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2N6517TA

Onsemi

2N6517TA by Onsemi

2N6517TA by Onsemi is a NPN BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring small signal amplification due to its high transition frequency of 40MHz and max. power dissipation of 0.625W.

Median Price

$0.153

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14,000 parts In-Stock

1+ parts

$0.343

100+ parts

$0.133

1k+ parts

$0.072

10k+ parts

$0.053

14,000

$0.343

$0.133

$0.072

$0.053

Newark

USA . 6,019 parts In-Stock

1+ parts

$0.357

100+ parts

$0.149

1k+ parts

$0.101

10k+ parts

-

6,019

$0.357

$0.149

$0.101

-

DigiKey

USA . 12,196 parts In-Stock

1+ parts

$0.360

100+ parts

$0.140

1k+ parts

$0.092

10k+ parts

-

12,196

$0.360

$0.140

$0.092

-

Mouser Electronics

USA . 7,618 parts In-Stock

1+ parts

$0.360

100+ parts

$0.140

1k+ parts

$0.092

10k+ parts

$0.073

7,618

$0.360

$0.140

$0.092

$0.073

Verical

USA . 14,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.072

10k+ parts

$0.053

14,000

-

-

$0.072

$0.053

Master Electronics

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

8,000

-

-

-

$0.041

Farnell

UK . 4,664 parts In-Stock

1+ parts

-

100+ parts

$0.114

1k+ parts

$0.072

10k+ parts

$0.049

4,664

-

$0.114

$0.072

$0.049

Element14

Singapore . 4,664 parts In-Stock

1+ parts

-

100+ parts

$0.192

1k+ parts

$0.084

10k+ parts

$0.083

4,664

-

$0.192

$0.084

$0.083

Avnet

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

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Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.051

10k+ parts

$0.045

2,500

-

$0.061

$0.051

$0.045

Flip Electronics (Authorized)

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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500

-

-

-

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Chip1Stop

Japan . 346 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.053

10k+ parts

-

346

-

$0.092

$0.053

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,642 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

2,642

$0.048

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

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500

$0.108

-

-

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TME

Poland . 2,065 parts In-Stock

1+ parts

$0.340

100+ parts

$0.137

1k+ parts

$0.082

10k+ parts

$0.062

2,065

$0.340

$0.137

$0.082

$0.062

Chip Stock

USA . 67,000 parts In-Stock

1+ parts

-

100+ parts

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67,000

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NAC Semi

USA . 56,000 parts In-Stock

1+ parts

-

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$0.124

56,000

-

-

-

$0.124

IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

10,000

-

-

-

$0.057

ComSIT Distribution GmbH

Germany . 7,500 parts In-Stock

1+ parts

-

100+ parts

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7,500

-

-

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Vyrian

USA . 6,483 parts In-Stock

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6,483

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ACDS - Activité Composants Distribution Service

France . 3,990 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,990

-

-

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Speed Components Ltd

Israel . 2,480 parts In-Stock

1+ parts

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2,480

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Flip Electronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

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500

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 445 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

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445

$0.045

-

-

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Corohmni

South Africa . 302 parts In-Stock

1+ parts

$0.049

100+ parts

-

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302

$0.049

-

-

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Component Stockers USA

USA . 53,739 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.040

10k+ parts

$0.050

53,739

$0.050

$0.050

$0.040

$0.050

Ampacity Inc.

Singapore . 5,907 parts In-Stock

1+ parts

$0.091

100+ parts

-

1k+ parts

-

10k+ parts

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5,907

$0.091

-

-

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Argo Parts USA

USA . 3,766 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

$0.105

3,766

$0.108

-

-

$0.105

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.108

100+ parts

$0.106

1k+ parts

-

10k+ parts

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1,000

$0.108

$0.106

-

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Continental Prestige Electronics

USA . 8,137 parts In-Stock

1+ parts

$0.281

100+ parts

$0.078

1k+ parts

$0.047

10k+ parts

-

8,137

$0.281

$0.078

$0.047

-

Andel Nordic

Denmark . 68 parts In-Stock

1+ parts

$31.710

100+ parts

-

1k+ parts

$22.199

10k+ parts

$22.199

68

$31.710

-

$22.199

$22.199

Perfect Parts

USA . 18,020 parts In-Stock

1+ parts

-

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18,020

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Eastek

USA . 16,000 parts In-Stock

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16,000

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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Kulean Microsystems

USA . 7,874 parts In-Stock

1+ parts

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7,874

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-

-

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SupplyDigital Components

Austria . 6,630 parts In-Stock

1+ parts

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100+ parts

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6,630

-

-

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TANS Electronics

Latvia . 4,428 parts In-Stock

1+ parts

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4,428

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GreenTree Electronics

Israel . 4,000 parts In-Stock

1+ parts

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4,000

-

-

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Cyclops Electronics Ltd (Excess)

UK . 3,990 parts In-Stock

1+ parts

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100+ parts

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3,990

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-

-

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Glotronic Ltd.

UK . 3,192 parts In-Stock

1+ parts

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3,192

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Supply Digital

USA . 2,813 parts In-Stock

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2,813

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Problanco Electronics

Mexico . 2,042 parts In-Stock

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2,042

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Assy Fe

Spain . 1,780 parts In-Stock

1+ parts

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1,780

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UHIMA Technologies

Türkiye . 360 parts In-Stock

1+ parts

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360

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Overview

Enhance your electronic projects with the 2N6517TA by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees reliability and performance. Manufactured by Onsemi, a renowned name in the industry, this NPN transistor offers countless applications in amplification and switching circuits. With a maximum collector-emitter voltage of 350V and a transition frequency of 40MHz, this transistor ensures efficient power dissipation (0.625W) and a minimum DC current gain of 15 for optimal functionality. Trust Onsemi for top-notch quality and choose the 2N6517TA for unmatched value and benefits in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight package, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic projects.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections for reliable performance in circuit applications.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation capability ensures the transistor can handle demanding tasks without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers mechanical strength and stability for effective circuit integration.

Minimum DC Current Gain (hFE): 15

A higher DC current gain ensures efficient amplification of signals in electronic circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for the transistor to be used in various environmental conditions.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating provides reliability and safety in high-voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for long-lasting operation in circuits.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for the transistor to handle larger loads with ease.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and electrical conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and connect the transistor in circuit layouts.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6517TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6517TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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