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BC817K40E6327HTSA1

Infineon Technologies

BC817K40E6327HTSA1 by Infineon Technologies

BC817K40E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 250, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. Features Gull Wing terminals in a small outline package.

Median Price

$0.062

Lifecycle Status

EOL

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.076

100+ parts

$0.072

1k+ parts

$0.072

10k+ parts

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100

$0.076

$0.072

$0.072

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Arrow

USA . 75,280 parts In-Stock

1+ parts

$0.092

100+ parts

$0.029

1k+ parts

$0.027

10k+ parts

$0.027

75,280

$0.092

$0.029

$0.027

$0.027

Chip1Stop

Japan . 82,380 parts In-Stock

1+ parts

-

100+ parts

$0.062

1k+ parts

$0.043

10k+ parts

$0.027

82,380

-

$0.062

$0.043

$0.027

Verical

USA . 75,280 parts In-Stock

1+ parts

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$0.027

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$0.027

75,280

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-

$0.027

$0.027

RS (Exports)

UK . 600 parts In-Stock

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$0.047

600

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$0.047

Rochester

USA . 229 parts In-Stock

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$0.062

1k+ parts

$0.051

10k+ parts

$0.046

229

-

$0.062

$0.051

$0.046

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 670 parts In-Stock

1+ parts

$0.072

100+ parts

-

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670

$0.072

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Nova Conductors

Japan . 20 parts In-Stock

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$0.081

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20

$0.081

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PC Components Company LLC

USA . 128,000 parts In-Stock

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Chip Stock

USA . 106,150 parts In-Stock

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Vyrian

USA . 56,437 parts In-Stock

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NAC Semi

USA . 42,000 parts In-Stock

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$0.125

42,000

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$0.125

TME

Poland . 33,000 parts In-Stock

1+ parts

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$0.039

33,000

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$0.039

Rutronik

Germany . 3,000 parts In-Stock

1+ parts

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$0.043

3,000

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$0.043

Bristol Electronics

USA . 3,000 parts In-Stock

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VNN

France . 743 parts In-Stock

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743

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Contempo Components LLC

USA . 650 parts In-Stock

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650

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Distributors (Availability)

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Ampacity Inc.

Singapore . 55,106 parts In-Stock

1+ parts

$0.023

100+ parts

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55,106

$0.023

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Semicontronic

India . 54,811 parts In-Stock

1+ parts

$0.023

100+ parts

$0.022

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$0.022

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54,811

$0.023

$0.022

$0.022

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Corphita

USA . 880 parts In-Stock

1+ parts

$0.068

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880

$0.068

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Modulus Dynamics

Lithuania . 7,090 parts In-Stock

1+ parts

$0.074

100+ parts

$0.071

1k+ parts

$0.068

10k+ parts

-

7,090

$0.074

$0.071

$0.068

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Corohmni

South Africa . 668 parts In-Stock

1+ parts

$0.074

100+ parts

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668

$0.074

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.076

100+ parts

$0.072

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$0.072

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100

$0.076

$0.072

$0.072

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Continental Prestige Electronics

USA . 6,134 parts In-Stock

1+ parts

$0.081

100+ parts

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$0.079

6,134

$0.081

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-

$0.079

Argo Parts USA

USA . 407 parts In-Stock

1+ parts

$0.081

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$0.079

407

$0.081

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$0.079

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

$0.081

100+ parts

$0.077

1k+ parts

$0.073

10k+ parts

$0.072

40

$0.081

$0.077

$0.073

$0.072

Component Stockers USA

USA . 449,678 parts In-Stock

1+ parts

$0.310

100+ parts

$0.080

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$0.060

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$0.030

449,678

$0.310

$0.080

$0.060

$0.030

Microchip USA

USA . 1,342 parts In-Stock

1+ parts

$0.398

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1,342

$0.398

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Aztec Data Supply Inc.

USA . 3,287 parts In-Stock

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$0.670

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3,287

$0.670

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Andel Nordic

Denmark . 1,736 parts In-Stock

1+ parts

$35.650

100+ parts

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$24.956

10k+ parts

$24.956

1,736

$35.650

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$24.956

$24.956

Perfect Parts

USA . 203,549 parts In-Stock

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203,549

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RC Electronics

USA . 103,000 parts In-Stock

1+ parts

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100+ parts

$0.080

1k+ parts

$0.070

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$0.070

103,000

-

$0.080

$0.070

$0.070

Eastek

USA . 66,000 parts In-Stock

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66,000

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Robosynatics

Brazil . 3,000 parts In-Stock

1+ parts

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$1.220

1k+ parts

$1.220

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$1.220

3,000

-

$1.220

$1.220

$1.220

Lucentia Tech

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

$1.220

1k+ parts

$1.220

10k+ parts

$1.220

3,000

-

$1.220

$1.220

$1.220

Allen Electronics Distributors

USA . 600 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.058

10k+ parts

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600

-

-

$0.058

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Overview

Looking to amplify your electronic projects with top-quality components? Look no further than the BC817K40E6327HTSA1 by Infineon Technologies. Known for their superior manufacturing standards, Infineon delivers reliable Small Signal Bipolar Junction Transistors that are perfect for amplifier applications. With a high DC current gain and low collector-emitter voltage, this NPN transistor offers excellent performance for your designs. Trust in Infineon's expertise and choose the BC817K40E6327HTSA1 for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good electrical insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor suitable for a wide range of electronic circuits.

Configuration: SINGLE

The single configuration allows for easy integration into circuits, simplifying the design and assembly process.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for providing high gain and low noise performance in audio and other signal amplification circuits.

Surface Mount: YES

Being surface mountable, this transistor is well-suited for automated assembly processes, leading to faster and more cost-effective production.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of board space and facilitates easy placement and soldering of the transistor.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering during assembly, ensuring reliable connections on the circuit board.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in a circuit and offers flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space, making it ideal for compact electronic devices and applications where size is a constraint.

Minimum DC Current Gain (hFE): 250

A high minimum current gain of 250 ensures consistent and stable amplification performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating of 45V allows for use in a wide range of voltage levels, increasing versatility and compatibility.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this transistor a durable and long-lasting choice for electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate power levels, making it suitable for a variety of small signal applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

The dual terminal position allows for symmetrical placement and easy connection in the circuit, enabling efficient circuit layout and design.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 170 MHz

The high nominal transition frequency of 170MHz indicates fast response and high-frequency performance, making this transistor ideal for high-speed signal processing and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817K40E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC817K40E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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