Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.
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This material is lightweight and durable, making the transistor easy to handle and resistant to damage.
NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.
The complex configuration allows for more precise control and customization in circuit design, making it suitable for advanced applications.
Designed specifically for switching applications, this transistor provides fast and efficient switching capabilities.
Surface mount technology allows for efficient placement on circuit boards, saving space and improving overall circuit performance.
With a high maximum voltage rating, this transistor can handle a wide range of voltage levels, providing flexibility in circuit design.
This transistor can handle currents up to 0.5 A, making it suitable for low to moderate power applications.
Small Signal Bipolar Junction Transistors (BJT) DS2003TMT/NOPB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from National Semiconductor
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DS2003TMT/NOPB Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.
BAV99
National Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
NE555DR
Texas Instruments
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
1N4148
Central Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Nte Electronics
BSS138BK,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
Pro-an Electronic
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
2N2222A
Itt Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
06035C103KAT2A
KYOCERA AVX
06035C103KAT2A by KYOCERA AVX is a SMT ceramic capacitor with 0.01uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and 10% tolerance. Ideal for applications requiring compact surface mount capacitors with stable performance in a wide temperature range.
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;
BSS138W-7-F
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
BC847C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817K40E6327HTSA1
BC817K40E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 250, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. Features Gull Wing terminals in a small outline package.
BC547B
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2907A
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: METAL;
BC847C,235
BC847C,235 by NXP Semiconductors is a small signal NPN bipolar junction transistor (BJT) with a max VCEsat of 0.6V and a min DC current gain (hFE) of 420. It is commonly used for switching applications and has a max collector-emitter voltage of 45V.
SMMBT4403LT1G
SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.
2N2222AUB
Microsemi
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
2N3904
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
ULN2803AFWG(5,EL,M)
Toshiba
Toshiba's ULN2803AFWG(5,EL,M) is an NPN BJT with 8 Darlington banks. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, this surface-mount transistor features built-in diodes and resistors in a small outline package.
2N3906
Jiangsu Changjiang Electronics Technology
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
MMBT2222A
Yangzhou Yangjie Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
BC547-C
Samsung
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BC846B
Unisonic Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
2N2222AUA
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Terminal Form: NO LEAD;
KSP13TA
Fairchild Semiconductor
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 10000;
MMBT3904
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
2N3904TAR
Rochester Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SBC807-40LT1G
SBC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. It has VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.
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DS2003CM
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; No. of Elements: 7;
DS2003CM by Texas Instruments is a NPN BJT transistor for switching applications. With 55V VCE, 0.5A IC, and 1000ns ton/toff, it operates b/w -40 to 150°C. Its GULL WING terminals in a SMALL OUTLINE package make it suitable for surface mount designs.
DS2003CMX/NOPB
NPN; Configuration: 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Finish: MATTE TIN; Maximum Collector-Emitter Voltage: 55 V;
DS2003CMX
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
DS2003CMX by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 55V and a max collector current of 0.5A. It is commonly used for switching applications and comes in a surface mount rectangular package with 16 terminals.
DS2003TMX/NOPB
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; No. of Elements: 7; Terminal Position: DUAL;
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 16;
DS2003CM/NOPB
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Turn On Time (ton): 1000 ns; Terminal Position: DUAL;
DS2003TM
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING; No. of Elements: 7;
DS2003TM/NOPB
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
DS2003TMTX/NOPB
DS2003TMTX/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and a max IC of 0.5A. With a VCE of 55V, it is ideal for surface mount designs requiring high-speed switching capabilities.
DS2003TMX
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; Maximum Turn On Time (ton): 1000 ns;
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Terminal Form: GULL WING;
DS2003CN
Small Signal Bipolar Transistors;
DS2003TMT
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0; Transistor Element Material: SILICON;
NPN; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 40;
DS2003TMTX
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