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BC846B,215

NXP Semiconductors

BC846B,215 by NXP Semiconductors

NXP Semiconductors' BC846B,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 200, it can handle IC up to 0.1A. Operating at 150°C max temp, it's ideal for small outline packages in surface mount configurations.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

50

In-Stock Inventory

1k+

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Bürklin Elektronik

Germany . 2,815 parts In-Stock

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$0.101

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$0.063

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$0.101

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EBV Elektronik

Germany . 11,325,000 parts In-Stock

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Verical

USA . 11,241,000 parts In-Stock

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TTI

USA . 1,269,000 parts In-Stock

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Element14

Singapore . 981,018 parts In-Stock

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Farnell

UK . 890,018 parts In-Stock

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UK . 379,700 parts In-Stock

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Elektronika Sales Private Limited

India . 240,000 parts In-Stock

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Rochester

USA . 300 parts In-Stock

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Chip1Stop

Japan . 21 parts In-Stock

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Electronics Source Co.

Thailand . 679,159 parts In-Stock

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Ozdisan Elektronik

Türkiye . 2,870 parts In-Stock

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Digiode

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Maritex

Poland . 45,387 parts In-Stock

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TME

Poland . 264,155 parts In-Stock

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Component Electronics Inc.

Canada . 128 parts In-Stock

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Nova Conductors

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NAC Semi

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ComSIT Distribution GmbH

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Rebound Electronics

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PC Components Company LLC

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Ampacity Inc.

Singapore . 1,223,144 parts In-Stock

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Corphita

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Argo Parts USA

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AZTECH Wire

Italy . 4,412 parts In-Stock

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Modulus Dynamics

Lithuania . 4,004 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Component Stockers USA

USA . 11,217,283 parts In-Stock

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Microchip USA

USA . 4,362 parts In-Stock

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Aztec Data Supply Inc.

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Perfect Parts

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Israel . 24,381,000 parts In-Stock

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iodParts Technologies Inc.

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Epart123

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Metaverse IC Inc.

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Brazil . 22,983 parts In-Stock

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Overview

Discover the BC846B,215 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a maximum VCEsat of 0.6V and a minimum DC Current Gain of 200, this NPN transistor offers reliable performance in a compact package. Ideal for a variety of electronic projects, this transistor provides exceptional value and efficiency, making it a must-have component for any circuit design. Trust NXP Semiconductors for superior quality and innovation in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for a variety of switching tasks.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in a variety of applications.

Transistor Application: SWITCHING

Designed specifically for switching tasks, making it efficient and reliable in those applications.

Maximum VCEsat: 0.6 V

Low VCEsat reduces power loss and improves efficiency in switching applications.

Surface Mount: YES

Surface mount capability allows for easy and compact integration into electronic circuits.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 200

High DC current gain allows for amplification and control of current in the circuit.

Maximum Collector-Emitter Voltage: 65 V

Can handle relatively high voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for low to medium power applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846B,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC846B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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