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ULN2803AFWG(5,EL,M)

Toshiba

ULN2803AFWG(5,EL,M) by Toshiba

Toshiba's ULN2803AFWG(5,EL,M) is an NPN BJT with 8 Darlington banks. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, this surface-mount transistor features built-in diodes and resistors in a small outline package.

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ComSIT Distribution GmbH

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Nova Conductors

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LIBRA Elektronik GmbH

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Corohmni

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Argo Parts USA

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Overview

Elevate your electronic projects with the ULN2803AFWG(5,EL,M) by Toshiba. Known for its superior quality and reliability, this product falls under the category of Small Signal Bipolar Junction Transistors (BJT), offering 8 banks of Darlington transistors with built-in diodes and resistors. Ideal for switching applications, this surface-mount device comes in a small outline package shape, making it easy to integrate into various designs. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 1000, this transistor element material of silicon guarantees optimal performance. Upgrade your circuits today with this exceptional product from Toshiba.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile for various circuit designs.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor make the transistor convenient and efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it reliable and efficient for controlling electrical signals in a circuit.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving space and improving the overall performance of the system.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and mounting on circuit boards, optimizing space and ensuring a neat and organized layout.

Minimum DC Current Gain (hFE): 1000

High minimum current gain ensures consistent and reliable amplification in the circuit, enhancing the stability and performance of the transistor.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications, providing versatility for a wide range of circuit designs.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stability and efficiency, making the transistor reliable and durable for long-term use.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate power levels, suitable for a variety of applications.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connections, ensuring a stable and reliable electrical connection in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2803AFWG(5,EL,M) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G18

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2803AFWG(5,EL,M) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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