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ULN2004AD

Texas Instruments

ULN2004AD by Texas Instruments

ULN2004AD by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications in surface mount designs due to its complex configuration and small outline package style.

Median Price

$0.624

Lifecycle Status

Suppliers In-Stock

44

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1 parts In-Stock

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$0.288

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$0.288

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Adafruit Industries

USA . 40 parts In-Stock

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$0.499

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$0.474

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$0.499

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Chip1Stop

Japan . 1 parts In-Stock

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$0.624

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Mouser Electronics

USA . 13,633 parts In-Stock

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$0.452

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$0.386

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RS (Exports)

UK . 165 parts In-Stock

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$1.061

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$0.893

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$0.764

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$1.061

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Rochester

USA . 3,410 parts In-Stock

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$0.643

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Verical

USA . 3,410 parts In-Stock

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$0.595

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DigiKey

USA . 2,500 parts In-Stock

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Avnet

USA . 1,552 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 649 parts In-Stock

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TME

Poland . 1,897 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ace Electronics

USA . 141 parts In-Stock

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Chip Stock

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Kruse Electronics AG

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Schukat

Germany . 4,660 parts In-Stock

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$0.305

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Vyrian

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Bristol Electronics

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Atlantic Semiconductor

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Halfin

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Speed Components Ltd

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Micros

Poland . 500 parts In-Stock

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ECAB

Sweden . 309 parts In-Stock

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Zilex Electronics Inc.

Canada . 144 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 135 parts In-Stock

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Cogito LLC

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Holdelec - ElecDif-Pro

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Semtec, LLC

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Cyclops Electronics Ltd

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Connector Distribution Corp

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Right Parts Inc.

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Pegasus Components GmbH

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ComSIT Distribution GmbH

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ComSIT USA

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Whistler Technology

UK . 30 parts In-Stock

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Manotoh

Italy . 22 parts In-Stock

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MISTER SPROCKETS

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Huijzer Components

Netherlands . 10 parts In-Stock

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Semi Source

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Prism Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,871 parts In-Stock

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$0.147

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$0.147

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Semicontronic

India . 2,615 parts In-Stock

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$0.320

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$0.312

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$0.310

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Corphita

USA . 1,456 parts In-Stock

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$0.340

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$0.340

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Component Stockers USA

USA . 30,628 parts In-Stock

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$0.400

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$0.410

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$0.370

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$0.380

30,628

$0.400

$0.410

$0.370

$0.380

Argo Parts USA

USA . 2,461 parts In-Stock

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$0.458

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$0.444

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$0.458

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$0.444

Corohmni

South Africa . 111 parts In-Stock

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$0.484

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$0.484

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.499

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$0.474

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$0.474

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$0.499

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Continental Prestige Electronics

USA . 923 parts In-Stock

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$0.667

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$0.313

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$0.227

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923

$0.667

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Parana Technologies

USA . 1,743 parts In-Stock

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$1.481

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$2.158

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$1.481

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$2.158

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DigiPath Technology Company

USA . 2,237 parts In-Stock

1+ parts

$1.631

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$1.500

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$1.631

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ChromeModa Solutions

Germany . 6,563 parts In-Stock

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$1.664

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$1.364

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IDEA Electronic Components Group

UK . 1,870 parts In-Stock

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$1.664

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$1.498

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$1.664

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Microchip USA

USA . 1,891 parts In-Stock

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$10.820

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$10.750

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$10.720

10k+ parts

$10.690

1,891

$10.820

$10.750

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$10.690

Perfect Parts

USA . 87,667 parts In-Stock

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87,667

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Kepictronics

USA . 3,790 parts In-Stock

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GreenTree Electronics

Israel . 2,505 parts In-Stock

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Allen Electronics Distributors

USA . 680 parts In-Stock

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$0.302

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$0.221

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680

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$0.302

$0.221

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Assy Fe

Spain . 278 parts In-Stock

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278

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Cyclops Electronics Ltd (Excess)

UK . 254 parts In-Stock

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254

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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200

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Overview

Upgrade your electronic projects with the ULN2004AD by Texas Instruments. Known for their high-quality products, Texas Instruments manufactures this versatile small signal bipolar junction transistor for switching applications. With a maximum VCEsat of 1.6V and a maximum collector-emitter voltage of 50V, this transistor offers reliable performance. Its compact package shape and surface-mount capability make it easy to integrate into various designs. Trust Texas Instruments for top-notch components that deliver exceptional value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body provides durability and protection for the transistor, allowing for reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this product versatile for a wide range of circuit designs.

Configuration: COMPLEX

The complex configuration allows for more intricate circuit designs and functionality, making this transistor suitable for advanced electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for use in power supplies and other switching circuits.

Surface Mount: YES

The surface mount capability simplifies PCB assembly and allows for compact circuit designs, making this transistor perfect for space-constrained applications.

Maximum VCEsat: 1.6 V

With a low VCEsat value of 1.6V, this transistor exhibits minimal voltage drop when conducting, resulting in reduced power losses and improved efficiency in circuit operation.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration into the circuit layout, enabling efficient PCB design and layout optimization.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections on the PCB, ensuring stable electrical performance and consistent signal conductivity.

No. of Elements: 7

The transistor with 7 elements offers multiple functions and capabilities in a single component, simplifying circuit design and enabling versatile applications in electronic devices.

No. of Terminals: 16

With 16 terminals, this transistor provides ample connection options for various circuit configurations, offering flexibility in circuit design and integration.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves PCB space and allows for high-density mounting, making this transistor suitable for compact electronic devices and miniaturized applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum VCE voltage rating of 50V ensures reliable operation and protection against voltage spikes in the circuit, enhancing the product's robustness and durability.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and temperature stability, making this product a reliable choice for demanding electronic applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current rating of 0.5A, this transistor can handle moderate power levels and current loads, making it suitable for a wide range of low to medium power applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The nickel/palladium/gold terminal finish provides excellent conductivity, corrosion resistance, and solderability, ensuring long-term reliability and stable performance in diverse environmental conditions.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and ease of connection on the PCB, enabling flexible circuit layout and integration in electronic devices.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper solder melting and joint formation during the assembly process, guaranteeing robust and reliable connections for the transistor on the PCB.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2004AD attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2004AD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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