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ULN2003ADRE4

Texas Instruments

ULN2003ADRE4 by Texas Instruments

ULN2003ADRE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications, this surface-mount transistor features a Gull Wing terminal form in a small outline package style.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,452 parts In-Stock

1+ parts

-

100+ parts

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$0.242

2,452

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-

-

$0.242

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.314

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-

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100

$0.314

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Chip Stock

USA . 318,160 parts In-Stock

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Vyrian

USA . 2,219 parts In-Stock

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Bristol Electronics

USA . 2,200 parts In-Stock

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2,200

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Atlantic Semiconductor

USA . 2,200 parts In-Stock

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2,200

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Digiode

USA . 1,182 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 2,421 parts In-Stock

1+ parts

$0.206

100+ parts

$0.201

1k+ parts

$0.200

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-

2,421

$0.206

$0.201

$0.200

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Ampacity Inc.

Singapore . 2,075 parts In-Stock

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$0.206

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2,075

$0.206

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Continental Prestige Electronics

USA . 6,805 parts In-Stock

1+ parts

$0.314

100+ parts

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$0.308

6,805

$0.314

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$0.308

Argo Parts USA

USA . 4,350 parts In-Stock

1+ parts

$0.314

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$0.305

4,350

$0.314

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$0.305

Corohmni

South Africa . 288 parts In-Stock

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$0.330

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288

$0.330

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.340

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$0.323

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$0.323

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450

$0.340

$0.323

$0.323

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Modulus Dynamics

Lithuania . 78 parts In-Stock

1+ parts

$0.349

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$0.345

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$0.335

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78

$0.349

$0.345

$0.335

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Parana Technologies

USA . 1,156 parts In-Stock

1+ parts

$0.785

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$1.773

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1,156

$0.785

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$1.773

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DigiPath Technology Company

USA . 603 parts In-Stock

1+ parts

$0.864

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$0.795

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603

$0.864

$0.795

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ChromeModa Solutions

Germany . 6,060 parts In-Stock

1+ parts

$0.882

100+ parts

$0.723

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6,060

$0.882

$0.723

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IDEA Electronic Components Group

UK . 1,182 parts In-Stock

1+ parts

$0.882

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$0.794

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1,182

$0.882

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$0.794

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Microchip USA

USA . 4,060 parts In-Stock

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Corphita

USA . 3,191 parts In-Stock

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Perfect Parts

USA . 1,790 parts In-Stock

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Robosynatics

Brazil . 450 parts In-Stock

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450

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Lucentia Tech

USA . 450 parts In-Stock

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$23.750

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$23.750

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$23.750

450

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$23.750

$23.750

$23.750

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.308

1k+ parts

$0.298

10k+ parts

$0.292

50

-

$0.308

$0.298

$0.292

Overview

Enhance your electronic projects with the ULN2003ADRE4 by Texas Instruments, a top-quality small signal bipolar junction transistor. Manufactured by the renowned Texas Instruments, this NPN transistor offers exceptional performance in switching applications. With its surface mount capability and compact package style, this transistor is perfect for a wide range of projects. Experience the reliability and efficiency that Texas Instruments is known for, and take your creations to the next level with the ULN2003ADRE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in such scenarios.

Maximum VCEsat: 1.6 V

With a low VCEsat value, this transistor minimizes power loss and is energy-efficient.

Surface Mount: YES

The surface-mount design allows for easy and convenient installation on circuit boards.

Maximum Collector-Emitter Voltage: 50 V

This high voltage rating makes the transistor suitable for a wide range of applications, including power circuits.

Maximum Collector Current (IC): 0.5 A

The high Collector Current rating allows the transistor to handle moderate power levels effectively.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2003ADRE4 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

ULN2003ADRE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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