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DS2003TM

Texas Instruments

DS2003TM by Texas Instruments

DS2003TM by Texas Instruments is a NPN BJT transistor for switching applications. It has 55V max collector-emitter voltage, 0.5A max collector current, and 1000ns turn on/off time. With Gull Wing terminals in a small outline package, it's ideal for compact electronic designs.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Nova Conductors

Japan . 42 parts In-Stock

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Infinite Electronics LLP

India . 13,440 parts In-Stock

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Anansix

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Digiode

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Chip Stock

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Vyrian

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Resion

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Connector Distribution Corp

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Right Parts Inc.

USA . 192 parts In-Stock

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Zilex Electronics Inc.

Canada . 60 parts In-Stock

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Sunrise Surplus Inc.

USA . 48 parts In-Stock

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48

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ABC Electronics Ltd.

UK . 48 parts In-Stock

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Speed Components Ltd

Israel . 48 parts In-Stock

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LWI Electronics Inc

India . 38 parts In-Stock

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Sensible Micro Corp

USA . 14 parts In-Stock

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Rebound Electronics

UK . 11 parts In-Stock

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Classic Components Corporation

USA . 5 parts In-Stock

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Semi Source

USA . 3 parts In-Stock

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Carlin Systems, Inc.

USA . 1 parts In-Stock

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One Stop Electronics

USA . 832 parts In-Stock

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$0.050

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832

$0.050

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Parana Technologies

USA . 637 parts In-Stock

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$0.634

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$1.701

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637

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DigiPath Technology Company

USA . 1,208 parts In-Stock

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$0.698

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$0.642

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ChromeModa Solutions

Germany . 3,945 parts In-Stock

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$0.712

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$0.584

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IDEA Electronic Components Group

UK . 2,041 parts In-Stock

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$0.712

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$0.641

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Netroflash

USA . 1,000 parts In-Stock

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$0.980

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AZTECH Wire

Italy . 590 parts In-Stock

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$15.962

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Ampacity Inc.

Singapore . 301 parts In-Stock

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$22.050

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Continental Prestige Electronics

USA . 6,566 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,236 parts In-Stock

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Argo Parts USA

USA . 4,420 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,157 parts In-Stock

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Corphita

USA . 2,769 parts In-Stock

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Kepictronics

USA . 1,339 parts In-Stock

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Assy Fe

Spain . 288 parts In-Stock

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Microchip USA

USA . 248 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 129 parts In-Stock

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Overview

Unlock the power of innovative technology with the Texas Instruments DS2003TM transistor. This high-quality product offers unmatched reliability and precision, thanks to its sophisticated design and top-tier materials. Perfect for switching applications, this NPN transistor is designed to deliver optimal performance, making it an essential component for any electronic project. Experience the value and benefits of Texas Instruments' expertise with the DS2003TM transistor - the perfect choice for all your small signal bipolar junction transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance.

Configuration: COMPLEX

The complex configuration allows for versatile use in different circuit designs, offering flexibility.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and effective performance in such scenarios.

Surface Mount: YES

Facilitates easy and convenient PCB assembly, saving time and effort during production.

Maximum Collector-Emitter Voltage: 55 V

With a high maximum voltage rating, this transistor can handle higher voltage levels, increasing its overall versatility.

Maximum Collector Current (IC): 0.5 A

Able to handle up to 0.5 amps of current, making it suitable for low to moderate power applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and conductivity, simplifying the assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DS2003TM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

1000 ns

Trade Compliance

DS2003TM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5962-01-460-8327, 5962014608327

NIIN

014608327

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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