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BC817-40W,135

NXP Semiconductors

BC817-40W,135 by NXP Semiconductors

BC817-40W,135 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.7V and min hFE of 250. With a max IC of 0.5A and operating temperature of 150°C, it is ideal for small outline surface mount designs.

Median Price

$0.036

Lifecycle Status

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23

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1k+

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Chip1Stop

Japan . 9,750 parts In-Stock

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$0.027

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Adafruit Industries

USA . 270 parts In-Stock

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$0.045

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$0.043

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$0.045

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DigiKey

USA . 649 parts In-Stock

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$0.140

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$0.054

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$0.034

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$0.023

649

$0.140

$0.054

$0.034

$0.023

Mouser Electronics

USA . 2,555 parts In-Stock

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$0.180

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$0.061

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$0.039

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$0.026

2,555

$0.180

$0.061

$0.039

$0.026

EBV Elektronik

Germany . 140,000 parts In-Stock

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TTI

USA . 50,000 parts In-Stock

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Arrow

USA . 40,000 parts In-Stock

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Rochester

USA . 10,000 parts In-Stock

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$0.035

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$0.029

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$0.026

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$0.035

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Verical

USA . 9,750 parts In-Stock

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$0.037

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$0.025

9,750

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$0.025

Distributors (In-Stock)

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Digiode

USA . 935 parts In-Stock

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$0.043

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935

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Nova Conductors

Japan . 100 parts In-Stock

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Cyclops Electronics Ltd

UK . 910,000 parts In-Stock

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Chip Stock

USA . 70,000 parts In-Stock

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Kruse Electronics AG

Switzerland . 38,032 parts In-Stock

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Kruse

Germany . 38,032 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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$0.072

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$0.072

LIBRA Elektronik GmbH

Germany . 15,005 parts In-Stock

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ComSIT Distribution GmbH

Germany . 10,680 parts In-Stock

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ComSIT USA

USA . 10,680 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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Vyrian

USA . 6,250 parts In-Stock

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Anansix

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VNN

France . 792 parts In-Stock

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Ampacity Inc.

Singapore . 72,246 parts In-Stock

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$0.010

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Semicontronic

India . 68,065 parts In-Stock

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AZTECH Wire

Italy . 7,634 parts In-Stock

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Continental Prestige Electronics

USA . 6,729 parts In-Stock

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Argo Parts USA

USA . 172 parts In-Stock

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172

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Corphita

USA . 3,073 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Modulus Dynamics

Lithuania . 23,192 parts In-Stock

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Corohmni

South Africa . 797 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,860 parts In-Stock

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$0.672

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Perfect Parts

USA . 2,934,400 parts In-Stock

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Eastek

USA . 580,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,666 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Glotronic Ltd.

UK . 8,000 parts In-Stock

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UNI Independent Distributors

Spain . 6,417 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Robosynatics

Brazil . 100 parts In-Stock

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$19.139

Lucentia Tech

USA . 100 parts In-Stock

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$19.139

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$19.139

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$19.139

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$19.139

Overview

Discover the BC817-40W,135 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a maximum VCEsat of 0.7V and a minimum DC current gain of 250, this NPN transistor offers efficient performance in a compact package. Designed for surface mount installation, this transistor provides reliable operation with a maximum collector-emitter voltage of 45V and a maximum collector current of 0.5A. Trust NXP Semiconductors for cutting-edge technology and superior quality components that deliver value and reliability to your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection to the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for various switching purposes.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to use in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in switching circuits.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and reducing assembly time.

Maximum VCEsat: 0.7 V

Low VCE saturation voltage means lower power dissipation and improved efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and mount on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections for reliable performance.

No. of Terminals: 3

Simple 3-terminal design for easy connection in circuits.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation ensures long-term reliability and prevents overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs.

Minimum DC Current Gain (hFE): 250

High minimum DC current gain ensures consistent and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Maximum Collector-Base Capacitance: 5 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage provides ample headroom for voltage spikes in the circuit.

Transistor Element Material: SILICON

Silicon material ensures high reliability and performance of the transistor.

Maximum Collector Current (IC): 0.5 A

High maximum collector current allows for handling higher loads in the circuit.

Terminal Finish: TIN

Tin finish provides good conductivity for reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and soldering.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures safe soldering process without damaging the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering connections.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817-40W,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC817-40W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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