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SBC846BLT1G

Onsemi

SBC846BLT1G by Onsemi

SBC846BLT1G by Onsemi is a NPN BJT transistor with max VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and max operating temp of 150°C.

Median Price

$0.065

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 10,323 parts In-Stock

1+ parts

$0.166

100+ parts

$0.067

1k+ parts

$0.044

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10,323

$0.166

$0.067

$0.044

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DigiKey

USA . 664,283 parts In-Stock

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$0.170

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$0.065

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$0.041

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$0.028

664,283

$0.170

$0.065

$0.041

$0.028

Mouser Electronics

USA . 185,724 parts In-Stock

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$0.170

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$0.065

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$0.042

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185,724

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$0.065

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$0.028

Flip Electronics (Authorized)

USA . 672,000 parts In-Stock

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Rochester

USA . 450,900 parts In-Stock

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Avnet

USA . 213,000 parts In-Stock

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Arrow

USA . 138,000 parts In-Stock

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Chip1Stop

Japan . 138,000 parts In-Stock

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Verical

USA . 138,000 parts In-Stock

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Element14

Singapore . 10,323 parts In-Stock

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$0.104

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$0.066

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$0.065

10,323

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$0.065

Farnell

UK . 2,988 parts In-Stock

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$0.065

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$0.041

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$0.036

2,988

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Distributors (In-Stock)

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Digiode

USA . 821 parts In-Stock

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$0.024

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TME

Poland . 3,900 parts In-Stock

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$0.080

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$0.035

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$0.020

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$0.016

3,900

$0.080

$0.035

$0.020

$0.016

Bristol Electronics

USA . 11,686 parts In-Stock

1+ parts

$0.135

100+ parts

$0.068

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$0.027

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$0.017

11,686

$0.135

$0.068

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$0.017

Nova Conductors

Japan . 10 parts In-Stock

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Dan-Mar Components

USA . 649,400 parts In-Stock

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Cyclops Electronics Ltd

UK . 236,383 parts In-Stock

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Chip Stock

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Vyrian

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NAC Semi

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ComSIT Distribution GmbH

Germany . 56,990 parts In-Stock

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ComSIT USA

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Electro Sonic

Canada . 42,000 parts In-Stock

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Sensible Micro Corp

USA . 7,437 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Prism Electronics

USA . 147 parts In-Stock

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Martec Srl

Italy . 50 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 169,157 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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Corphita

USA . 110 parts In-Stock

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Ampacity Inc.

Singapore . 167,358 parts In-Stock

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Argo Parts USA

USA . 1,144 parts In-Stock

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$0.058

1,144

$0.060

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$0.058

Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.064

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$0.061

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$0.061

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1,000

$0.064

$0.061

$0.061

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Modulus Dynamics

Lithuania . 600 parts In-Stock

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$0.067

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$0.066

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$0.064

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600

$0.067

$0.066

$0.064

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Bastille Electronics

Australia . 10 parts In-Stock

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$0.265

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$0.252

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$0.239

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$0.236

10

$0.265

$0.252

$0.239

$0.236

Aztec Data Supply Inc.

USA . 221 parts In-Stock

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$1.178

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Perfect Parts

USA . 23,341,983 parts In-Stock

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Eastek

USA . 2,001,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Epart123

USA . 600,000 parts In-Stock

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Component Connect

USA . 587,140 parts In-Stock

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Continental Prestige Electronics

USA . 396,000 parts In-Stock

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Kepictronics

USA . 306,000 parts In-Stock

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ChipstoGo Electronic ltd

UK . 231,000 parts In-Stock

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RC Electronics

USA . 144,679 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,347 parts In-Stock

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Robosynatics

Brazil . 10,946 parts In-Stock

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$0.061

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Lucentia Tech

USA . 10,946 parts In-Stock

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$0.061

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$0.060

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SupplyDigital Components

Austria . 6,530 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,443 parts In-Stock

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Lixinc

USA . 1,889 parts In-Stock

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Problanco Electronics

Mexico . 1,632 parts In-Stock

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TANS Electronics

Latvia . 1,288 parts In-Stock

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UHIMA Technologies

Türkiye . 835 parts In-Stock

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835

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Overview

Enhance your electronic designs with the SBC846BLT1G by Onsemi, a top-quality small signal bipolar junction transistor (BJT) that offers superior performance and reliability. Manufactured by Onsemi, this NPN transistor is ideal for a wide range of applications, from amplifiers to switching circuits. With a maximum VCEsat of only 0.6V and a minimum DC current gain of 200, this transistor provides exceptional value and efficiency. Whether you're a seasoned engineer or a hobbyist looking to level up your projects, the SBC846BLT1G is the perfect choice for your next design challenge.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration, ideal for compact electronic devices.

Surface Mount: YES

Enables easy and efficient PCB assembly, reducing manufacturing time and costs.

Maximum VCEsat: 0.6 V

Low VCEsat ensures efficient operation and minimal power loss in the transistor.

Package Shape: RECTANGULAR

Provides easy integration into PCB layouts, optimizing space utilization.

Terminal Form: GULL WING

Facilitates secure soldering and reliable connections during PCB assembly.

No. of Terminals: 3

Simplified pin configuration for ease of circuit connection and integration.

Maximum Power Dissipation (Abs): 0.3 W

Ability to handle moderate power levels, suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Compact package size ideal for space-constrained applications and portable devices.

Minimum DC Current Gain (hFE): 200

High DC current gain allows for amplification of weak signals with minimal input current.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliability and stability in various environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion and interference in high-frequency applications.

Maximum Collector-Emitter Voltage: 65 V

Voltage handling capability suitable for a wide range of electronic circuits and applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and compatibility with modern electronic systems.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme conditions, ideal for industrial and automotive applications.

Maximum Collector Current (IC): 0.1 A

Moderate collector current rating suitable for low to medium current applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish ensures reliable solderability and long-term stability of terminal connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and connections, accommodating various circuit designs.

Reference Standard: AEC-Q101

Compliance with automotive industry standards ensures high quality and reliability for automotive electronic applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables efficient amplification and switching of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC846BLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

SBC846BLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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