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BC817-40W,115

NXP Semiconductors

BC817-40W,115 by NXP Semiconductors

NXP Semiconductors' BC817-40W,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 250, it can handle IC up to 0.5A. Operating at 150°C max temp, it has a transition frequency of 100MHz making it suitable for high-speed switching circuits.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

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DigiKey

USA . 108 parts In-Stock

1+ parts

$0.140

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$0.054

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$0.034

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$0.023

108

$0.140

$0.054

$0.034

$0.023

Mouser Electronics

USA . 3,357 parts In-Stock

1+ parts

$0.190

100+ parts

$0.061

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$0.039

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$0.034

3,357

$0.190

$0.061

$0.039

$0.034

Newark

USA . 90 parts In-Stock

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$0.263

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$0.100

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$0.086

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90

$0.263

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Adafruit Industries

USA . 2,500 parts In-Stock

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$2.333

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$2.123

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$1.913

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2,500

$2.333

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EBV Elektronik

Germany . 1,356,000 parts In-Stock

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Arrow

USA . 726,000 parts In-Stock

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TTI

USA . 42,000 parts In-Stock

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Rochester

USA . 21,000 parts In-Stock

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Farnell

UK . 16,535 parts In-Stock

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$0.065

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Chip1Stop

Japan . 14,186 parts In-Stock

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$0.054

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Verical

USA . 2,186 parts In-Stock

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RS (Exports)

UK . 200 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,010 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Maritex

Poland . 2,917 parts In-Stock

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$0.048

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$0.035

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$0.028

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$0.023

2,917

$0.048

$0.035

$0.028

$0.023

Bristol Electronics

USA . 3,249 parts In-Stock

1+ parts

$0.113

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$0.056

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$0.022

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$0.017

3,249

$0.113

$0.056

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$0.017

Component Electronics Inc.

Canada . 3,000 parts In-Stock

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$0.380

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$0.290

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$0.250

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IBS Electronics

USA . 1,824,000 parts In-Stock

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NAC Semi

USA . 663,000 parts In-Stock

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Chip Stock

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Component Sense

UK . 91,312 parts In-Stock

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Cyclops Electronics Ltd

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Cogito LLC

Ukraine . 8,260 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 5,249 parts In-Stock

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Contempo Components LLC

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Vyrian

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Lantek

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Elcom Components

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Anansix

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QIE Inc.

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Sensible Micro Corp

USA . 708 parts In-Stock

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VNN

France . 650 parts In-Stock

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ComSIT Distribution GmbH

Germany . 177 parts In-Stock

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Ampacity Inc.

Singapore . 144,239 parts In-Stock

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Semicontronic

India . 281,444 parts In-Stock

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Corphita

USA . 817 parts In-Stock

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Component Stockers USA

USA . 3,547,654 parts In-Stock

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3,547,654

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AZTECH Wire

Italy . 3,621 parts In-Stock

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Argo Parts USA

USA . 4,955 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,083 parts In-Stock

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$1.070

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Modulus Dynamics

Lithuania . 12,608 parts In-Stock

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$1.457

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$1.457

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$2.333

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$2.123

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$1.913

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Perfect Parts

USA . 10,867,623 parts In-Stock

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Eastek

USA . 1,404,000 parts In-Stock

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GreenTree Electronics

Israel . 57,000 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 33,380 parts In-Stock

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Robosynatics

Brazil . 25,435 parts In-Stock

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$1.182

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$1.158

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Lucentia Tech

USA . 25,435 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,009 parts In-Stock

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Futuretech Components

Singapore . 5,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,612 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Corohmni

South Africa . 1,602 parts In-Stock

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Supply Digital

USA . 1,059 parts In-Stock

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Formix International (Excess)

India . 1,000 parts In-Stock

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Allen Electronics Distributors

USA . 400 parts In-Stock

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Kepictronics

USA . 40 parts In-Stock

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Overview

Upgrade your electronics with the BC817-40W,115 from NXP Semiconductors, a leading manufacturer known for top-quality components. This small signal bipolar junction transistor is perfect for switching applications and offers a maximum VCEsat of 0.7V. With a minimum DC current gain of 250 and a maximum collector-emitter voltage of 45V, this NPN transistor provides reliable performance. Trust NXP Semiconductors to deliver high-value solutions for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the transistor lightweight and durable, making it easy to handle and suitable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product compatible with a wide range of applications and circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into a circuit board, reducing complexity and potential errors.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient operation, making it ideal for use in various electronic devices.

Surface Mount: YES

Being surface mountable, this transistor is suitable for automated assembly processes, saving time and cost in production.

Maximum VCEsat: 0.7 V

The low VCEsat value indicates minimal voltage drop when the transistor is fully on, resulting in less power loss and increased efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on a circuit board and efficient use of space, making it suitable for compact electronic devices.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical stability and ease of soldering during assembly, ensuring reliable connections.

No. of Terminals: 3

With three terminals, this transistor is easy to integrate into a circuit and offers flexibility in connecting to other components.

Maximum Power Dissipation (Abs): 0.2 W

The low power dissipation value indicates that the transistor can handle high power loads without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices with limited PCB real estate.

Minimum DC Current Gain (hFE): 250

The high minimum DC current gain ensures stable amplification and reliable performance in various circuit applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for demanding industrial environments.

Maximum Collector-Base Capacitance: 5 pF

The low collector-base capacitance ensures minimal signal distortion and high-speed operation, making it ideal for high-frequency applications.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating provides overvoltage protection, making the transistor suitable for a wide range of voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and temperature stability, making this transistor a durable and dependable choice for various applications.

Maximum Collector Current (IC): 0.5 A

The high collector current rating allows the transistor to handle high load currents without saturation, making it suitable for power applications.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connection options, making it easy to integrate into various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures that the transistor can withstand soldering processes without damage, maintaining its reliability.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand high-temperature soldering processes, ensuring stable connections and reliability.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency indicates fast response times and high-frequency operation, making this transistor suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817-40W,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC817-40W,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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