notch quality and expertise, this complex NPN transistor is perfect for switching applications. With its surface mount design and maximum collector-emitter voltage of 50V, this product offers unmatched reliability and performance. Whether you're a hobbyist or professional, the ULN2803LW provides exceptional value, benefits, and advantages that will elevate your projects to the next level. Upgrade your electronics today with Vishay Intertechnology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: NPN

Commonly used type of BJT for many applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient for such tasks.

Surface Mount: YES

Can be easily mounted onto a PCB, saving space and providing increased reliability.

Maximum VCEsat: 1.6 V

Low saturation voltage helps in reducing power dissipation and improving efficiency.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications where higher voltages are required without causing damage to the transistor.

No. of Elements: 8

Provides versatility and flexibility in circuit design.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels for various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2803LW attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Vishay Intertechnology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JESD-30 Code:

R-PDSO-G18

No. of Elements:

8

No. of Terminals:

18

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2803LW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-01-454-3321, 5962014543321

NIIN

014543321

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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