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2N6517BU

Onsemi

2N6517BU by Onsemi

2N6517BU by Onsemi is a NPN BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring small signal amplification due to its high transition frequency of 40MHz and max. power dissipation of 0.625W in a cylindrical package style.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

1+ parts

$0.095

100+ parts

$0.090

1k+ parts

$0.090

10k+ parts

-

60

$0.095

$0.090

$0.090

-

DigiKey

USA . 2,554 parts In-Stock

1+ parts

$0.370

100+ parts

$0.142

1k+ parts

$0.094

10k+ parts

$0.084

2,554

$0.370

$0.142

$0.094

$0.084

Mouser Electronics

USA . 12,140 parts In-Stock

1+ parts

$0.390

100+ parts

$0.116

1k+ parts

$0.072

10k+ parts

$0.059

12,140

$0.390

$0.116

$0.072

$0.059

Rochester

USA . 82,138 parts In-Stock

1+ parts

-

100+ parts

$0.081

1k+ parts

$0.067

10k+ parts

$0.060

82,138

-

$0.081

$0.067

$0.060

Flip Electronics (Authorized)

USA . 40,000 parts In-Stock

1+ parts

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40,000

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Verical

USA . 8,974 parts In-Stock

1+ parts

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$0.075

8,974

-

-

-

$0.075

Element14

Singapore . 3,137 parts In-Stock

1+ parts

-

100+ parts

$0.196

1k+ parts

$0.113

10k+ parts

$0.098

3,137

-

$0.196

$0.113

$0.098

Farnell

UK . 2,579 parts In-Stock

1+ parts

-

100+ parts

$0.101

1k+ parts

$0.066

10k+ parts

-

2,579

-

$0.101

$0.066

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Chip1Stop

Japan . 150 parts In-Stock

1+ parts

-

100+ parts

$0.082

1k+ parts

-

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150

-

$0.082

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,527 parts In-Stock

1+ parts

$0.066

100+ parts

-

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2,527

$0.066

-

-

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.102

100+ parts

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150

$0.102

-

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Chip Stock

USA . 80,000 parts In-Stock

1+ parts

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80,000

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Flip Electronics

USA . 40,000 parts In-Stock

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Vyrian

USA . 17,100 parts In-Stock

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17,100

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TME

Poland . 3,720 parts In-Stock

1+ parts

-

100+ parts

$0.059

1k+ parts

$0.057

10k+ parts

$0.054

3,720

-

$0.059

$0.057

$0.054

Ashlea Components Ltd

UK . 999 parts In-Stock

1+ parts

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999

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VNN

France . 285 parts In-Stock

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285

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Prism Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 16,976 parts In-Stock

1+ parts

$0.060

100+ parts

-

1k+ parts

-

10k+ parts

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16,976

$0.060

-

-

-

Semicontronic

India . 16,788 parts In-Stock

1+ parts

$0.060

100+ parts

$0.058

1k+ parts

$0.058

10k+ parts

-

16,788

$0.060

$0.058

$0.058

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Corphita

USA . 3,094 parts In-Stock

1+ parts

$0.063

100+ parts

-

1k+ parts

-

10k+ parts

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3,094

$0.063

-

-

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Component Stockers USA

USA . 77,482 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

$0.050

77,482

$0.070

$0.070

$0.060

$0.050

Corohmni

South Africa . 295 parts In-Stock

1+ parts

$0.070

100+ parts

-

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-

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295

$0.070

-

-

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.095

100+ parts

$0.090

1k+ parts

$0.090

10k+ parts

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60

$0.095

$0.090

$0.090

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Argo Parts USA

USA . 686 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

$0.094

686

$0.097

-

-

$0.094

Modulus Dynamics

Lithuania . 78 parts In-Stock

1+ parts

$0.112

100+ parts

$0.111

1k+ parts

$0.108

10k+ parts

-

78

$0.112

$0.111

$0.108

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Continental Prestige Electronics

USA . 4,882 parts In-Stock

1+ parts

$0.445

100+ parts

$0.162

1k+ parts

$0.074

10k+ parts

$0.059

4,882

$0.445

$0.162

$0.074

$0.059

Aztec Data Supply Inc.

USA . 800 parts In-Stock

1+ parts

$0.749

100+ parts

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800

$0.749

-

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Microchip USA

USA . 2,795 parts In-Stock

1+ parts

$2.600

100+ parts

$2.580

1k+ parts

$2.580

10k+ parts

$2.570

2,795

$2.600

$2.580

$2.580

$2.570

Perfect Parts

USA . 14,628 parts In-Stock

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14,628

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Infinite Electronics LLP (Excess)

. 10,003 parts In-Stock

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Kulean Microsystems

USA . 6,890 parts In-Stock

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6,890

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Metaverse IC Inc.

Canada . 6,831 parts In-Stock

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6,831

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Problanco Electronics

Mexico . 2,827 parts In-Stock

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2,827

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TANS Electronics

Latvia . 2,162 parts In-Stock

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2,162

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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SupplyDigital Components

Austria . 1,791 parts In-Stock

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1,791

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Supply Digital

USA . 742 parts In-Stock

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742

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UHIMA Technologies

Türkiye . 510 parts In-Stock

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510

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Netroflash

USA . 500 parts In-Stock

1+ parts

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$0.100

1k+ parts

$0.097

10k+ parts

$0.095

500

-

$0.100

$0.097

$0.095

Robosynatics

Brazil . 473 parts In-Stock

1+ parts

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100+ parts

$0.724

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$0.724

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$0.724

473

-

$0.724

$0.724

$0.724

Lucentia Tech

USA . 473 parts In-Stock

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$0.724

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$0.724

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$0.724

473

-

$0.724

$0.724

$0.724

Overview

Discover the power of the 2N6517BU Small Signal Bipolar Junction Transistor by Onsemi, a leading manufacturer in the industry. This NPN transistor offers reliability, efficiency, and versatility for a wide range of applications. With a maximum collector-emitter voltage of 350V and a nominal transition frequency of 40MHz, this transistor is a powerhouse in a compact cylindrical package. Whether you're working on amplifiers, switches, or oscillators, the 2N6517BU delivers exceptional performance and value. Upgrade your electronics with Onsemi's trusted quality and precision engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, enhancing product durability.

Polarity or Channel Type: NPN

Commonly used and widely compatible with many circuits and applications.

Configuration: SINGLE

Simplifies circuit design and installation.

Package Shape: ROUND

Facilitates efficient heat dissipation and component placement.

Terminal Form: THROUGH-HOLE

Allows for easy through-hole soldering and secure connection.

Maximum Power Dissipation (Abs): 0.625 W

Suitable for various low-power applications without risking overheating.

Package Style (Meter): CYLINDRICAL

Compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 15

Provides stable and consistent amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 350 V

Allows for handling higher voltage levels in circuits.

Transistor Element Material: SILICON

Offers good electrical properties and reliability.

Maximum Collector Current (IC): 0.5 A

Sufficient current handling capacity for many low-power applications.

Terminal Finish: TIN

Provides good solderability and corrosion resistance.

Terminal Position: BOTTOM

Facilitates easy mounting and connection in various circuit layouts.

Nominal Transition Frequency (fT): 40 MHz

Allows for high-frequency operation in signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6517BU attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6517BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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