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2N6515RLRM

Onsemi

2N6515RLRM by Onsemi

2N6515RLRM by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 250V, ideal for switching applications. It has a min. DC current gain of 25 and max. operating temp. of 150 °C, making it suitable for low-power circuits requiring fast switching speeds up to 40MHz. The package style is cylindrical with through-hole terminals and peak reflow temp. of 235°C, ensuring reliable performance in various electronic designs.

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Northwest PG Solutions

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

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Kulean Microsystems

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Corphita

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Overview

Unleash the power of innovation with the 2N6515RLRM by Onsemi, a top-quality small signal bipolar junction transistor that is perfect for switching applications. Manufactured by Onsemi, a leader in the industry known for their exceptional quality and reliability, this NPN transistor offers customers unbeatable value and benefits. With a maximum collector-emitter voltage of 250V and a peak transition frequency of 40MHz, this transistor is designed to deliver outstanding performance and efficiency. Upgrade your projects with the 2N6515RLRM and experience the difference that Onsemi's advanced technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN type transistors are commonly used and versatile for various electronic applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into a system.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for use in digital circuits.

Package Shape: ROUND

Round shape allows for easy mounting and connection in circular layouts or designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make soldering easier during assembly.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels efficiently.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compactness and ease of handling for various applications.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain of 25 ensures reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 250 V

High collector-emitter voltage rating of 250V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor element.

Maximum Turn On Time (ton): 200 ns

Fast turn on time of 200ns ensures quick response and operation in switching applications.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5A allows for handling moderate current levels efficiently.

Maximum Turn Off Time (toff): 3500 ns

Long turn off time of 3500ns minimizes switching noise and ensures smooth operation during switching transitions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering during assembly.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper soldering and assembly during manufacturing.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40MHz, this transistor can handle high-frequency signals with ease.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6515RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3500 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6515RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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