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BC847BLT3G

Onsemi

BC847BLT3G by Onsemi

BC847BLT3G by Onsemi is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 45V and a min DC current gain of 200. It is commonly used in applications such as amplifiers, switches, and general-purpose circuits.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 83,071 parts In-Stock

1+ parts

$0.045

100+ parts

$0.017

1k+ parts

$0.009

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$0.007

83,071

$0.045

$0.017

$0.009

$0.007

Newark

USA . 43,100 parts In-Stock

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$0.113

100+ parts

$0.042

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$0.025

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43,100

$0.113

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Mouser Electronics

USA . 11,701 parts In-Stock

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$0.120

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$0.044

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$0.025

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11,701

$0.120

$0.044

$0.025

$0.020

Adafruit Industries

USA . 10 parts In-Stock

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$1.476

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$1.343

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$1.210

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10

$1.476

$1.343

$1.210

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Rochester

USA . 5,080,484 parts In-Stock

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$0.013

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$0.011

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5,080,484

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$0.013

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DigiKey

USA . 5,080,484 parts In-Stock

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Verical

USA . 4,725,288 parts In-Stock

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EBV Elektronik

Germany . 630,000 parts In-Stock

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Chip1Stop

Japan . 105,861 parts In-Stock

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$0.015

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$0.011

105,861

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$0.015

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$0.011

Avnet

USA . 90,000 parts In-Stock

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$0.010

RS (Exports)

UK . 24,400 parts In-Stock

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$0.065

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$0.060

24,400

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$0.060

Master Electronics

USA . 10,000 parts In-Stock

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Element14

Singapore . 945 parts In-Stock

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$0.064

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$0.036

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$0.031

945

-

$0.064

$0.036

$0.031

Farnell

UK . 945 parts In-Stock

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$0.065

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$0.025

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$0.019

945

-

$0.065

$0.025

$0.019

Distributors (In-Stock)

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Digiode

USA . 1,838 parts In-Stock

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$0.024

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Nova Conductors

Japan . 200 parts In-Stock

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$0.033

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200

$0.033

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IBS Electronics

USA . 1,390,000 parts In-Stock

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$0.012

1,390,000

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$0.012

Vyrian

USA . 623,497 parts In-Stock

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623,497

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Chip Stock

USA . 497,500 parts In-Stock

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NAC Semi

USA . 280,000 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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VNN

France . 1,276 parts In-Stock

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1,276

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Cyclops Electronics Ltd

UK . 1,020 parts In-Stock

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Bristol Electronics

USA . 100 parts In-Stock

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ComSIT Distribution GmbH

Germany . 41 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,105,670 parts In-Stock

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$0.009

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Semicontronic

India . 1,104,423 parts In-Stock

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Corphita

USA . 181 parts In-Stock

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Component Stockers USA

USA . 7,047,881 parts In-Stock

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7,047,881

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$0.010

Argo Parts USA

USA . 3,336 parts In-Stock

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$0.033

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$0.032

3,336

$0.033

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$0.032

Modulus Dynamics

Lithuania . 50 parts In-Stock

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$0.037

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$0.036

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$0.035

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50

$0.037

$0.036

$0.035

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Corohmni

South Africa . 363 parts In-Stock

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$1.029

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363

$1.029

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$1.476

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$1.343

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$1.210

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10

$1.476

$1.343

$1.210

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Aztec Data Supply Inc.

USA . 2,623 parts In-Stock

1+ parts

$1.881

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2,623

$1.881

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Continental Prestige Electronics

USA . 7,096,972 parts In-Stock

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$0.017

7,096,972

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$0.017

Eastek

USA . 6,410,000 parts In-Stock

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$0.014

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$0.014

GreenTree Electronics

Israel . 1,060,000 parts In-Stock

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1,060,000

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Perfect Parts

USA . 853,981 parts In-Stock

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Kepictronics

USA . 174,250 parts In-Stock

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RC Electronics

USA . 122,257 parts In-Stock

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Allen Electronics Distributors

USA . 25,300 parts In-Stock

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Glotronic Ltd.

UK . 24,000 parts In-Stock

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Lixinc

USA . 9,872 parts In-Stock

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SupplyDigital Components

Austria . 7,632 parts In-Stock

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TANS Electronics

Latvia . 4,461 parts In-Stock

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Kulean Microsystems

USA . 3,470 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,855 parts In-Stock

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2,855

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UHIMA Technologies

Türkiye . 824 parts In-Stock

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824

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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500

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Overview

Discover the BC847BLT3G by Onsemi, a small signal bipolar junction transistor that offers exceptional quality and performance. Manufactured by Onsemi, a trusted industry leader, this product delivers reliable and efficient operation for a wide range of applications. Whether you need precise control in audio amplifiers or dependable switching in power supplies, the BC847BLT3G has you covered. Its NPN configuration and maximum VCEsat of 0.6V ensure optimal performance, while its surface mount design and gull wing terminals make installation a breeze. With a minimum DC current gain of 200 and a maximum operating temperature of 150°C, this transistor guarantees superior results even in challenging conditions. Trust the BC847BLT3G to provide unbeatable value, benefits, and advantages for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it ideal for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications in electronics.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to incorporate the transistor into electronic devices.

Surface Mount: YES

The surface mount feature allows for easy and efficient PCB assembly, saving time and minimizing production costs.

Maximum VCEsat: 0.6 V

The low maximum VCEsat value reduces power consumption and heat dissipation, making the transistor energy-efficient.

Package Shape: RECTANGULAR

The rectangular shape provides a compact and space-saving design, ideal for applications where size is a constraint.

Terminal Form: GULL WING

The gull wing terminal form makes soldering and rework easier, ensuring a reliable connection in the circuit.

Maximum Power Dissipation (Abs): 0.3 W

The low maximum power dissipation allows for the transistor to operate efficiently without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 200

The high DC current gain ensures stable and reliable amplification performance in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows the transistor to operate reliably in harsh environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

The low collector-base capacitance minimizes signal distortion and improves high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage ensures the transistor can handle higher voltages without breakdown, increasing its versatility in different circuit applications.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making the transistor suitable for a wide range of applications in electronics.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows the transistor to operate reliably in cold environments, making it versatile for different use cases.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows the transistor to handle moderate current loads, making it suitable for various circuit applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides a durable and reliable solder connection, ensuring the transistor's long-term performance in electronic circuits.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and circuit design, accommodating different connection configurations for various applications.

Maximum Time At Peak Reflow Temperature (s): 40

The short maximum time at peak reflow temperature ensures efficient and reliable soldering during the manufacturing process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for reliable soldering and ensures proper bonding of the transistor to the PCB.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency enables the transistor to operate at high frequencies, making it suitable for high-speed switching and amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BLT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC847BLT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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