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ULN2003ANSR

Texas Instruments

ULN2003ANSR by Texas Instruments

ULN2003ANSR by Texas Instruments is a NPN BJT transistor with 7 elements, max. collector current of 0.5A, and max. collector-emitter voltage of 50V. It is used for switching applications in surface mount technology due to its small outline package style and gull wing terminals.

Median Price

$0.742

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 4,360 parts In-Stock

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$0.453

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$0.308

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$0.158

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$0.453

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Element14

Singapore . 83 parts In-Stock

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$1.030

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$0.533

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$0.473

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$0.437

83

$1.030

$0.533

$0.473

$0.437

Adafruit Industries

USA . 1,000 parts In-Stock

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$1.164

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$1.106

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$1.106

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1,000

$1.164

$1.106

$1.106

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Mouser Electronics

USA . 1,982 parts In-Stock

1+ parts

$1.730

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$0.703

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$0.472

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$0.367

1,982

$1.730

$0.703

$0.472

$0.367

DigiKey

USA . 6,345 parts In-Stock

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$0.349

6,345

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Chip1Stop

Japan . 132 parts In-Stock

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$0.259

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$0.220

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132

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$0.259

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Farnell

UK . 64 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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$0.314

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$0.314

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Digiode

USA . 1,330 parts In-Stock

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$0.430

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$0.430

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Chip Stock

USA . 122,600 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

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ComSIT USA

USA . 15,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,297 parts In-Stock

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Vyrian

USA . 1,615 parts In-Stock

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Bristol Electronics

USA . 500 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 1,834 parts In-Stock

1+ parts

$0.220

100+ parts

$0.214

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$0.213

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1,834

$0.220

$0.214

$0.213

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Ampacity Inc.

Singapore . 1,695 parts In-Stock

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$0.220

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1,695

$0.220

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Aranea Global

USA . 1,000 parts In-Stock

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$0.307

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$0.295

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1,000

$0.307

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$0.295

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Argo Parts USA

USA . 1,718 parts In-Stock

1+ parts

$0.314

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$0.304

1,718

$0.314

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$0.304

Corphita

USA . 2,863 parts In-Stock

1+ parts

$0.408

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2,863

$0.408

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Continental Prestige Electronics

USA . 2,000 parts In-Stock

1+ parts

$0.561

100+ parts

$0.267

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$0.214

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2,000

$0.561

$0.267

$0.214

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.164

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$1.106

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$1.106

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1,000

$1.164

$1.106

$1.106

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Parana Technologies

USA . 27 parts In-Stock

1+ parts

$1.335

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$2.069

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27

$1.335

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$2.069

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Corohmni

South Africa . 897 parts In-Stock

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$1.413

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$1.413

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DigiPath Technology Company

USA . 1,411 parts In-Stock

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$1.470

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$1.352

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$1.470

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ChromeModa Solutions

Germany . 5,800 parts In-Stock

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$1.500

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$1.230

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$1.500

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IDEA Electronic Components Group

UK . 528 parts In-Stock

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$1.500

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$1.350

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528

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Perfect Parts

USA . 19,070 parts In-Stock

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Assy Fe

Spain . 15,101 parts In-Stock

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Lixinc

USA . 11,468 parts In-Stock

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Kepictronics

USA . 9,595 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,483 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

Singapore . 4,000 parts In-Stock

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Robosynatics

Brazil . 1,500 parts In-Stock

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Lucentia Tech

USA . 1,500 parts In-Stock

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Technoshack Inc. (Excess)

Canada . 75 parts In-Stock

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iodParts Technologies Inc.

India . 50 parts In-Stock

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50

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Overview

Texas Instruments brings you the ULN2003ANSR, a high-quality Small Signal Bipolar Junction Transistor that offers reliable performance for switching applications. With its NPN polarity and complex configuration, this transistor is perfect for various electronic projects. Its compact rectangular package with gull wing terminals makes it easy to mount on any surface. Trust Texas Instruments to deliver top-notch quality and performance with the ULN2003ANSR, providing value and benefits that customers can count on. Elevate your electronics game with this versatile transistor from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type

NPN - This type of transistor allows for easy integration into circuits and provides stable performance in switching applications.

Configuration

COMPLEX - The complex configuration of this transistor enhances its versatility and capability to handle a wide range of tasks.

Transistor Application

SWITCHING - Designed specifically for switching applications, this transistor offers efficient and precise control over electronic circuits.

Surface Mount

YES - The surface mount feature enables easy installation and space-saving design, ideal for compact electronic devices.

Package Shape

RECTANGULAR - The rectangular shape of the package makes it easy to handle and integrate into circuit boards.

Terminal Form

GULL WING - The gull wing terminal form provides secure connections and reliable performance in various environments.

No. of Elements

7 - With seven elements, this transistor offers enhanced functionality and capabilities for complex circuit designs.

No. of Terminals

16 - The 16 terminals provide ample opportunities for connections and configurations in electronic circuits.

Package Style (Meter)

SMALL OUTLINE - The small outline package style offers space-saving benefits and easy integration into compact electronic devices.

Maximum Collector-Emitter Voltage

50 V - The high maximum collector-emitter voltage makes this transistor suitable for applications requiring higher voltage levels.

Transistor Element Material

SILICON - The silicon element material ensures reliable performance and durability for long-term use.

Maximum Collector Current (IC)

0.5 A - With a maximum collector current of 0.5A, this transistor is capable of handling moderate power requirements.

Terminal Finish

Nickel/Palladium/Gold (Ni/Pd/Au) - The terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position

DUAL - The dual terminal position offers flexibility in circuit design and makes it easier to connect the transistor to other components.

Peak Reflow Temperature °C

260 - The peak reflow temperature of 260°C ensures the reliability and durability of this transistor during soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2003ANSR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2003ANSR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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