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SBC807-40LT1G

Onsemi

SBC807-40LT1G by Onsemi

SBC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. It has VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 30,000 parts In-Stock

1+ parts

$0.197

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

$0.028

30,000

$0.197

$0.076

$0.048

$0.028

Newark

USA . 11,230 parts In-Stock

1+ parts

$0.237

100+ parts

$0.088

1k+ parts

$0.056

10k+ parts

-

11,230

$0.237

$0.088

$0.056

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Chip1Stop

Japan . 36,000 parts In-Stock

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$0.031

36,000

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$0.031

Verical

USA . 30,000 parts In-Stock

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$0.048

10k+ parts

$0.028

30,000

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-

$0.048

$0.028

Rochester

USA . 27,426 parts In-Stock

1+ parts

-

100+ parts

$0.034

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$0.028

10k+ parts

$0.025

27,426

-

$0.034

$0.028

$0.025

Farnell

UK . 2,900 parts In-Stock

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-

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$0.061

10k+ parts

$0.051

2,900

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-

$0.061

$0.051

Distributors (In-Stock)

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Digiode

USA . 2,180 parts In-Stock

1+ parts

$0.027

100+ parts

-

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2,180

$0.027

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Nova Conductors

Japan . 550 parts In-Stock

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$0.054

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550

$0.054

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Bristol Electronics

USA . 4,695 parts In-Stock

1+ parts

$0.150

100+ parts

$0.075

1k+ parts

$0.030

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$0.022

4,695

$0.150

$0.075

$0.030

$0.022

IBS Electronics

USA . 969,000 parts In-Stock

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969,000

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NAC Semi

USA . 789,000 parts In-Stock

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$0.041

789,000

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$0.041

ComSIT Distribution GmbH

Germany . 112,970 parts In-Stock

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ComSIT USA

USA . 112,970 parts In-Stock

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Chip Stock

USA . 74,000 parts In-Stock

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Vyrian

USA . 18,601 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 18,000 parts In-Stock

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Dan-Mar Components

USA . 18,000 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 4,414 parts In-Stock

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Sensible Micro Corp

USA . 4,311 parts In-Stock

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4,311

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PC Components Company LLC

USA . 3,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,641 parts In-Stock

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Greenchips

USA . 2,564 parts In-Stock

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Microfarads

USA . 1,602 parts In-Stock

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J2 Sourcing AB

Sweden . 781 parts In-Stock

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781

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Distributors (Availability)

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Semicontronic

India . 19,861 parts In-Stock

1+ parts

$0.024

100+ parts

$0.023

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$0.023

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19,861

$0.024

$0.023

$0.023

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Corphita

USA . 2,293 parts In-Stock

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2,293

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Corohmni

South Africa . 80 parts In-Stock

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$0.028

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80

$0.028

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Ampacity Inc.

Singapore . 19,854 parts In-Stock

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$0.052

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19,854

$0.052

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Argo Parts USA

USA . 4,628 parts In-Stock

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$0.054

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$0.052

4,628

$0.054

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$0.052

Netroflash

USA . 500 parts In-Stock

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$0.054

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500

$0.054

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Modulus Dynamics

Lithuania . 50 parts In-Stock

1+ parts

$0.060

100+ parts

$0.059

1k+ parts

$0.057

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-

50

$0.060

$0.059

$0.057

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Continental Prestige Electronics

USA . 17,365 parts In-Stock

1+ parts

$0.270

100+ parts

$0.103

1k+ parts

$0.046

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$0.028

17,365

$0.270

$0.103

$0.046

$0.028

Aztec Data Supply Inc.

USA . 1,329 parts In-Stock

1+ parts

$1.235

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1,329

$1.235

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Advanced Electronics

New Zealand . 66 parts In-Stock

1+ parts

$1.275

100+ parts

$1.211

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$1.211

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66

$1.275

$1.211

$1.211

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Perfect Parts

USA . 6,642,556 parts In-Stock

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6,642,556

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Infinite Electronics LLP (Excess)

. 1,944,007 parts In-Stock

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1,944,007

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GreenTree Electronics

Israel . 768,000 parts In-Stock

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RC Electronics

USA . 138,740 parts In-Stock

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$0.060

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$0.050

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$0.050

138,740

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$0.060

$0.050

$0.050

Eastek

USA . 72,000 parts In-Stock

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Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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Glotronic Ltd.

UK . 26,400 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,674 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 18,383 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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Kulean Microsystems

USA . 7,572 parts In-Stock

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TANS Electronics

Latvia . 7,331 parts In-Stock

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7,331

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Problanco Electronics

Mexico . 4,365 parts In-Stock

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4,365

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Robosynatics

Brazil . 4,341 parts In-Stock

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$0.350

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$0.343

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$0.343

4,341

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$0.350

$0.343

$0.343

Lucentia Tech

USA . 4,341 parts In-Stock

1+ parts

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$0.350

1k+ parts

$0.343

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$0.343

4,341

-

$0.350

$0.343

$0.343

SupplyDigital Components

Austria . 2,640 parts In-Stock

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2,640

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Kepictronics

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 353 parts In-Stock

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353

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Overview

The SBC807-40LT1G by Onsemi is a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is ideal for switching applications and features a low VCEsat of 0.7V. With a compact package style and high DC current gain, this transistor is perfect for a wide range of electronic projects. Trust Onsemi's reputation for excellence and choose the SBC807-40LT1G for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and reliability to the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for switching purposes.

Configuration: SINGLE

The single configuration simplifies circuit design and integration of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards.

Maximum VCEsat: 0.7 V

Low VCEsat value indicates minimal saturation voltage, optimizing efficiency of the transistor.

Package Shape: RECTANGULAR

Rectangular shape enhances the ease of placement and mounting of the transistor in a circuit.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and ease of soldering during assembly.

No. of Terminals: 3

With 3 terminals, this transistor simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 0.3 W

The low power dissipation ensures the transistor operates efficiently and without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, ideal for compact designs.

Minimum DC Current Gain (hFE): 250

The high DC current gain ensures amplification of input signals with minimal distortion.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

The high maximum voltage rating ensures the transistor can handle higher voltages without damage.

Transistor Element Material: SILICON

Silicon material provides high electrical conductivity and stability, enhancing the performance of the transistor.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature enables the transistor to function in extreme cold conditions.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating allows for handling higher current flows with efficiency.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides corrosion resistance and reliable electrical connections for long-term use.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layouts and connections.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency indicates fast response and switching capabilities of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC807-40LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

SBC807-40LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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