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COMPLEX Small Signal Bipolar Junction Transistors (BJT) 18

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NSVUMC5NT2G by Onsemi

NSVUMC5NT2G

Onsemi

NPN AND PNP; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMPLEX

80

R-PDSO-G5

e3

1

2

5

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

.25 V

ULQ2003ADR by Texas Instruments

ULQ2003ADR

Texas Instruments

ULQ2003ADR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and collector current of 0.5A, suitable for switching applications. The package is surface mountable with Gull Wing terminals in a small outline shape.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULN2004ADG4 by Texas Instruments

ULN2004ADG4

Texas Instruments

ULN2004ADG4 by Texas Instruments is a NPN BJT with 7 elements, 0.5A IC, and 50V VCE. It is used for switching applications in surface mount designs due to its GULL WING terminals and small outline package style. The transistor's silicon material and complex configuration make it suitable for various electronic projects.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

SN75468NSRG4 by Texas Instruments

SN75468NSRG4

Texas Instruments

SN75468NSRG4 by Texas Instruments is a NPN bipolar junction transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 100V, collector current of 0.5A, and operates b/w 0-70°C. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.

LOGIC LEVEL COMPATIBLE

.5 A

100 V

COMPLEX

R-PDSO-G16

e4

1

7

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

ULQ2003ADRG4 by Texas Instruments

ULQ2003ADRG4

Texas Instruments

ULQ2003ADRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. The package is surface mountable with Gull Wing terminals in a small outline style, ideal for compact designs.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULQ2004ADG4 by Texas Instruments

ULQ2004ADG4

Texas Instruments

ULQ2004ADG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and is used for switching applications. The package is surface mountable with GULL WING terminals in a RECTANGULAR shape.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

ULQ2004ADRG4 by Texas Instruments

ULQ2004ADRG4

Texas Instruments

ULQ2004ADRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and can handle a collector current of 0.5A, making it suitable for switching applications. This surface-mount transistor features a gull wing terminal form and is housed in a small outline rectangular package.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NUS2401SNT1 by Onsemi

NUS2401SNT1

Onsemi

NUS2401SNT1 by Onsemi is a Small Signal BJT with NPN/PNP polarity, 50V VCE, and 0.2A IC. It's used for switching applications in complex configurations. The package is surface mountable with Gull Wing terminals and a max power dissipation of 0.35W.

BUILT IN BIAS RESISTORS

.2 A

50 V

COMPLEX

150

R-PDSO-G6

e0

3

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.35 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NUS2401SNT1G by Onsemi

NUS2401SNT1G

Onsemi

NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.

BUILT IN BIAS RESISTORS

.2 A

50 V

COMPLEX

150

R-PDSO-G6

e3

1

3

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.35 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

ULN2003AIN by Texas Instruments

ULN2003AIN

Texas Instruments

ULN2003AIN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, ideal for switching applications. The package style is in-line with terminal finish Ni/Pd/Au, making it suitable for complex configurations in various electronic devices.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DS2003TMT/NOPB by National Semiconductor

DS2003TMT/NOPB

National Semiconductor

DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.

LOGIC LEVEL COMPATIBLE

.5 A

55 V

COMPLEX

R-PDSO-G16

e3

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

DS2003TMTX/NOPB by National Semiconductor

DS2003TMTX/NOPB

National Semiconductor

DS2003TMTX/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and a max IC of 0.5A. With a VCE of 55V, it is ideal for surface mount designs requiring high-speed switching capabilities.

LOGIC LEVEL COMPATIBLE

.5 A

55 V

COMPLEX

R-PDSO-G16

e3

1

7

16

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

MAT14ARZ-RL by Analog Devices

MAT14ARZ-RL

Analog Devices

MAT14ARZ-RL by Analog Devices is a NPN BJT transistor with 200 min hFE, 40V VCEO, and 300MHz fT. Ideal for amplifier applications, it features a small outline package with Gull Wing terminals and operates up to 150°C.

LOW NOISE

.03 A

40 V

COMPLEX

200

MS-012AB

R-PDSO-G14

e3

1

4

14

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

300 MHz

MAT14ARZ by Analog Devices

MAT14ARZ

Analog Devices

MAT14ARZ by Analog Devices is a NPN BJT transistor with 4 elements and 14 terminals. It has a hFE of 200, operates up to 150°C, and handles a max voltage of 40V. Ideal for amplifier applications due to its high transition frequency of 300MHz and small outline package style.

LOW NOISE

.03 A

40 V

COMPLEX

200

MS-012AB

R-PDSO-G14

e3

1

4

14

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

300 MHz

EMC3DXV5T5G by Onsemi

EMC3DXV5T5G

Onsemi

EMC3DXV5T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It has 2 elements, 5 terminals, hFE of 35, VCE of 50V, IC of 0.1A, and Ptot of 0.5W. This transistor operates up to 150 °C with a peak reflow temp of 260°C in a small outline package suitable for surface mount technology.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMPLEX

35

R-PDSO-F5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

SN75468DE4 by Texas Instruments

SN75468DE4

Texas Instruments

SN75468DE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. It is used for switching applications in surface mount designs due to its small outline package style and Gull Wing terminals.

LOGIC LEVEL COMPATIBLE

.5 A

100 V

COMPLEX

MS-012AC

R-PDSO-G16

e4

1

7

16

70 Cel

0 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

1.6 V

ULN2003AINE4 by Texas Instruments

ULN2003AINE4

Texas Instruments

ULN2003AINE4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. The package style is in-line with terminal finish Ni/Pd/Au, suitable for through-hole mounting.

LOGIC LEVEL COMPATIBLE

.5 A

50 V

COMPLEX

MS-001BB

R-PDIP-T16

e4

7

16

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

NPN

Not Qualified

NO

Nickel/Palladium/Gold (Ni/Pd/Au)

THROUGH-HOLE

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BA12003DF-ZE2 by ROHM

BA12003DF-ZE2

ROHM

ROHM's BA12003DF-ZE2 is a NPN BJT transistor with 1000 min hFE, 60V max VCE, and 0.5A max IC. Ideal for switching applications in small outline packages, featuring GULL WING terminals and SILICON material.

.5 A

60 V

COMPLEX

1000

R-PDSO-G16

7

16

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON