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ULN2803AFWG(O,ELM)

Toshiba

ULN2803AFWG(O,ELM) by Toshiba

Toshiba's ULN2803AFWG(O,ELM) is an NPN BJT with 8 Darlington banks, built-in diode/resistor. Ideal for switching applications, it has a hFE of 1000 and can handle up to 50V/0.5A. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

$1.084

Lifecycle Status

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1k+

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Mobius Materials

USA . 1,023 parts In-Stock

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$1.084

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$0.867

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Vyrian

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Nova Conductors

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Aztec Data Supply Inc.

USA . 800 parts In-Stock

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$0.310

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Corohmni

South Africa . 388 parts In-Stock

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AZTECH Wire

Italy . 541 parts In-Stock

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Ampacity Inc.

Singapore . 1,422 parts In-Stock

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Semicontronic

India . 395 parts In-Stock

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Perfect Parts

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Overview

Unlock the potential of your electronic projects with the ULN2803AFWG(O,ELM) by Toshiba. Crafted with precision and expertise by Toshiba, this Small Signal Bipolar Junction Transistor is a game-changer in the world of switching applications. With 8 banks of Darlington transistors featuring built-in diodes and resistors, this versatile component offers unmatched reliability and performance. Whether you're a hobbyist or a seasoned pro, the ULN2803AFWG(O,ELM) will take your creations to new heights. Say goodbye to limitations and hello to endless possibilities with Toshiba's innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and reliability.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and low saturation voltage, while the built-in diode and resistor make circuit design simpler and more compact.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low on-state losses.

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly, saving space and reducing overall product size.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor that can be easily mounted and integrated into various electronic devices.

Minimum DC Current Gain (hFE): 1000

With a high DC current gain, this transistor ensures consistent and stable amplification performance in a wide range of applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels without risk of damage.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance characteristics such as high gain, low noise, and good thermal stability.

Maximum Collector Current (IC): 0.5 A

This transistor can handle moderate current levels, making it suitable for a wide range of low to medium power applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish ensures good conductivity and solderability, enhancing the reliability and lifespan of the transistor.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting and connection options, making it easier to integrate the transistor into different circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2803AFWG(O,ELM) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G18

JESD-609 Code:

e1

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2803AFWG(O,ELM) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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