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JANTX2N2222AUB

Microchip Technology

JANTX2N2222AUB by Microchip Technology

JANTX2N2222AUB by Microchip is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications, it operates up to 200°C and has ton of 35ns and toff of 300ns.

Median Price

$8.727

Lifecycle Status

Suppliers In-Stock

33

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1k+

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TTI

USA . 13,590 parts In-Stock

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Avnet

USA . 115 parts In-Stock

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Chip1Stop

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Arrow

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Verical

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Nova Conductors

Japan . 500 parts In-Stock

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$8.798

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Freelance Electronics

USA . 290 parts In-Stock

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$10.630

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Ozdisan Elektronik

Türkiye . 360 parts In-Stock

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American Microsemiconductor Inc.

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Electro Sonic

Canada . 2,078 parts In-Stock

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NexGen Digital

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Vyrian

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Chip Stock

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Connector Distribution Corp

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Right Parts Inc.

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Demsay Elektronik

Türkiye . 186 parts In-Stock

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Lantek

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Sensible Micro Corp

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First Choice Components Inc.

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Euro-Tech

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Mil-Aero Solutions, Inc.

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Prism Electronics

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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A2Z Electronics, Inc.

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Bristol Electronics

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Cyclops Electronics Ltd

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Corohmni

South Africa . 6 parts In-Stock

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$1.379

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Aztec Data Supply Inc.

USA . 1,480 parts In-Stock

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Advanced Electronics

New Zealand . 15 parts In-Stock

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$1.646

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$1.564

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Modulus Dynamics

Lithuania . 1,000 parts In-Stock

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$6.132

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$6.070

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$5.886

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Aranea Global

USA . 500 parts In-Stock

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$8.622

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$8.277

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Continental Prestige Electronics

USA . 1,215 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Microchip USA

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Metaverse IC Inc.

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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GreenTree Electronics

Israel . 132 parts In-Stock

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Epart123

USA . 96 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the JANTX2N2222AUB Small Signal Bipolar Junction Transistor by Microchip Technology. Known for their high-quality components, Microchip Technology delivers reliable and durable products that are perfect for switching applications. With a maximum operating temperature of 200°C and a maximum collector-emitter voltage of 50V, this NPN transistor offers unmatched value and efficiency. Upgrade your technology solutions today with the JANTX2N2222AUB and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: NPN

Common type used in many electronic circuits, providing reliable performance.

Configuration: SINGLE

Simplified design for ease of use in applications requiring a single transistor.

Transistor Application: SWITCHING

Designed for switching applications, enabling fast and efficient performance.

Surface Mount: YES

Enables easy installation on circuit boards, saving space and facilitating assembly.

Package Shape: RECTANGULAR

Fits well in standard circuit designs, ensuring compatibility with existing layouts.

Minimum DC Current Gain (hFE): 30

Ensures sufficient amplification capabilities for versatile use in different circuits.

Maximum Operating Temperature: 200 °C

Can operate reliably in high-temperature environments, increasing the range of applications.

Maximum Collector-Emitter Voltage: 50 V

Provides a high voltage rating for handling various voltage levels in a circuit.

Transistor Element Material: SILICON

Offers stable and consistent performance characteristics for enhanced reliability.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time for efficient switching operations in time-critical applications.

Maximum Collector Current (IC): 0.8 A

Sufficient current-handling capability for medium-power applications.

Maximum Turn Off Time (toff): 300 ns

Reasonable turn-off time to prevent delays in switching processes.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for easy integration into circuits.

Terminal Position: DUAL

Dual terminal position for versatility in circuit connections.

Reference Standard: MIL-19500/255

Compliance with industry standards ensures quality and reliability for critical applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N2222AUB attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-CDSO-N3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Qualified

Reference Standard:

MIL-19500/255

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

JANTX2N2222AUB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-555-0092, 5961015550092, 5961-01-436-0048, 5961014360048

NIIN

015550092, 014360048

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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