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MMBT2222ATT1G

Onsemi

MMBT2222ATT1G by Onsemi

MMBT2222ATT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150°C, it offers fast switching times of 35ns (ton) and 285ns (toff).

Median Price

$0.032

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45

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1k+

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Newark

USA . 10,291 parts In-Stock

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$0.013

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Mouser Electronics

USA . 65,269 parts In-Stock

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65,269

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$0.032

DigiKey

USA . 62,076 parts In-Stock

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$0.170

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62,076

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Adafruit Industries

USA . 350 parts In-Stock

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$1.524

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Future Electronics

Canada . 1,470,000 parts In-Stock

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Verical

USA . 78,000 parts In-Stock

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Master Electronics

USA . 57,000 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Arrow

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Element14

Singapore . 4,155 parts In-Stock

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Farnell

UK . 3,925 parts In-Stock

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Rochester

USA . 3,005 parts In-Stock

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Chip1Stop

Japan . 650 parts In-Stock

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Digiode

USA . 231 parts In-Stock

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TME

Poland . 2,198 parts In-Stock

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Maritex

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Nova Conductors

Japan . 10 parts In-Stock

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Ozdisan Elektronik

Türkiye . 7,940 parts In-Stock

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NAC Semi

USA . 8,040,000 parts In-Stock

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IBS Electronics

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Chip Stock

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Electro Sonic

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Cyclops Electronics Ltd

UK . 17,819 parts In-Stock

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Inventory MP

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A&K Electronics

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Diverse Electronics

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Semtec, LLC

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Atlantic Semiconductor

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Sensible Micro Corp

USA . 1,022 parts In-Stock

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EMSNET

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PC Components Company LLC

USA . 750 parts In-Stock

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Rebound Electronics

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Quantum Digital Technology

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Prism Electronics

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Component Stockers USA

USA . 241,252 parts In-Stock

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Corohmni

South Africa . 98 parts In-Stock

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Semicontronic

India . 52,468 parts In-Stock

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Ampacity Inc.

Singapore . 49,615 parts In-Stock

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Corphita

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Argo Parts USA

USA . 1,903 parts In-Stock

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Modulus Dynamics

Lithuania . 450 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.145

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$1.524

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$1.448

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$1.524

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Aztec Data Supply Inc.

USA . 180 parts In-Stock

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$1.725

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Perfect Parts

USA . 2,047,149 parts In-Stock

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CPlus Electronics

USA . 300,000 parts In-Stock

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Epart123

USA . 123,000 parts In-Stock

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Authorized Procurement Solutions

USA . 100,007 parts In-Stock

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GreenTree Electronics

Israel . 72,532 parts In-Stock

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Continental Prestige Electronics

USA . 9,000 parts In-Stock

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SupplyDigital Components

Austria . 7,364 parts In-Stock

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Problanco Electronics

Mexico . 3,108 parts In-Stock

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Eastek

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Latvia . 2,365 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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Kulean Microsystems

USA . 1,610 parts In-Stock

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Robosynatics

Brazil . 1,440 parts In-Stock

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Lucentia Tech

USA . 1,440 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 123 parts In-Stock

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Overview

Unleash the power of innovation with the MMBT2222ATT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that promises exceptional performance and reliability. Manufactured by industry leaders, this NPN transistor is perfect for amplifier applications, offering unparalleled precision and efficiency. With its compact design, surface mount capability, and impressive operating temperature range, this transistor is a game-changer in the world of electronics. Elevate your projects with the MMBT2222ATT1G and experience the difference in quality and performance that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this BJT lightweight and durable.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into common amplifier circuits.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the BJT in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

The rectangular package shape saves space on the PCB, making it suitable for compact designs.

Terminal Form: GULL WING

The gull wing terminal form provides reliable solder connections for enhanced stability.

No. of Terminals: 3

The 3 terminals make it easy to interface with external circuitry for amplifier applications.

Maximum Power Dissipation (Abs): 0.15 W

With a high power dissipation rating, this BJT can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances portability and ease of integration in compact designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222ATT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222ATT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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