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2N6515RL

Onsemi

2N6515RL by Onsemi

The Onsemi 2N6515RL is a NPN BJT transistor with max. Vce of 250V, Ic of 0.5A, and hFE of 25. Ideal for switching applications due to its fast ton of 200ns and toff of 3.5ns at an operating temp. up to 150 °C. Its fT is rated at 40MHz making it suitable for high-frequency operations in various electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,022 parts In-Stock

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Vyrian

USA . 1,069 parts In-Stock

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Native Components

USA . 614 parts In-Stock

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$101.652

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$97.586

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Northwest PG Solutions

USA . 633 parts In-Stock

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$111.817

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TANS Electronics

Latvia . 7,436 parts In-Stock

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Problanco Electronics

Mexico . 6,161 parts In-Stock

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SupplyDigital Components

Austria . 2,708 parts In-Stock

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Kulean Microsystems

USA . 2,291 parts In-Stock

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Corphita

USA . 867 parts In-Stock

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Corohmni

South Africa . 269 parts In-Stock

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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Overview

Enhance your electronic projects with the 2N6515RL by Onsemi, a high-quality NPN transistor perfect for switching applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this small signal bipolar junction transistor offers reliable performance and durability. Whether you're designing amplifiers, oscillators, or signal processing circuits, the 2N6515RL delivers exceptional value and benefits to customers seeking precision and efficiency in their projects. Upgrade your electronics with the 2N6515RL and experience the advantages of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longer lifespan and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used and compatible with many electronic circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Package Shape: ROUND

Allows for easy mounting and integration in circular or cylindrical designs.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and installation on PCBs or breadboards.

No. of Terminals: 3

Simple and straightforward connection, minimizing complexity in circuit layout.

Package Style (Meter): CYLINDRICAL

Compact and space-saving design, suitable for applications with limited space.

Minimum DC Current Gain (hFE): 25

Ensures stable and consistent amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures, suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 250 V

Provides high voltage capability, suitable for applications requiring higher voltage handling.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Turn On Time (ton): 200 ns

Fast turn-on time allows for quick switching operations in the circuit.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, suitable for various switching applications.

Maximum Turn Off Time (toff): 3.5 ns

Fast turn-off time minimizes switching losses and improves efficiency.

Terminal Finish: TIN LEAD

Provides a reliable electrical connection and prevents oxidation of terminals.

Terminal Position: BOTTOM

Facilitates easy mounting and connection in circuit designs.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast signal processing and switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6515RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3.5 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6515RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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