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2N6520T&A

Continental Device India

2N6520T&A by Continental Device India

2N6520T&A by Continental Device India is a PNP BJT with max. power dissipation of 0.625W, hFE of 15, and VCE of 350V. Ideal for applications requiring a single configuration transistor in through-hole package style with fT of 40MHz.

Median Price

$0.081

Lifecycle Status

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Nova Conductors

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Argo Parts USA

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Netroflash

USA . 500 parts In-Stock

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AZTECH Wire

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Overview

Unlock the power of reliable and high-quality electronic components with the 2N6520T&A by Continental Device India. This Small Signal Bipolar Junction Transistor (BJT) offers unmatched performance and durability, making it a versatile choice for a wide range of applications. From amplifiers to signal processing circuits, this PNP transistor delivers superior efficiency and precision. Trust in Continental Device India's expertise and innovation to elevate your projects to new heights. Experience the value and benefits of our products firsthand with the 2N6520T&A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits that require PNP transistors, providing versatility in design.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels, making it suitable for a range of applications.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C allows for reliable performance in high-temperature environments, ensuring stability in operation.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage of 350 V provides flexibility in circuit design, allowing for applications with higher voltage requirements.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40 MHz indicates fast response times and high-frequency operation, making it ideal for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6520T&A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3.5 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6520T&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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