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ULQ2003ADR

Texas Instruments

ULQ2003ADR by Texas Instruments

ULQ2003ADR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and collector current of 0.5A, suitable for switching applications. The package is surface mountable with Gull Wing terminals in a small outline shape.

Median Price

$0.273

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

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$0.262

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$0.249

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Arrow

USA . 22,500 parts In-Stock

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$0.195

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Verical

USA . 1,915 parts In-Stock

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$0.359

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$0.192

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1,915

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$0.359

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Chip1Stop

Japan . 961 parts In-Stock

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$0.284

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Digiode

USA . 1,856 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Component Electronics Inc.

Canada . 8 parts In-Stock

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$0.460

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$0.400

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Forefront Electronics and Design

USA . 5 parts In-Stock

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Chip Stock

USA . 104,810 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

Germany . 3,188 parts In-Stock

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Pegasus Components GmbH

Germany . 2,500 parts In-Stock

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Vectronix, Inc

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ComSIT Distribution GmbH

Germany . 1,778 parts In-Stock

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PC Components Company LLC

USA . 995 parts In-Stock

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Bristol Electronics

USA . 709 parts In-Stock

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Lantek

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550

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Connect4Technologies Inc.

Canada . 363 parts In-Stock

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Micros

Poland . 338 parts In-Stock

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$0.285

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338

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ECAB

Sweden . 120 parts In-Stock

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A&K Electronics

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Rotakorn

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Cyclops Electronics Ltd

UK . 52 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 6,411 parts In-Stock

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$0.166

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$0.162

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$0.161

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Ampacity Inc.

Singapore . 6,136 parts In-Stock

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Corphita

USA . 2,732 parts In-Stock

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Argo Parts USA

USA . 4,378 parts In-Stock

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Continental Prestige Electronics

USA . 1,551 parts In-Stock

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Corohmni

South Africa . 20 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.250

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.262

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$0.249

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$0.262

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Modulus Dynamics

Lithuania . 15 parts In-Stock

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$0.283

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$0.280

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$0.271

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15

$0.283

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Component Stockers USA

USA . 17 parts In-Stock

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$0.550

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$0.180

17

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$0.180

Parana Technologies

USA . 2,366 parts In-Stock

1+ parts

$0.773

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$1.767

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2,366

$0.773

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$1.767

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IDEA Electronic Components Group

UK . 1,089 parts In-Stock

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$0.868

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$0.781

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1,089

$0.868

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ChromeModa Solutions

Germany . 894 parts In-Stock

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$0.868

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$0.712

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$0.868

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AZTECH Wire

Italy . 63 parts In-Stock

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$18.310

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Microchip USA

USA . 2,033 parts In-Stock

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$67.090

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$65.340

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$64.760

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$64.760

Perfect Parts

USA . 328,282 parts In-Stock

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Kepictronics

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S.R.D Solutions

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Computer Components Inc. - USA

USA . 15,812 parts In-Stock

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A-Z Elektronik GmbH

Germany . 12,914 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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iodParts Technologies Inc.

India . 8,540 parts In-Stock

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$0.338

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Infinite Electronics LLP (Excess)

. 6,250 parts In-Stock

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Lixinc

USA . 4,111 parts In-Stock

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Formix International (Excess)

India . 3,705 parts In-Stock

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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$1.323

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$1.323

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$1.323

900

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$1.323

$1.323

$1.323

Lucentia Tech

USA . 900 parts In-Stock

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$1.323

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$1.323

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$1.323

900

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$1.323

$1.323

$1.323

DigiPath Technology Company

USA . 564 parts In-Stock

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$0.783

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564

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$0.783

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Overview

Discover the ULQ2003ADR by Texas Instruments, a top-quality small signal bipolar junction transistor that offers exceptional performance in switching applications. Created by renowned manufacturer Texas Instruments, this NPN transistor boasts a complex configuration and 7 elements for superior functionality. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.5A, this transistor is designed for reliability and efficiency. Whether you're working on industrial automation or automotive electronics, the ULQ2003ADR delivers the value and benefits you need for success. Upgrade your projects with this advanced transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor element, making it durable and reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design options.

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and responsive control.

Surface Mount: YES

Surface mount capability makes it easier to integrate into compact electronic designs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape offers efficient use of board space and facilitates easy placement and soldering.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and ease of soldering during assembly.

No. of Elements: 7

Multiple elements allow for enhanced functionality and performance in complex circuit designs.

No. of Terminals: 16

More terminals provide flexibility in circuit connections and enable versatile application possibilities.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers space-saving benefits and compatibility with modern electronic devices.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating allows for safe operation in various voltage levels and applications.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and stability in different operating conditions.

Maximum Collector Current (IC): 0.5 A

High maximum collector current rating enables handling of substantial current loads without overheating or damage.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Nickel/Palladium/Gold finish provides excellent conductivity, corrosion resistance, and solderability for long-term reliability.

Terminal Position: DUAL

Dual terminal position enhances connection options and facilitates efficient circuit design and layout.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure soldering and reliability during assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULQ2003ADR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULQ2003ADR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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