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DS2003TMT/NOPB

National Semiconductor

DS2003TMT/NOPB by National Semiconductor

DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.

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Overview

Discover the DS2003TMT/NOPB by National Semiconductor, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With its NPN polarity and complex configuration, this transistor offers unparalleled performance and reliability. Its compact rectangular package with gull wing terminals makes it ideal for surface mount applications. Experience the benefits of Matte Tin terminal finish, Silicon element material, and a maximum collector-emitter voltage of 55V. Trust National Semiconductor for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: COMPLEX

The complex configuration allows for more precise control and customization in circuit design, making it suitable for advanced applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient switching capabilities.

Surface Mount: YES

Surface mount technology allows for efficient placement on circuit boards, saving space and improving overall circuit performance.

Maximum Collector-Emitter Voltage: 55 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.5 A

This transistor can handle currents up to 0.5 A, making it suitable for low to moderate power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DS2003TMT/NOPB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DS2003TMT/NOPB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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