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SBC847CDW1T1G

Onsemi

SBC847CDW1T1G by Onsemi

SBC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.38W, hFE of 420, and Vce of 45V. With a package style of small outline and surface mount capability, it operates b/w -55 to 150°C.

Median Price

$0.059

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Arrow

USA . 12,000 parts In-Stock

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Verical

USA . 12,000 parts In-Stock

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Chip1Stop

Japan . 26 parts In-Stock

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$0.059

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$0.059

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Digiode

USA . 664 parts In-Stock

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$0.123

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664

$0.123

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TME

Poland . 1,357 parts In-Stock

1+ parts

$0.210

100+ parts

$0.077

1k+ parts

$0.049

10k+ parts

$0.038

1,357

$0.210

$0.077

$0.049

$0.038

Nova Conductors

Japan . 10 parts In-Stock

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$0.243

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10

$0.243

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Flip Electronics

USA . 255,000 parts In-Stock

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Chip Stock

USA . 159,500 parts In-Stock

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ComSIT Distribution GmbH

Germany . 60,000 parts In-Stock

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ComSIT USA

USA . 60,000 parts In-Stock

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Vyrian

USA . 32,714 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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$0.120

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$0.120

LIBRA Elektronik GmbH

Germany . 6,963 parts In-Stock

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Elcom Components

USA . 2,994 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,380 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 28,873 parts In-Stock

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$0.050

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$0.049

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$0.048

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28,873

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$0.049

$0.048

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Ampacity Inc.

Singapore . 27,432 parts In-Stock

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$0.050

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27,432

$0.050

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Modulus Dynamics

Lithuania . 80 parts In-Stock

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$0.051

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$0.050

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$0.049

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80

$0.051

$0.050

$0.049

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Continental Prestige Electronics

USA . 1,689 parts In-Stock

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$0.051

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$0.050

1,689

$0.051

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$0.050

Argo Parts USA

USA . 583 parts In-Stock

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$0.051

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$0.049

583

$0.051

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$0.049

Corohmni

South Africa . 147 parts In-Stock

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$0.059

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147

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Corphita

USA . 1,863 parts In-Stock

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$0.116

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1,863

$0.116

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$0.376

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$0.357

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$0.357

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300

$0.376

$0.357

$0.357

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Aztec Data Supply Inc.

USA . 98 parts In-Stock

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$1.060

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Kepictronics

USA . 15,000 parts In-Stock

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Kulean Microsystems

USA . 6,569 parts In-Stock

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TANS Electronics

Latvia . 4,575 parts In-Stock

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Problanco Electronics

Mexico . 4,109 parts In-Stock

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Eastek

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Bastille Electronics

Australia . 2,653 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 960 parts In-Stock

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Perfect Parts

USA . 784 parts In-Stock

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784

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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SupplyDigital Components

Austria . 249 parts In-Stock

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Lixinc

USA . 153 parts In-Stock

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Overview

Unleash the power of innovation with the SBC847CDW1T1G by Onsemi, a top-tier manufacturer known for its high-quality Small Signal Bipolar Junction Transistors. Ideal for amplifier applications, this NPN transistor offers exceptional performance and reliability. With a maximum power dissipation of 0.38W and a minimum DC current gain of 420, this transistor ensures optimal functionality in any project. Whether you're a seasoned professional or a DIY enthusiast, this versatile component is a game-changer. Elevate your projects to new heights with the SBC847CDW1T1G - where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor components, making it a durable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Two separate elements allow for more flexibility and control in circuit design, making this transistor a versatile option.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount compatibility makes installation and assembly easier, especially in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into circuit boards, enhancing the product's usability.

Terminal Form: GULL WING

Gull wing terminals provide a secure and reliable connection, reducing the risk of signal interference or loss.

No. of Elements: 2

Having two elements allows for more precise control and customization in circuit design, enhancing performance and versatility.

No. of Terminals: 6

Six terminals offer greater connectivity options and flexibility in circuit configurations, making this transistor a versatile choice.

Maximum Power Dissipation (Abs): 0.38 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, ensuring reliability in demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes it suitable for compact devices or applications where space is limited.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures efficient signal amplification and overall performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand extreme conditions and ensure reliable performance in various environments.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating makes this transistor suitable for applications where high voltage is present.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in semiconductor devices, making this transistor a durable and long-lasting choice.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the transistor to function effectively in cold environments without compromising performance.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows the transistor to handle large currents, making it suitable for power amplification applications.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability and ensures stable connections, enhancing the reliability of the product.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and installation, making it easier to incorporate the transistor into various applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a short time at peak reflow temperature, the transistor can withstand the reflow soldering process without damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures the transistor can withstand the soldering process without losing its properties or functionality.

Reference Standard: AEC-Q101

AEC-Q101 compliance ensures that the transistor meets automotive quality standards, making it suitable for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows the transistor to amplify signals with high frequencies, making it a suitable choice for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC847CDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBC847CDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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