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DS2003TMX/NOPB

Texas Instruments

DS2003TMX/NOPB by Texas Instruments

DS2003TMX/NOPB by Texas Instruments is a NPN BJT transistor for switching applications. It has 55V max collector-emitter voltage, 0.5A max collector current, and 1000ns turn on/off time. Ideal for surface mount designs in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,840 parts In-Stock

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4,840

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Anansix

USA . 2,471 parts In-Stock

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2,471

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ComSIT Distribution GmbH

Germany . 1,697 parts In-Stock

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1,697

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Vyrian

USA . 1,069 parts In-Stock

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1,069

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Chip Stock

USA . 545 parts In-Stock

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545

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Technoshack Inc.

Canada . 160 parts In-Stock

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160

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Elcom Components

USA . 87 parts In-Stock

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87

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Nova Conductors

Japan . 76 parts In-Stock

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76

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Distributors (Availability)

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Parana Technologies

USA . 2,017 parts In-Stock

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$1.029

100+ parts

-

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$1.898

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2,017

$1.029

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$1.898

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DigiPath Technology Company

USA . 1,919 parts In-Stock

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$1.133

100+ parts

$1.042

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1,919

$1.133

$1.042

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ChromeModa Solutions

Germany . 3,705 parts In-Stock

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$1.156

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$0.948

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3,705

$1.156

$0.948

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IDEA Electronic Components Group

UK . 2,170 parts In-Stock

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$1.156

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$1.040

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2,170

$1.156

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$1.040

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Corohmni

South Africa . 123 parts In-Stock

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$1.940

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123

$1.940

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Ampacity Inc.

Singapore . 1,577 parts In-Stock

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$7.050

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$7.050

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AZTECH Wire

Italy . 595 parts In-Stock

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$18.986

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$18.986

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One Stop Electronics

USA . 543 parts In-Stock

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$60.050

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543

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Perfect Parts

USA . 10,993 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,130 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,323 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,522 parts In-Stock

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3,522

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Glotronic Ltd.

UK . 3,500 parts In-Stock

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3,500

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Corphita

USA . 3,035 parts In-Stock

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Microchip USA

USA . 337 parts In-Stock

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337

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Argo Parts USA

USA . 180 parts In-Stock

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180

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Overview

Upgrade your electronic designs with the DS2003TMX/NOPB by Texas Instruments, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured with precision and expertise, this NPN transistor offers superior performance and reliability. Its compact size and surface mount capability make it ideal for a wide range of electronic devices. Experience the value and benefits of this high-performance component, from its fast turn-on and turn-off times to its high collector-emitter voltage. Trust the DS2003TMX/NOPB to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the internal components of the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

Commonly used for low-power amplification and switching applications, offering versatility and compatibility in various circuit designs.

Configuration: COMPLEX

Allows for more advanced functionality and performance, making this transistor suitable for complex circuit requirements.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast switching speeds and efficient operation in electronic circuits.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and facilitating automated assembly processes.

Maximum Collector-Emitter Voltage: 55 V

Can handle relatively high voltage levels, making it suitable for a wide range of circuit designs and applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for low-power applications requiring efficient current flow.

Maximum Turn On/Off Time: 1000 ns

Provides fast switching speeds, ideal for applications that require quick response times and precise control.

Terminal Finish: MATTE TIN

Ensures good solderability and reliable electrical connections, making installation and maintenance easier.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes, ensuring proper bonding and long-lasting performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DS2003TMX/NOPB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

55 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

1000 ns

Trade Compliance

DS2003TMX/NOPB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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